(54) LAYERED-FILAMENT LATTICE FOR
CHEMICAL MECHANICAL POLISHING
(75) Inventor: Gregory P. Muldowney, Earleville, MD (US)
(73) Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark, DE (US)
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.
(21) Appl.No.: 11/893,495
(22) Filed: Aug. 16, 2007
(65) Prior Publication Data
US 2009/0047877 Al Feb. 19, 2009
(51) Int. CI.
B24D 11/00 (2006.01)
(52) U.S. CI 451/527; 451/529; 451/532;
451/536
(58) Field of Classification Search 451/285,
451/287, 526, 527, 529, 532, 531, 533, 536 See application file for complete search history.
(56) References Cited
U.S. PATENT DOCUMENTS
2,740,239 A * 4/1956 Balletal 451/536
2,984,052 A * 5/1961 Mueller, Jr 451/536
3,861,892 A * 1/1975 Wisdom etal 51/295
4,282,011 A * 8/1981 Terpay 51/298
5,131,924 A * 7/1992 Wiand 51/293
The polishing pad (104) is useful for polishing at least one of a magnetic, optical and semiconductor substrate (112) in the presence of a polishing medium (120). The polishing pad 104 includes multiple layers of polishing filaments (200, 300, 400,500) stacked on a base layer (204,404, 504) of polishing filaments, the multiple layers of polishing filaments (200, 300, 400, 500) having a sequential stacked formation with each layer of the polishing filaments being above and attached to a lower polishing filament, the multiple layers of polishing filaments (200, 300, 400, 500) being parallel to a polishing surface of the polishing pad (104) and wherein individual polishing filaments (202, 302, 402) of the multiple layers of polishing filaments (200,300,400,500) are above an average of at least three polishing filaments (202, 302, 402), to form the polishing pad having an open lattice structure of interconnected polishing filaments (210, 310, 410, 510, 610).
10 Claims, 8 Drawing Sheets
