This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A molecular beam source of Ga and source...http://www.google.se/patents/US5686738?utm_source=gb-gplus-sharePatent US5686738 - Highly insulating monocrystalline gallium nitride thin films
