WO2012026966A1 - Emitter package with angled or vertical led - Google Patents

Emitter package with angled or vertical led Download PDF

Info

Publication number
WO2012026966A1
WO2012026966A1 PCT/US2011/001457 US2011001457W WO2012026966A1 WO 2012026966 A1 WO2012026966 A1 WO 2012026966A1 US 2011001457 W US2011001457 W US 2011001457W WO 2012026966 A1 WO2012026966 A1 WO 2012026966A1
Authority
WO
WIPO (PCT)
Prior art keywords
led
axis
package
led chip
chip
Prior art date
Application number
PCT/US2011/001457
Other languages
French (fr)
Inventor
David Todd Emerson
Alex Chi Keung Chan
Original Assignee
Cree, Inc.
Cree Hong Kong Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree, Inc., Cree Hong Kong Limited filed Critical Cree, Inc.
Priority to CN201180051188.7A priority Critical patent/CN103180976B/en
Publication of WO2012026966A1 publication Critical patent/WO2012026966A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7729—Chalcogenides
    • C09K11/7731—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0068—Arrangements of plural sources, e.g. multi-colour light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Definitions

  • This invention relates to light emitting diode packages and displays utilizing light emitting diode packages as their light source.
  • LEDs Light emitting diodes
  • LEDs are solid state devices that convert electric energy to light, and generally comprise one or more active layers of semiconductor material sandwiched between oppositely doped layers. When a bias is applied across the doped layers, holes and electrons are injected into the active layer where they recombine to generate light. Light is emitted from the active layer and from all surfaces of the LED.
  • Technological advances over the last decade or more has resulted in LEDs having a smaller footprint, increased emitting efficiency, and reduced cost. LEDs also have an increased operation lifetime compared to other emitters. For example, the operational lifetime of an LED can be over 50,000 hours, while the operational lifetime of incandescent bulb is approximately 2,000 hours. LEDs can also be more robust than other light sources and can consume less power. For these and other reasons, LEDs are becoming more popular and are now being used in more and more applications that have traditionally been the realm of incandescent, fluorescent, halogen and other emitters.
  • an LED chip In order to use an LED chip in conventional applications it is known to enclose an LED chip in a package to provide environmental and/or mechanical protection, color selection, light focusing and the like.
  • An LED package also includes electrical leads, contacts or traces for electrically connecting the LED package to an external circuit.
  • a typical two-pin LED package/component 10 illustrated in FIG. 1 a single LED chip 12 is mounted on a reflective cup 13 by means of a solder bond or conductive epoxy.
  • One or more wire bonds 11 connect the ohmic contacts of the LED chip 12. to leads 15A and/or 15B, which may be attached to or integral with the reflective cup 13.
  • the reflective cup 13 may be filled with an encapsulant material 16 and a wavelength conversion material, such as a phosphor, can be included over the LED chip or in the encapsulant.
  • a wavelength conversion material such as a phosphor
  • Light emitted by the LED at a first wavelength may be absorbed by the phosphor, which may responsively emit light at a second wavelength.
  • the entire assembly can then be encapsulated in a clear protective resin 14, which may be molded in the shape of a lens to direct or shape the light emitted from the LED chip 12.
  • FIG. 2 shows a top view of a conventional LED package 20 similar to the package 10 shown in FIG. 1 and including an LED chip 22 mounted at the base of a reflective cup 24. Wire bonds 26a and 26b are included to connect to the ohmic contacts of the LED chip 22, and the reflective cup 24 is filed with an encapsulant material 28.
  • the reflective cup 24 is oval shaped and the LED chip 22 is rectangular shaped, with the LED chip 22 and reflective cup 24 being longitudinally aligned. That is, longer edges of the LED chip are aligned with the reflective cup axis running along the elongated direction of the reflective cup.
  • Different LEDs packages can be used as the light source for displays, both big and small.
  • Large screen LED based displays (often referred to as giant screens) are becoming more common in many indoor and outdoor locations, such as at sporting arenas, race tracks, concerts and in large public areas such as Times Square in New York City. With current technology, some of these displays or screens can be as large as 60 feet tall and 60 feet wide. As technology advances it is expected that larger screens will be developed.
  • These screens can comprise thousands of "pixels” or “pixel modules”, each of which can contain a plurality of LEDs.
  • the pixel modules can use high efficiency and high brightness LEDs that allow the displays to be visible from relatively far away, even in the daytime when subject to sunlight.
  • the pixel modules can have as few as three or four LEDs (one red, one green, and one blue) that allow the pixel to emit many different colors of light from combinations of red, green and/or blue light. In the largest jumbo screens, each pixel module can have dozens of LEDs.
  • the pixel modules are arranged in a rectangular grid. In one type of display, the grid can be 640 modules wide and 480 modules high, with the size of the screen being dependent upon the actual size of the pixel modules.
  • Most conventional LED based displays are controlled by a computer system that accepts an incoming signal (e.g. TV signal) and based on the particular color needed at the pixel module to form the overall display image, the computer system determines which LED in each of the pixel modules is to emit light and how brightly.
  • a power system can also be included that provides power to each of the pixel modules and the power to each of the LEDs can be modulated so that it emits at the desired brightness.
  • Conductors are provided to apply the appropriate power signal to each of the LEDs in the pixel modules.
  • LED displays are rarely mounted at the viewer' s eye level, and are more typically mounted at an elevation above eye level, such as on the side of a building or the top of the grandstands in a stadium.
  • a conventional LED display 30 is shown mounted at an elevated point above the eye level of the viewer 32.
  • the viewer 32 is typically positioned below the display 30 and looks up to the display such that the viewer's line of sight 34 to- the display 30 is at an angle ⁇ to the display's perpendicular emission direction 36.
  • the LED display in FIG. 3 typically comprises a plurality of emitters 38 such as those shown in FIGs . 1 and 2 that exhibit a peak emission that is near the center of the horizontal and vertical axis.
  • Having a display comprising a plurality of LED packages 38 can result in display peak emission characteristics emitting in the perpendicular direction 36, as shown.
  • the Iv and far field pattern (FFP) peak- emission characteristics for the LED display 30 can be perpendicular to the display along the perpendicular axis 36.
  • the viewer's line of sight 34 is below perpendicular when the display 30 is mounted at an elevated point; much of the light emitted by the display is not seen by the viewer and is wasted. This can be true for viewers below the display and the side of the display.
  • One way to reduce the amount of light that is wasted is by mounting the display at an angle to better match the viewer's line of sight 34, but this can require complex and expensive mounting hardware that is difficult to use, particularly for very large displays mounted at high elevations.
  • Standard geometry LED packages as shown in FIGs . 1 and 2 allow for the longest reflection surface of the reflector cup (wide viewing angle) to be parallel with the longest emission side of the chip (wide viewing angle) .
  • This geometry also allows the shortest reflection surface of the reflector cup (narrow emitting angle) to be parallel with the shortest emission side of the chip (narrow viewing angle) .
  • This geometry also minimizes bond wire length, which can help minimize the wire bond failure rate.
  • the challenge with this arrangement is that it can require a near perfect match between the LED chip far-field pattern, the reflective cope and LED dome. Without this perfect match a large amount of diffuser can be necessary in the dome or encapsulant. Diffusers, however, can absorb light emitting from the packages, and thereby can reduce the emission brightness.
  • the present invention is directed to LED packages and LED displays utilizing the LED packages, wherein the LED chip or LED chips within the packages are arranged in unique orientations to provide the desired package or display FFP characteristics.
  • One embodiment of an LED package according to the present invention comprises a reflective cup and an LED chip mounted in the reflective cup.
  • the reflective cup has a first axis and a second axis that is orthogonal to the first axis, wherein the LED chip is rotated within the reflective cup so that the LED chip is out of alignment with the first axis.
  • Another embodiment of an LED package according to the present invention comprises a substrate and an LED chip mounted on the substrate.
  • the substrate has a first longitudinal axis, and the LED chip is mounted on the substrate so that the LED chip is out of alignment with the first axis.
  • Another embodiment of an LED package according to the present invention comprises a rectangular LED chip having a chip longitudinal axis and an oval shaped reflective cup having a cup longitudinal axis.
  • the LED chip is mounted within the reflective cup with the chip longitudinal axis angled from the cup longitudinal axis.
  • the LED packages according to the present invention can be arranged in LED displays to provide the desired display FFPs .
  • FIG. 1 is a side view of a conventional light emitting diode package
  • FIG. 2 is a top view of a conventional light emitting diode package
  • FIG. 3 is a schematic showing a LED display and a typical viewing angle
  • FIG. 4 is a top view of one embodiment of an LED package according to the present invention.
  • FIG. 5 is a graph showing the horizontal far-field pattern (FFP) for a conventional LED package
  • FIG. 6 is a graph showing the vertical FFP for a conventional LED package
  • FIG. 7 is a graph showing the horizontal FFP for one embodiment of an LED package according to the present invention.
  • FIG. 8 is a graph showing the vertical FFP for one embodiment of an LED package according to the present invention.
  • FIG. 9 is a graph showing the horizontal far-field pattern (FFP) for a conventional LED package.
  • FIG. 10 is a graph showing the vertical FFP for a conventional LED package
  • FIG. 11 is a graph showing the horizontal FFP for one embodiment of an LED package according to the present invention.
  • FIG. 12 is a graph showing the vertical FFP for one embodiment of an LED package according to the present invention.
  • FIG. 13 is a side view of a reflector cup that can be used in LED packages according to the present invention
  • FIG . 14 is a top view of the reflector cup shown in FIG . 13;
  • FIG. 15 is side view of the reflector cup shown in FIG. 13;
  • FIG. 16 is a side view of another reflector cup that can be used in LED packages according to the present invention.
  • FIG. 17 is a top view of the reflector cup shown in FIG. 16;
  • FIG. 18 is side view of the reflector cup shown in FIG. 16;
  • FIG. 19 is a graph showing the FFP for an LED display according to the present invention.
  • FIG. 20 is a graph showing the FFP for an LED display according to the present invention.
  • FIG. 21 is a top view of another embodiment of an LED package according to the present invention.
  • FIG. 22 is a perspective view of another embodiment of an LED package according to the present invention.
  • FIG. 23 is the top view of the LED package shown in FIG. 22;
  • FIG. 24 is a perspective view of another embodiment of an LED package according to the present invention.
  • FIG. 25 is top view of the LED package in FIG. 24;
  • FIG. 26 is a perspective view of still another embodiment of a LED package according to the present invention.
  • FIG. 27 is a top view of the LED package in FIG. 26. DETAILED DESCRIPTION OF THE INVENTION
  • the present invention is directed to LED packages and LED displays utilizing LED packages where the LED chips or chips within the packages can be angled or rotated in relation to the package (or other features as described below) to provide the desired emission characteristics.
  • the desired characteristics can include wider horizontal and/or vertical FFP for the LED packages, while in other embodiments the desired characteristics can include placing of FFP asymmetries in the desired location in the FFP. These can provide improved picture intensity and quality when viewing the packages and/or displays at different viewing angles. Rotating the LED chip can also result in a smoother, more uniform FFP compared to LED packages with conventionally oriented LED chips.
  • Rotating the chips also allow for a better match of the chip far- field emission with the reflector cup characteristics, to provide repeatable manufacturing of LED packages with similar desired emission characteristics. That is, an LED package can be provided with a more uniform FFP pattern, while at the same time allowing for more consistent package to package emission uniformity.
  • LED packages according to the present invention can have reflective cups that have different shapes, such as round, square, rectangular, or other polygon shapes.
  • the LED chips used in different packages can have different shapes, such as square, circular, oval, rectangular or other polygon shapes.
  • the reflective cup can be circular and the LED chips can be square, with the LED chip rotated and an angle to the axis of the reflective cup or the LED package.
  • LED packages according to the present invention can be arranged without reflective cups with the LED chip mounted on a substrate or submount, and other LED packages can comprise LED chip arrays instead of a single LED chip.
  • the above embodiments can be described herein with reference to reflective cups with one axis that is longer than its orthogonal axis.
  • the present invention is equally applicable to embodiments having a package, substrate, submount or lens with one axis that is longer than its orthogonal axis.
  • the present invention is applicable to packages, substrates and submounts having a longer and a shorter orthogonal axis or a package having a lens, with the lens having a longer and shorter orthogonal axis.
  • the LED chip is rotated out of alignment with the longer axis or rotated such that it is out of alignment with both the longer and shorter axis.
  • the present invention is described herein with reference to certain embodiments, but it is understood that the invention can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
  • many different LED, reflective cup and lead frame arrangements can be provided beyond those described above, and the encapsulant can provide further features to improve the reliability and emission characteristics from the LED packages and LED displays utilizing the LED packages.
  • some of the embodiments are described herein with reference to a reflective cup, it is understood that the present invention is equally applicable to any embodiments having any type of reflective cavity, or no reflective cup.
  • the different embodiments of LED packages discussed below are directed to use in LED displays, they can be used in many other applications either individually or with other LED packages having the same or different peak emission tilt.
  • first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
  • Embodiments of the invention are described herein with reference to cross-sectional view illustrations that are schematic illustrations of embodiments of the invention. As such, the actual thickness of the layers can be different, and variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances are expected. Embodiments of the invention should not be construed as limited to the particular shapes of the regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. A region illustrated or described as square or rectangular will typically have rounded or curved features due to normal manufacturing tolerances. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the invention.
  • FIG. 4 shows one embodiment of LED package 50 according to the present invention that generally comprises a reflective cup 54, with an LED chip 56 mounted at the base of the reflective cup 54.
  • the LED package can comprise a two-pin lead frame (not shown but similar to those shown in FIG. 1) that can be made of conventional materials using known manufacturing methods.
  • An electrical signal can be applied to the LED 56 through the two pins of the lead frame section, with wire bonds 58a, 58b providing an electrical path between the lead frame and the LED 56 to carry an electrical signal to the LED 56 that causes it to emit light.
  • LED chip or LED chips
  • LED chips can be fabricated using known processes with a suitable process being fabrication using metal organic chemical vapor deposition (MOCVD) .
  • MOCVD metal organic chemical vapor deposition
  • the layers of the LED chips generally comprise an active layer/region sandwiched between first and second oppositely doped epitaxial layers all of which are formed successively on a growth substrate.
  • LED chips can be formed on a wafer and then singulated for mounting in a package. It is understood that the growth substrate can remain as part of the final singulated LED chip or the growth substrate can be fully or partially removed.
  • the active region can comprise single quantum well (SQW) , multiple quantum well (MQW) , double heterostructure or super lattice structures.
  • SQW single quantum well
  • MQW multiple quantum well
  • the active region and doped layers may be fabricated from different material systems, with preferred material systems being Group-Ill nitride based material systems.
  • Group-Ill nitrides refer to those semiconductor compounds formed between nitrogen and the elements in the Group III of the periodic table, usually aluminum (Al), gallium (Ga) , and indium (In) .
  • the term also refers to ternary and quaternary compounds such as aluminum gallium nitride (AlGaN) and aluminum indium gallium nitride (AlInGaN) .
  • the doped layers are gallium nitride (GaN) and the active region is InGaN.
  • the doped layers may be AlGaN, aluminum gallium arsenide (AlGaAs) or aluminum gallium indium arsenide phosphide (AlGalnAsP) .
  • the growth substrate can be made of many materials such as sapphire, silicon carbide, aluminum nitride (A1N) , gallium nitride (GaN) , with a suitable substrate being a 4H polytype of silicon carbide, although other silicon carbide polytypes can also be used including 3C, 6H and 15R polytypes. Silicon carbide has certain advantages, such as a closer crystal lattice match to Group III nitrides than sapphire and results in Group III nitride films of higher quality.
  • Silicon carbide also has a very high thermal conductivity so that the total output power of Group-Ill nitride devices on silicon carbide is not limited by the thermal dissipation of the substrate (as may be the case with some devices formed on sapphire) .
  • SiC substrates are available from Cree Research, Inc., of Durham, North Carolina and methods for producing them are set forth in the scientific literature as well as in a U.S. Patents, Nos. Re. 34,861; 4,946,547; and 5,200,022.
  • LED chips can also comprise a conductive current spreading structure and wire bond pads on the top surface, both of which are made of a conductive material that can be deposited using known methods. Some materials that can be used for these elements include Au, Cu, Ni, In, Al, Ag or combinations thereof and conducting oxides and transparent conducting oxides.
  • the current spreading structure can comprise conductive fingers arranged in a grid on LEDs 56 with the fingers spaced to enhance current spreading from the pads into the LED chip's top surface. In operation, an electrical signal is applied to the pads through a wire bond as described below, and the electrical signal spreads through the fingers of the current spreading structure and the top surface into the LED chips. Current spreading structures are often used in LED chips where the top surface is p-type, but can also be used for n-type materials .
  • the LED chips described herein can be coated with one or more phosphors with the phosphors absorbing at least some of the LED chip light and emitting a different wavelength of light such that the LED chip emits a combination of light from the LED chip and the phosphor.
  • the white emitting LED chips have an LED chip that emits light in the blue wavelength spectrum and the phosphor absorbs some of the blue light and re-emits yellow.
  • the LED chips emit a white light combination of blue and yellow light.
  • the LED chips emit a non-white light combination of blue and yellow light as described in U.S. Patent No. 7, 213, 940.
  • the phosphor comprises commercially available YAG:Ce, although a full range of broad yellow spectral emission is possible using conversion particles made of phosphors based on the (Gd, Y) 3 (Al , Ga) 5O12 : Ce system, such as the Y 3 Al 5 0i 2 :Ce (YAG) .
  • Other yellow phosphors that can be used for white emitting LED chips include:
  • the different LED chips can also comprise red, green and blue emitting LEDs can be made of structures and materials that permit emission of the desired light directly from the active region.
  • red light can emit directly from the active region in LEDs made of certain materials such as AlInGaP.
  • the LED chips can be coated with the desired conversion material (e.g. phosphor) that provides the desired emission.
  • red emitting LED chips can comprise LED chips covered by a phosphor that absorbs the LED chip light and emits a red light.
  • the LED chips can emit blue or UV light and some phosphors appropriate for these structures can comprise: Lu 2 0 3 :Eu 3+; ( Sr2- x La x ) ( Cei_ x Eu x )0 4 ; Sr 2 - x Eu x Ce0 4 ; SrTi0 3 : Pr 3+ , Ga 3+ ; CaAlSiN 3 : Eu 2+ ; and Sr 2 Si 5 N 8 :Eu 2+ .
  • the red, green and blue LED chips can be used in separate LED packages and used in LED display pixel as described above.
  • the LED chips can be in packages having multiple of the red, green and blue LED chips.
  • Some of these LED package embodiments can have all of the red, green and blue LED chips, each of which has its own intensity control to allow the package to emit many different color combinations of red, green and blue light.
  • Phosphor coated LED chips be coated using many different methods, with one suitable method being described in U.S. Patent Applications Serial Nos. 11/656,759 and 11/899,790, both entitled “Wafer Level Phosphor Coating Method and Devices Fabricated Utilizing Method", and both of which are incorporated herein by reference.
