A high density vertical merged MOS-bipolar-capacitor gain cell is realized for DRAM operation. The gain cell includes a vertical MOS transistor having a source region, a drain region, and a floating body region therebetween. The gain cell includes a vertical bi-polar transistor having an emitter region,...http://www.google.se/patents/US7564087?utm_source=gb-gplus-sharePatent US7564087 - Merged MOS-bipolar capacitor memory cell
