In a multilayer wiring structure, a plurality of wiring layers (9, 11, 13) are formed on an inorganic lowermost insulating film (2) formed on a silicon substrate (1), and organic interlayer insulating films (14, 15, 16, 17, 18) are interposed between the respective adjacent wiring layers. Via metal (8,...http://www.google.se/patents/US6163075?utm_source=gb-gplus-sharePatent US6163075 - Multilayer wiring structure and semiconductor device having the same, and manufacturing method therefor
