A self-aligned fully-walled monocrystalline silicon emitter-base structure for a bipolar transistor and methods for producing the structure are provided. The methods involve creating an oxide side wall surrounding a monocrystalline silicon emitter-base structure by first defining the emitter region in...http://www.google.se/patents/US5306649?utm_source=gb-gplus-sharePatent US5306649 - Method for producing a fully walled emitter-base structure in a bipolar transistor