  • the LEDs can be coated using other methods such as electrophoretic deposition (EPD) , with a suitable EPD method described in U.S. Patent Application No. 11/473,089 entitled “Close Loop Electrophoretic Deposition of Semiconductor Devices", which is also incorporated herein by reference. It is understood that LED packages according to the present invention can also have multiple LEDs of different colors, one or more of which may be white emitting .
  • the reflective cup 54 is oval shaped. That is, when viewing the reflective cup 54 from above, it has a first or longitudinal axis 60 longer than the second axis 62 (i.e. its vertical axis) .
  • the reflective cups according to the present invention can have many different sizes and dimensions.
  • the LED chip 56 is rectangular shaped, and is not mounted in alignment with the first (longitudinal) axis 60 of the reflective cup 54, but is instead mounted in alignment with the second axis 62 of the reflective cup. In this arrangement, the longer sides 64 of the LED 56 are aligned with the shorter sides 66 of the reflective cup 54, and the shorter LED sides 68 are aligned with the longer sides 70 of the reflective cup 54.
  • This alignment can provide certain desirable LED package emission characteristics as discussed above and can relax the matching requirements of the LED package components as discussed above. That LED packages according to the present invention can be more tolerant to manufacturing variations that would, by comparison, result in a much greater negative impact on the FFP of conventional LED packages. Such manufacturing variations can include shape of the reflective cup and LED chip, placement of the LED chip in the reflective cup or placement of the wire bonds, and variation in the encapsulant .
  • FIGs. 5 and 6 show examples of the emission intensity characteristics for an LED package without lenses and having a conventionally oriented LED chip as shown in FIG. 2 above.
  • FIG. 5 shows the horizontal far field pattern (FFP) 80 having a 50% emission intensity 82 at approximately 70 degrees horizontal radiation angle.
  • FIG. 6 shows the vertical FFP 84 having a 50% emission intensity 86 at approximately 58 degrees vertical radiation pattern.
  • FIGs. 7 and 8 show examples of emission intensity characteristics for an LED package having a vertical oriented LED chip as shown in FIG. 4, and in the same reflective cup as the LED package providing the emission characteristics shown in FIGs. 5 and 6.
  • FIG. 7 shows the horizontal FFP 88 having a 50% emission intensity 90 at approximately 76 degrees horizontal radiation angle.
  • FIG. 8 shows the vertical FFP 92 having a 50% emission intensity 94 at approximately 65 degrees vertical emission intensity.
  • the package with the vertical oriented LED chip has a wider viewing angle and 50% intensity in both horizontal and vertical radiation angles.
  • the emission pattern also comprises fewer non-uniformities and has a smoother drop-off in radiation intensity through different emission angles.
  • the differences can be attributed to different factors such as the longer emission surface of the LED chip emitting a greater integrated intensity in the horizontal direction.
  • the increase in the vertical emission intensity can also be attributed to a number of factors, such as the edge of the LED chip being closer to the reflective surface in the vertical direction. It is noted that there can be other differences between the FFP emission for the rotated or vertical LED chip arrangement.
  • One potential difference is that the peak emission intensity for the vertical chip LED packages can be narrower, but the radiation intensity drops off at less of an angle (more slowly at greater angles) .
  • FIGs. 9 and 10 show examples of the emission intensity characteristics for a conventional LED package following tin soldering and encapsulation having a conventionally oriented LED chip as shown in FIG. 2 above.
  • FIG. 9 shows the horizontal FFP 100 having a 50% emission intensity 102 at approximately 94 degrees horizontal radiation angle.
  • FIG. 10 shows a vertical FFP 104 having a 50% emission intensity 106 at approximately 44 degrees vertical radiation pattern.
  • These FFPs can be similar LEDs emitting different colors of light, with the FFPs 100 and 104 being for an LED package with a green emitting LED chip.
  • the FFPs and 50% radiation emission intensities would be nearly the same at approximately 95 degrees horizontal and 43 degrees vertical .
  • FIGs. 11 and 12 show examples of emission intensity characteristics for an LED package according to the present invention having a vertical oriented LED chip as shown in FIG. 4.
  • the LED chip is arranged in the same or similar reflective cup as the LED package providing the emission characteristics shown in FIGs. 9 and 10.
  • FIG. 11 shows the horizontal FFP 108 having a 50% emission intensity 110 at approximately 101 degrees horizontal radiation angle.
  • FIG. 12 shows the vertical FFP 112 having a 50% emission intensity 114 at approximately 48 degrees vertical emission intensity.
  • the emission pattern shown is for LED packages with green emitting LED chips. The emission patterns would be similar for LED packages having LED chips emitting other colors of light. For LED packages with blue emitting LED chip the FFP and 50% radiation emission intensities would be nearly the same at approximately 102 degrees horizontal and 48 degrees vertical .
  • the 50% horizontal emission intensity angle can be up to 120 degrees, while the 50% vertical emission intensity angle can be up to 70 degrees.
  • the 50% horizontal intensity angle is 115 degrees, and the 50% vertical angle is 65 degrees.
  • the 50% horizontal intensity angle can be 108 degrees, and the 50% vertical intensity angle can 58 degrees.
  • the increase in emission intensity angles can increase in the range of 0 to 5% compared to that of conventional LED packages having horizontal oriented LED chips. In other embodiments the increase can be in the range of 0 to 10%, while in other embodiments the increase can be in the range of 0 to 15%.
  • FIGs. 13 through 15 show one embodiment of an oval shaped reflective cup 120 that can be used in LED packages according to the present invention.
  • Reflective cup 120 has a length and width of approximately 1.26mm by 1.01mm.
  • the reflective cup 120 has a base 122 with a length of approximately .9mm long and .65mm wide, and an angled reflective surface 124 approximately 0.15mm high with an approximate 100 degree opening.
  • FIGs. 16 through 18 show another embodiment of a reflective cup 130 having a shape similar to reflective cup 120.
  • Reflective cup 130 has a base 132 that is the same size of base 122 in reflective cup 120.
  • the angled surface 134 has a height of approximately 0.25mm and an approximate 80 degree opening. This results in a package the is 1.32mm long and 1.07mm wide. These are only two examples of the many different shapes and sizes of reflective cups that can be used in LED packages according to the present invention.
  • the LED packages can have LED chips with different shapes and sizes, with the rectangular shaped LED chips having a length greater that their width.
  • the length can be up to ⁇ and the width can be up to 500 ⁇ .
  • the length can be up to 500 ⁇ and the width can be up to 300 ⁇ .
