A method of fabricating a semiconductor structure. According to one aspect of the invention, on a first semiconductor substrate, a first compositionally graded Si1-xGex buffer is deposited where the Ge composition x is increasing from about zero to a value less than about 20%. Then a first etch-stop...http://www.google.se/patents/US7348259?utm_source=gb-gplus-sharePatent US7348259 - Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers
