A method of forming a bottom electrode of a capacitor in a memory device. A plurality of deep trenches is formed, in which the number of first deep trenches within an active area is higher than that of the second deep trenches within a peripheral area. After a doped oxide layer is formed, a photoresist...http://www.google.se/patents/US20030181016?utm_source=gb-gplus-sharePatent US20030181016 - METHOD OF FORMING A BOTTOM ELECTRODE OF A CAPACITOR IN A MEMORY DEVICE