  • the LED chip can have a length of approximately 480 ⁇ and a width of approximately 260 ⁇ .
  • the LED packages according to the present invention can be used to form LED displays with the LED displays having an improved far field pattern.
  • LED displays can be provided according to the present invention with many different numbers of LED modules or pixels.
  • the LED displays can have between 1 and 100,000 modules or pixels.
  • the LED displays can have between 100,000 and 200,000 modules or pixels, while in other embodiments the LED displays can have between 200,000 and 300,000 modules or pixels.
  • the LED displays can have more than 300, 000 pixels or modules.
  • the pixel or modules are arranged in a rectangular grid. For example, a grid can be 640 modules/pixels wide and 480 modules/pixels high, with the end size of the screen being dependent upon the actual size of the modules/pixels.
  • the displays according to the present invention can be many different shapes and sizes with many of these displays being as large as 60 feet tall and 60 feet wide.
  • FIG. 19 shows emission intensity curve 140 for the horizontal FFP for one embodiment of an LED display utilizing LED packages according to the present invention.
  • the screen exhibits substantially flat emission intensity characteristics through a range of up to 120 degrees of horizontal viewing angles. This provides improved viewing of the LED display at a greater range of angles, with the LED image having substantially the same intensity at the normal 0° viewing degree as at any viewing angle up to 60° on either side of normal. Accordingly, the image retains its quality at a larger range of angles compared to conventional LED based displays.
  • FIG. 20 shows a screen curve 150 for the vertical far field pattern for one embodiment of an LED display utilizing LED packages according to the present invention.
  • the vertical pattern follows more of a Lambertian pattern than the LED packages described above and used in the display not having increased vertical emission angles. It is understood that in other embodiments, some or all of the LED packages can be arranged to have higher vertical viewing angles, with the vertical screen curve exhibiting a flat portion similar to that shown in FIG. 19.
  • the LED displays according to the present invention utilizing the LED packages according to the present invention can also exhibit improved emission intensity curve matching within a range of vertical viewing angles.
  • the LED display according to the present invention provides for matching screen curves and far field patterns for the red, green and blue LEDs at these angles. Although the intensity of the light may be lower as the viewing angles increase, color quality of the picture is maintained by the emitters having the same emission curves.
  • the displays according to the present invention can also comprise different combinations of LED packages. That is, the LED packages in the different displays do not need to all have the same features to increase emission angles.
  • the LED packages according to the present invention can also be used in many different lighting applications beyond LED displays, and in particular those using a small sized high output light sources reguiring increased emission angles. Some of these include, but are not limited to, street lights, architectural lights, home and office lighting, display lighting and backlighting.
  • the present invention can also be utilized to compensate for certain undesirable emission characteristics.
  • FFP non-uniformities or asymmetries can be caused by features of the LED package, such as the bond pad asymmetry, bond wire size and location, current spreading finger geometry, etc.
  • An LED chip can also emit an asymmetric FFP.
  • These FFP non-uniformities and asymmetries can be minimal and may be acceptable to the end user.
  • rotation of the LED chip in a reflective cup can also allow for the control to place the imperfection in a most acceptable location in the FFP. End users many want the imperfections in the far- field to be placed in a certain position in the module or fixture to make them more or less apparent.
  • the packages can comprise special optics, special solder boards, or attaching the package in a rotated orientation.
  • the LED packages according to the present invention can also achieve this selective location of the far field asymmetries by rotating the LED chip in the reflective cup or package.
  • the rectangular LED chip can also be rotated in reflective cups having different shapes other than oval shaped.
  • the LED chips can take many different shapes beyond rectangular, and these differently shaped LEDs can be mounted in reflective cups having many different shapes. In all of these, rotation would result in the FFP asymmetries being in different locations.
  • FIG. 21 shows another embodiment of an LED package 200 according to the present invention that is a two pin type package similar to the embodiment shown in FIG. 4. It comprises an LED chip 202 mounted to the base of a reflective cup 204, with wire bonds 206a, 206b connected between the package pins and the LED chip for applying an electrical signal to the LED chip.
  • the LED chip 202 is square and the reflective cup 204 is circular.
  • the reflective cup 204 comprising a first axis 210 that is generally aligned with package pins, and a second axis 212 that is orthogonal to the first axis 210.
  • the LED chip 202 is mounted in the reflective cup 204 off alignment with the first and second axis 210, 212.
  • the LED chip 202 is at an angle or rotated in relation to both the axis 210, 212.
  • the FFP asymmetries can be at a different location in the FFP compared to an package with the LED chip aligned with the axis.
  • the LED chip 202 can be rotated at many different angles within the range of 0 to 90 degrees. In the embodiment shown, the LED chip 202 is rotated at an angle of approximately 45 degrees to the axis 210, 212.
  • FIGs. 22 and 23 show another embodiment of a surface mount LED package 220 according to the present invention comprising a substrate 222, a reflective cup 224 mounted to the substrate 222, and a square LED chip 226 (shown in FIG. 23) mounted to the substrate 222 within the reflective cup 224.
  • the LED chip 226 can be many different shapes other than square.
  • the LED package 220 further comprises a lens 227 over the reflective cup 224.
  • the LED package 220 is arranged similar to LED packages available from Cree, Inc., in Durham, North Carolina under the XLamp® XR-E and XLamp® XR-C model designators.
  • the LED package 220 has a first axis 231 running between the package contacts 232a, 232b and a second axis 234 that is orthogonal to the first axis 231.
  • the LED chip 226 is angled or rotated in the reflective cup so that its edges are not aligned with the first or second axis 231, 234. This can be done to change the location of the FFP asymmetries as discussed above.
  • the LED chip 226 can be arranged at many different angles to the axis 231, 234 in the range of 0 to 90 degrees. In the embodiment shown, the LED chip can be arranged with its edges at an 45 degree angle to the axis 231, 234. [0082] FIGs.
  • FIGS. 24 and 25 show another embodiment of an LED package 240 according to the present invention comprising a substrate 242 with an LED chip 244 mounted to the substrate 242.
  • a lens 246 can be molded on the substrate 242 in a hemispheric shape over the LED chip 244.
  • the LED package 240 is arranged similar to LED packages available from Cree, Inc., in Durham, North Carolina under the XLamp® XP-E and XLamp® XP-G model designators.
  • the LED package 240 comprises a first axis 248 running between the package contacts 250a, 250b, and a second axis 252 orthogonal to the first axis 248.
  • the LED chip is angled or rotated with its edges out of alignment with the first and second axis 248, 252.
