The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate including a monocrystalline material is bonded to the first substrate. After the bonding, second...http://www.google.se/patents/US6429070?utm_source=gb-gplus-sharePatent US6429070 - DRAM cell constructions, and methods of forming DRAM cells
