TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating...http://www.google.se/patents/US5294811?utm_source=gb-gplus-sharePatent US5294811 - Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device
