A method of the present invention forms a vertically oriented structure connected with a source/drain region through an open space. In one embodiment of the method wherein a capacitor storage node is formed, the open space is located between two word line gate stacks in a MOS DRAM memory...http://www.google.se/patents/US5786250?utm_source=gb-gplus-sharePatent US5786250 - Method of making a capacitor
