Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density....http://www.google.se/patents/US7220658?utm_source=gb-gplus-sharePatent US7220658 - Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
