Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic....http://www.google.se/patents/US7838935?utm_source=gb-gplus-sharePatent US7838935 - Glass-based SOI structures
