A process for producing a metal oxide semiconductor (MOS) transistor is provided. At least two trenches are formed at a surface of a first substrate. Oxide is deposited onto the at least two trenches. The at least two trenches each have a surface spaced apart from the surface of the first substrate....http://www.google.se/patents/US6124185?utm_source=gb-gplus-sharePatent US6124185 - Method for producing a semiconductor device using delamination
