In an LDD polysilicon thin-film transistor, the active layer is formed in a single body and the upper surface thereof is oxidized. A gate insulating layer has a bird's beak type structure and the source and drain region are simultaneously formed in high and low concentrations by performing one ion...http://www.google.se/patents/US5789283?utm_source=gb-gplus-sharePatent US5789283 - LDD polysilicon thin film transistor and manufacturing method thereof
