An anisotropic wet etch of a semiconductor layer generates facets joined by a ridge running along the center of a pattern in a dielectric hardmask layer on the semiconductor layer. The dielectric hardmask layer is removed and a conformal masking material layer is deposited. Angled ion implantation of...http://www.google.se/patents/US7863169?utm_source=gb-gplus-sharePatent US7863169 - Lithography for printing constant line width features
