A method and device providing a strained Si film with reduced defects is provided, where the strained Si film forms a fin vertically oriented on a surface of a non-conductive substrate. The strained Si film or fin may form a semiconductor channel having relatively small dimensions while also having few...http://www.google.se/patents/US7247912?utm_source=gb-gplus-sharePatent US7247912 - Structures and methods for making strained MOSFETs