  • the range or rotation can be 0 to 90 degrees, with the embodiment shown having an LED chip rotated approximately 45 degrees.
  • the LED package embodiments discussed above have a single LED chip mounted in reflective cup or mounted to a substrate. It is understood that other LED package embodiments can have more than one LED chip mounted within a reflective cup or on a substrate. All or some of the multiple LED chips in these embodiments can be rotated, and in other embodiment each of the LED chips can have the same angle of rotation or some can have different angles of rotation. The particular angle for each LED chip can be dictated by a number of factors, with one being the particular FFP asymmetries for the particular chip and the desired location for the FFP patter asymmetry.
  • FIGs. 26 and 27 show one embodiment of a multiple chip LED package 260 according to the present invention comprising a substrate 262 and a 4-chip LED array 264 (shown in FIG. 27) mounted to the substrate 262.
  • a lens 266 is formed on the substrate 262 over the LED array 264.
  • the LED package 260 is arranged similar to LED packages available from Cree, Inc., in Durham, North Carolina under the XLamp® MC-E model designator.
  • the LED package 260 comprises a first axis 268 running between the first contacts 270a on one side of the substrate 262 and the second contacts 270b on the opposite side.
  • the package 260 also comprises a second axis 272 orthogonal to the first axis 268.
  • the LED array 264 comprises square LED chips arranged in a square array, but it is understood that the LED chips can have many different shapes and the array can also have many different shapes.
  • the LED array 264 is angled or rotated on the substrate 262 so that the edges of the array is not aligned with either axis 268, 270.
  • the LED array 264 can be rotated at any angle to the axis in the range of 0-90 degrees, with the array shown having an angle of approximately 45 degrees to the axis.

Abstract

The present invention is directed to LED packages and LED displays utilizing the LED packages, wherein the LED chips within the packages are arranged in unique orientations to provide the desired package or display FFP. One LED package according to the present invention comprises a reflective cup and an LED chip mounted in the reflective cup. The reflective cup has a first axis and a second axis orthogonal to the first axis, wherein the LED chip is rotated within the reflective cup so that the LED chip is out of alignment with said first axis. Some of the LED packages can comprise a rectangular LED chip having a chip longitudinal axis and an oval shaped reflective cup having a cup longitudinal axis. The LED chip is mounted within the reflective cup with the chip longitudinal axis angled from the cup longitudinal axis. LED displays according to the present invention comprise a plurality of LED packages, at least some of which have an LED chip mounted in a reflective cup at different angles to achieve the desired display FFP.

Description

EMITTER PACKAGE WITH ANGLED OR VERTICAL LED
This application is a continuation in part of U.S. Patent Application Publication No. 2010/0090233, filed on December 11, 2009, entitled "Side View Surface Mount White LED", which is a continuation of U.S. Patent Application No. 11/739, 307, filed on April 24, 2007 (now Patent No. 7,649,209), also entitled "Side View Surface Mount White LED", which claims the benefit of U.S. Provisional Application No. 60/745,478, filed on April 24, 2006.
BACKGROUND OF THE INVENTION
Field of the Invention
[0001] This invention relates to light emitting diode packages and displays utilizing light emitting diode packages as their light source.
Description of the Related Art
[0002] Light emitting diodes (LED or LEDs) are solid state devices that convert electric energy to light, and generally comprise one or more active layers of semiconductor material sandwiched between oppositely doped layers. When a bias is applied across the doped layers, holes and electrons are injected into the active layer where they recombine to generate light. Light is emitted from the active layer and from all surfaces of the LED. [0003] Technological advances over the last decade or more has resulted in LEDs having a smaller footprint, increased emitting efficiency, and reduced cost. LEDs also have an increased operation lifetime compared to other emitters. For example, the operational lifetime of an LED can be over 50,000 hours, while the operational lifetime of incandescent bulb is approximately 2,000 hours. LEDs can also be more robust than other light sources and can consume less power. For these and other reasons, LEDs are becoming more popular and are now being used in more and more applications that have traditionally been the realm of incandescent, fluorescent, halogen and other emitters.
[0004] In order to use an LED chip in conventional applications it is known to enclose an LED chip in a package to provide environmental and/or mechanical protection, color selection, light focusing and the like. An LED package also includes electrical leads, contacts or traces for electrically connecting the LED package to an external circuit. In a typical two-pin LED package/component 10 illustrated in FIG. 1, a single LED chip 12 is mounted on a reflective cup 13 by means of a solder bond or conductive epoxy. One or more wire bonds 11 connect the ohmic contacts of the LED chip 12. to leads 15A and/or 15B, which may be attached to or integral with the reflective cup 13. The reflective cup 13 may be filled with an encapsulant material 16 and a wavelength conversion material, such as a phosphor, can be included over the LED chip or in the encapsulant. Light emitted by the LED at a first wavelength may be absorbed by the phosphor, which may responsively emit light at a second wavelength. The entire assembly can then be encapsulated in a clear protective resin 14, which may be molded in the shape of a lens to direct or shape the light emitted from the LED chip 12.
[0005] FIG. 2 shows a top view of a conventional LED package 20 similar to the package 10 shown in FIG. 1 and including an LED chip 22 mounted at the base of a reflective cup 24. Wire bonds 26a and 26b are included to connect to the ohmic contacts of the LED chip 22, and the reflective cup 24 is filed with an encapsulant material 28. In package 20, the reflective cup 24 is oval shaped and the LED chip 22 is rectangular shaped, with the LED chip 22 and reflective cup 24 being longitudinally aligned. That is, longer edges of the LED chip are aligned with the reflective cup axis running along the elongated direction of the reflective cup.
[0006] Different LEDs packages, such as those shown in FIGs . 1 and 2, can be used as the light source for displays, both big and small. Large screen LED based displays (often referred to as giant screens) are becoming more common in many indoor and outdoor locations, such as at sporting arenas, race tracks, concerts and in large public areas such as Times Square in New York City. With current technology, some of these displays or screens can be as large as 60 feet tall and 60 feet wide. As technology advances it is expected that larger screens will be developed.
[0007] These screens can comprise thousands of "pixels" or "pixel modules", each of which can contain a plurality of LEDs. The pixel modules can use high efficiency and high brightness LEDs that allow the displays to be visible from relatively far away, even in the daytime when subject to sunlight. The pixel modules can have as few as three or four LEDs (one red, one green, and one blue) that allow the pixel to emit many different colors of light from combinations of red, green and/or blue light. In the largest jumbo screens, each pixel module can have dozens of LEDs. The pixel modules are arranged in a rectangular grid. In one type of display, the grid can be 640 modules wide and 480 modules high, with the size of the screen being dependent upon the actual size of the pixel modules.
