A method for forming an array of antifuse structures on a semiconductor substrate which previously has had CMOS devices fabricated thereupon up to first metallization. A fuse structure is formed as a sandwich by successively depositing a bottom layer of TiW, a layer of amorphous silicon, and a top layer...http://www.google.se/patents/US4914055?utm_source=gb-gplus-sharePatent US4914055 - Semiconductor antifuse structure and method
