A single transistor vertical memory gain cell with long data retention times. The memory cell is formed from a silicon carbide substrate to take advantage of the higher band gap energy of silicon carbide as compared to silicon. The silicon carbide provides much lower thermally dependent leakage currents...http://www.google.se/patents/US7271052?utm_source=gb-gplus-sharePatent US7271052 - Long retention time single transistor vertical memory gain cell
