Disclosed are embodiments of a field effect transistor (FET) and, more particularly, a fully-depleted, thin-body (FDTB) FET that allows for scaling with minimal short channel effects, such as drain induced barrier lowering (DIBL) and saturation threshold voltage (Vtsat) roll-off, at shorter channel lengths....http://www.google.se/patents/US7943997?utm_source=gb-gplus-sharePatent US7943997 - Fully-depleted low-body doping field effect transistor (FET) with reverse short channel effects (SCE) induced by self-aligned edge back-gate(s)
