An epitaxial reactor for processing a plurality of semiconductor material wafers by exposing them to a reactive gaseous flow is provided with a support of the planetary type. The vessel in which the reactive gasses are in contact with the wafers (1) is constituted by a cylindrical member (19) having...http://www.google.se/patents/US4961399?utm_source=gb-gplus-sharePatent US4961399 - Epitaxial growth reactor provided with a planetary support
