The method includes forming a first insulating layer over a substrate. A first metal layer is formed over the first insulating layer. The first metal layer is patterned to form a plurality of parallel bit lines. A second insulating layer is formed over the bit lines and first insulating layer. At least...http://www.google.se/patents/US6107666?utm_source=gb-gplus-sharePatent US6107666 - High density ROM and a method of making the same
