A method of forming a nanowire is disclosed. A nanowire having a first dimension is deposited on a first dielectric layer that is formed on a substrate. A sacrificial gate stack having a sacrificial dielectric layer and a sacrificial gate electrode layer is deposited over a first region of the nanowire...http://www.google.se/patents/US6897098?utm_source=gb-gplus-sharePatent US6897098 - Method of fabricating an ultra-narrow channel semiconductor device
