A flip chip type of light-emitting semiconductor device using group III nitride compound includes a thick positive electrode. The positive electrode, which is made of at least one of silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt) and palladium (Pd), and an alloy including at least one of these...http://www.google.se/patents/US20040222434?utm_source=gb-gplus-sharePatent US20040222434 - Light-emitting semiconductor device using group III nitride compound
