A fabrication method for providing isolation between adjacent regions of an integrated circuit includes providing a guard layer over field edges that are the interfaces between field oxide regions and diffusion regions in which dopant is introduced. The guard layer will inhibit introduction of dopant...http://www.google.se/patents/US6417074?utm_source=gb-gplus-sharePatent US6417074 - Method of manufacturing a structure for reducing leakage currents by providing isolation between adjacent regions of an integrated circuit
