There is provided is a semiconductor storage device that can reduce a dispersion in characteristics such as a threshold voltage and a writing performance and has a low consumption power and a non-volatility. There are included a source region 9 and a drain region 10 formed on a silicon substrate 1, a...http://www.google.se/patents/US6310376?utm_source=gb-gplus-sharePatent US6310376 - Semiconductor storage device capable of improving controllability of density and size of floating gate
