The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the...http://www.google.se/patents/US7067396?utm_source=gb-gplus-sharePatent US7067396 - Method of producing a thin layer of semiconductor material