[0008] Most conventional LED based displays are controlled by a computer system that accepts an incoming signal (e.g. TV signal) and based on the particular color needed at the pixel module to form the overall display image, the computer system determines which LED in each of the pixel modules is to emit light and how brightly. A power system can also be included that provides power to each of the pixel modules and the power to each of the LEDs can be modulated so that it emits at the desired brightness. Conductors are provided to apply the appropriate power signal to each of the LEDs in the pixel modules.
[0009] LED displays are rarely mounted at the viewer' s eye level, and are more typically mounted at an elevation above eye level, such as on the side of a building or the top of the grandstands in a stadium. Referring now to FIG. 3, a conventional LED display 30 is shown mounted at an elevated point above the eye level of the viewer 32. The viewer 32 is typically positioned below the display 30 and looks up to the display such that the viewer's line of sight 34 to- the display 30 is at an angle Θ to the display's perpendicular emission direction 36. The LED display in FIG. 3 typically comprises a plurality of emitters 38 such as those shown in FIGs . 1 and 2 that exhibit a peak emission that is near the center of the horizontal and vertical axis.
[0010] Having a display comprising a plurality of LED packages 38 can result in display peak emission characteristics emitting in the perpendicular direction 36, as shown. The Iv and far field pattern (FFP) peak- emission characteristics for the LED display 30 can be perpendicular to the display along the perpendicular axis 36. The viewer's line of sight 34 is below perpendicular when the display 30 is mounted at an elevated point; much of the light emitted by the display is not seen by the viewer and is wasted. This can be true for viewers below the display and the side of the display. One way to reduce the amount of light that is wasted is by mounting the display at an angle to better match the viewer's line of sight 34, but this can require complex and expensive mounting hardware that is difficult to use, particularly for very large displays mounted at high elevations.
[0011] Viewers are often not directly in front of an LED based display when it is viewed. Depending on where the viewer is located the horizontal viewing angle can be different. Furthermore, when a person is moving by an LED display, such as walking by, it is viewed at many different horizontal angles. Typical LED displays with peak emissions near the center can experience a drop-off in emission intensity at different horizontal angles. The far field pattern (FFP) for the different LED packages in each of the pixels can also be different such that the LED display can experience image quality variations when viewed from different angles.
[0012] Because of this, it can be important for the FFP emission characteristics of the red, green and blue LED packages used in LED displays pixels to be smooth, as wide as possible, and matched between the red, green, and blue colors. Standard geometry LED packages as shown in FIGs . 1 and 2 allow for the longest reflection surface of the reflector cup (wide viewing angle) to be parallel with the longest emission side of the chip (wide viewing angle) . This geometry also allows the shortest reflection surface of the reflector cup (narrow emitting angle) to be parallel with the shortest emission side of the chip (narrow viewing angle) . This geometry also minimizes bond wire length, which can help minimize the wire bond failure rate. The challenge with this arrangement is that it can require a near perfect match between the LED chip far-field pattern, the reflective cope and LED dome. Without this perfect match a large amount of diffuser can be necessary in the dome or encapsulant. Diffusers, however, can absorb light emitting from the packages, and thereby can reduce the emission brightness.
SUMMARY OF THE INVENTION
[0013] The present invention is directed to LED packages and LED displays utilizing the LED packages, wherein the LED chip or LED chips within the packages are arranged in unique orientations to provide the desired package or display FFP characteristics. One embodiment of an LED package according to the present invention comprises a reflective cup and an LED chip mounted in the reflective cup. The reflective cup has a first axis and a second axis that is orthogonal to the first axis, wherein the LED chip is rotated within the reflective cup so that the LED chip is out of alignment with the first axis.
[0014] Another embodiment of an LED package according to the present invention comprises a substrate and an LED chip mounted on the substrate. The substrate has a first longitudinal axis, and the LED chip is mounted on the substrate so that the LED chip is out of alignment with the first axis.
[0015] Another embodiment of an LED package according to the present invention comprises a rectangular LED chip having a chip longitudinal axis and an oval shaped reflective cup having a cup longitudinal axis. The LED chip is mounted within the reflective cup with the chip longitudinal axis angled from the cup longitudinal axis.
[0016] The LED packages according to the present invention can be arranged in LED displays to provide the desired display FFPs . These and other aspects and advantages of the invention will become apparent from the following detailed description and the accompanying drawings which illustrate by way of example the features of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] FIG. 1 is a side view of a conventional light emitting diode package;
[0018] FIG. 2 is a top view of a conventional light emitting diode package; [0019] FIG. 3 is a schematic showing a LED display and a typical viewing angle;
[0020] FIG. 4 is a top view of one embodiment of an LED package according to the present invention;
[0021] FIG. 5 is a graph showing the horizontal far-field pattern (FFP) for a conventional LED package;
[0022] FIG. 6 is a graph showing the vertical FFP for a conventional LED package;
[0023] FIG. 7 is a graph showing the horizontal FFP for one embodiment of an LED package according to the present invention;
[0024] FIG. 8 is a graph showing the vertical FFP for one embodiment of an LED package according to the present invention;
[0025] FIG. 9 is a graph showing the horizontal far-field pattern (FFP) for a conventional LED package;
[0026] FIG. 10 is a graph showing the vertical FFP for a conventional LED package;
[0027] FIG. 11 is a graph showing the horizontal FFP for one embodiment of an LED package according to the present invention;
[0028] FIG. 12 is a graph showing the vertical FFP for one embodiment of an LED package according to the present invention;
[0029] FIG. 13 is a side view of a reflector cup that can be used in LED packages according to the present invention; [0030] FIG . 14 is a top view of the reflector cup shown in FIG . 13;
[0031] FIG. 15 is side view of the reflector cup shown in FIG. 13;
[0032] FIG. 16 is a side view of another reflector cup that can be used in LED packages according to the present invention;
[0033] FIG. 17 is a top view of the reflector cup shown in FIG. 16;
[0034] FIG. 18 is side view of the reflector cup shown in FIG. 16;
[0035] FIG. 19 is a graph showing the FFP for an LED display according to the present invention;
[0036] FIG. 20 is a graph showing the FFP for an LED display according to the present invention;
[0037] FIG. 21 is a top view of another embodiment of an LED package according to the present invention;
[0038] FIG. 22 is a perspective view of another embodiment of an LED package according to the present invention;
[0039] FIG. 23 is the top view of the LED package shown in FIG. 22;
[0040] FIG. 24 is a perspective view of another embodiment of an LED package according to the present invention;
[0041] FIG. 25 is top view of the LED package in FIG. 24; [0042] FIG. 26 is a perspective view of still another embodiment of a LED package according to the present invention; and
[0043] FIG. 27 is a top view of the LED package in FIG. 26. DETAILED DESCRIPTION OF THE INVENTION
[0044] The present invention is directed to LED packages and LED displays utilizing LED packages where the LED chips or chips within the packages can be angled or rotated in relation to the package (or other features as described below) to provide the desired emission characteristics. In some embodiments the desired characteristics can include wider horizontal and/or vertical FFP for the LED packages, while in other embodiments the desired characteristics can include placing of FFP asymmetries in the desired location in the FFP. These can provide improved picture intensity and quality when viewing the packages and/or displays at different viewing angles. Rotating the LED chip can also result in a smoother, more uniform FFP compared to LED packages with conventionally oriented LED chips. Rotating the chips also allow for a better match of the chip far- field emission with the reflector cup characteristics, to provide repeatable manufacturing of LED packages with similar desired emission characteristics. That is, an LED package can be provided with a more uniform FFP pattern, while at the same time allowing for more consistent package to package emission uniformity.
