Semiconductor light emitting diode producing visible light

[54] SEMICONDUCTOR LIGHT EMITTING DIODE PRODUCING VISIBLE LIGHT

[75] Inventors: Tatsuya Kimura; Zempei Kawazu, both of Tokyo, Japan

[73] Assignee: Mitsubishi Denki Kabushiki Kaisha. Tokyo, Japan

[21] Appl. No.: 547,315

[22] Filed: Oct 24, 1995

[30] Foreign Application Priority Data

Oct. 24,1994 [JP] Japan 6-258365

[51] Int. CI.6 H01L 33/00

[52] U.S. CI 257/89; 257/90; 257/94;

257/103

[58] Field of Search 257/89, 90, 94,

257/96. 97. 102, 103

[56] References Cited

U.S. PATENT DOCUMENTS 5,138,416 8/1992 Brillson .

5,459,337 10/1995 Itoetal 257/89

5,583,351 12/1996 Brown et al 257/89

FOREIGN PATENT DOCUMENTS

2283079 11/1990 Japan .

OTHER PUBLICATIONS

Ikegami et al, "Electrical Characteristics Of Low Temperature Directly Bonded GaAs/InP Heterojunctions", Gallium Arsenide and Related Compounds 1992. pp. 947-948.

Tokutome et al, "High Quality MOW Structure On Si By Direct Bonding Method". Extended Abstract 28a-ZB-10 of The Japan Society of Applied Physics, 1994.

Okuno et al. "X-ray Diffraction Measurement On InP/ InGaAsP Layer Directly Bonded On GaAs Substrate". Extended Abstract 31a-X-10 of The Japan Society of Applied Physics, 1994.

Primary Examiner—Ngan V. Ng6

Attorney, Agent, or Firm—Leydig. Voit & Mayer, Ltd.

[57] ABSTRACT

A method of fabricating a light emitting diode (LED) device producing visible light includes growing layers of an LED emitting blue light to form a blue LED; growing layers of an LED emitting green light to form a green LED; growing layers of an LED emitting red light to form a red LED; and uniting the three LEDs directly to each other by annealing. Therefore, an LED device that can emit light of all three colors from the same region of the LED device with variable light intensity is obtained.

25 Claims, 9 Drawing Sheets