The field effect transistor comprises a source and a drain connected by a channel controlled by a gate electrode separated from the channel by a gate insulator. The channel is formed by a diamond-like carbon layer. The method for making the transistor successively comprises deposition of a diamond-like...http://www.google.se/patents/US7553693?utm_source=gb-gplus-sharePatent US7553693 - Method for making a field effect transistor with diamond-like carbon channel and resulting transistor
