A low switching field magnetoresistive tunneling junction memory cell including a first exchange coupled structure having a pair of magnetoresistive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, a second exchange...http://www.google.se/patents/US5966323?utm_source=gb-gplus-sharePatent US5966323 - Low switching field magnetoresistive tunneling junction for high density arrays
