A semiconductor device is formed on a substrate having an ESD region and an internal region. A protective layer is formed over a portion of the ESD region to be protected from formation of silicide and silicide is formed on portions of the Internal and ESD region which remain unprotected by the protective...http://www.google.se/patents/US6121092?utm_source=gb-gplus-sharePatent US6121092 - Silicide blocking process to form non-silicided regions on MOS devices
