A semiconductor device includes a semiconductor substrate having a device element, an interlayer dielectric layer (silicon oxide layer, BPSG layer) formed on the semiconductor substrate, a through hole defined in the interlayer dielectric layer, a barrier layer formed on surfaces of the interlayer dielectric...http://www.google.se/patents/US6429493?utm_source=gb-gplus-sharePatent US6429493 - Semiconductor device and method for manufacturing semiconductor device
