A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and an ion shower grid dividing the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane...http://www.google.se/patents/US20050211171?utm_source=gb-gplus-sharePatent US20050211171 - Chemical vapor deposition plasma reactor having an ion shower grid
