A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode...http://www.google.se/patents/US20020081773?utm_source=gb-gplus-sharePatent US20020081773 - Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
