A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during...http://www.google.se/patents/US7556688?utm_source=gb-gplus-sharePatent US7556688 - Method for achieving low defect density AlGaN single crystal boules
