A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting...http://www.google.se/patents/US7122839?utm_source=gb-gplus-sharePatent US7122839 - Semiconductor light emitting devices with graded composition light emitting layers
