A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing an oxygen ion implantation step to create a stable defect region; a low energy implantation step to create an amorphous layer adjacent to the stable defect region, wherein the low energy implantation...http://www.google.se/patents/US6486037?utm_source=gb-gplus-sharePatent US6486037 - Control of buried oxide quality in low dose SIMOX
