A first semiconductor layer is epitaxially grown on a semiconductor substrate and patterned to form concave and convex portions. A second semiconductor layer is formed on the first semiconductor layer using a top epitaxial mask covering the top surface of the convex portion. Lattice defects D propagating...http://www.google.se/patents/US20010029086?utm_source=gb-gplus-sharePatent US20010029086 - Semiconductor device, method for fabricating the same and method for fabricating semiconductor substrate
