AS conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided. Thickness of an electric connection...http://www.google.se/patents/US6791199?utm_source=gb-gplus-sharePatent US6791199 - Heat radiating semiconductor device
