A rib-waveguide semiconductor laser device comprising a first clad layer, an active layer, an optical rib-waveguide layer and a second clad layer, each composed of III-V semiconductor material, and sequentially formed on an insulating substrate or a III-V semiconductor substrate, wherein the rib-waveguide...http://www.google.se/patents/US4647953?utm_source=gb-gplus-sharePatent US4647953 - Semiconductor laser device and method for manufacturing the same
