A method for producing a semiconductor device on a semiconductor layer provided on an insulator layer comprises the steps of providing an opening on the semiconductor layer to expose a top surface of the insulator layer, depositing a first material layer that has a hardness exceeding the hardness of...http://www.google.se/patents/US5162254?utm_source=gb-gplus-sharePatent US5162254 - Semiconductor device having a SOI substrate and fabrication method thereof
