A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density i.sub.H -layer....http://www.google.se/patents/US5408120?utm_source=gb-gplus-sharePatent US5408120 - Light-emitting device of gallium nitride compound semiconductor
