Improved, planarized semiconductor structures are described. They are prepared by a method which involves the creation of a series of subminimum (i.e., 50 to 500 Angstroms thick) silicon pillars extending vertically upward from the base of a wide trench, and oxidizing the pillars. When the substrate...http://www.google.se/patents/US5453639?utm_source=gb-gplus-sharePatent US5453639 - Planarized semiconductor structure using subminimum features
