An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III...http://www.google.se/patents/US6121127?utm_source=gb-gplus-sharePatent US6121127 - Methods and devices related to electrodes for p-type group III nitride compound semiconductors
