The invention concerns a method for forming metallization and contact structures in an integrated circuit. The method involoves the steps of etching a trench in the trench dielectric layer a trench dielectric layer of a composite structure containing a semiconductor substrate comprising an active region,...http://www.google.se/patents/US6635566?utm_source=gb-gplus-sharePatent US6635566 - Method of making metallization and contact structures in an integrated circuit