[0045] There are also a number of other advantages provided by the present invention. By rotating the LED chip in LED packages according to the present invention, the amount of diffuser necessary to optimize the FFP can also be reduced. This can result in an LED display having a more intense video screen oval because less LED light is absorbed by the diffuser. Rotating the LED chip and reducing the amount of diffuser can also provide an LED chip with a smooth viewing angle light emission pattern.
[0046] In one embodiment having an oval reflective cup and a rectangular LED chip as shown in FIG. 2, rotating the LED chip so that is vertical or orthogonal to the reflective cup' s longitudinal axis allows the longest reflection surface of the reflective cup (wide viewing angle) to be parallel with the shorter emission side of the chip (narrow viewing angle) . It also allows for the shortest reflection surface of the reflective cup (narrow viewing angle) to be parallel with the longer emission side of the chip (wide viewing angle) . This can result in longer wire bonds, which can require closer fabrication focus to provide packages with good reliability. However, this package geometry can provide the advantage of relaxing the match criteria necessary for conventional LED packages between the LED chip far-field pattern, reflective cup and LED dome. It can also reduce the need for large amounts of diffusers. Some embodiments can comprise an oval shaped reflective cup and rectangular LED chip with the LED chip out of alignment with the longitudinal axis of the reflective cup.
[0047] Other embodiments of LED packages according to the present invention can have reflective cups that have different shapes, such as round, square, rectangular, or other polygon shapes. The LED chips used in different packages can have different shapes, such as square, circular, oval, rectangular or other polygon shapes. For example, in another embodiment according to the present invention, the reflective cup can be circular and the LED chips can be square, with the LED chip rotated and an angle to the axis of the reflective cup or the LED package. It is also understood that LED packages according to the present invention can be arranged without reflective cups with the LED chip mounted on a substrate or submount, and other LED packages can comprise LED chip arrays instead of a single LED chip.
[0048] The above embodiments can be described herein with reference to reflective cups with one axis that is longer than its orthogonal axis. The present invention however is equally applicable to embodiments having a package, substrate, submount or lens with one axis that is longer than its orthogonal axis. Stated differently, it is understood that the present invention is applicable to packages, substrates and submounts having a longer and a shorter orthogonal axis or a package having a lens, with the lens having a longer and shorter orthogonal axis. In these embodiments, the LED chip is rotated out of alignment with the longer axis or rotated such that it is out of alignment with both the longer and shorter axis.
[0049] The present invention is described herein with reference to certain embodiments, but it is understood that the invention can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In particular many different LED, reflective cup and lead frame arrangements can be provided beyond those described above, and the encapsulant can provide further features to improve the reliability and emission characteristics from the LED packages and LED displays utilizing the LED packages. Although some of the embodiments are described herein with reference to a reflective cup, it is understood that the present invention is equally applicable to any embodiments having any type of reflective cavity, or no reflective cup. Although the different embodiments of LED packages discussed below are directed to use in LED displays, they can be used in many other applications either individually or with other LED packages having the same or different peak emission tilt.
[0050] It is also understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Furthermore, relative terms such as "above" and "below", and similar terms, may be used herein to describe a relationship of one layer or another region. It is understood that these terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures .
[0051] Although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
[0052] Embodiments of the invention are described herein with reference to cross-sectional view illustrations that are schematic illustrations of embodiments of the invention. As such, the actual thickness of the layers can be different, and variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances are expected. Embodiments of the invention should not be construed as limited to the particular shapes of the regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. A region illustrated or described as square or rectangular will typically have rounded or curved features due to normal manufacturing tolerances. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the invention.
[0053] FIG. 4 shows one embodiment of LED package 50 according to the present invention that generally comprises a reflective cup 54, with an LED chip 56 mounted at the base of the reflective cup 54. In pin mounted embodiments, the LED package can comprise a two-pin lead frame (not shown but similar to those shown in FIG. 1) that can be made of conventional materials using known manufacturing methods. An electrical signal can be applied to the LED 56 through the two pins of the lead frame section, with wire bonds 58a, 58b providing an electrical path between the lead frame and the LED 56 to carry an electrical signal to the LED 56 that causes it to emit light.
[0054] Many different types of LEDs or LED chips ("LED chip" or "LED chips") can be used in the package 50 and fabrication of conventional LED chips is generally known, and is only briefly discussed herein. LED chips can be fabricated using known processes with a suitable process being fabrication using metal organic chemical vapor deposition (MOCVD) . The layers of the LED chips generally comprise an active layer/region sandwiched between first and second oppositely doped epitaxial layers all of which are formed successively on a growth substrate. LED chips can be formed on a wafer and then singulated for mounting in a package. It is understood that the growth substrate can remain as part of the final singulated LED chip or the growth substrate can be fully or partially removed.
[0055] It is also understood that additional layers and elements can also be included in LEDs 56, including but not limited to buffer, nucleation, contact and current spreading layers as well as light extraction layers and elements. The active region can comprise single quantum well (SQW) , multiple quantum well (MQW) , double heterostructure or super lattice structures. The active region and doped layers may be fabricated from different material systems, with preferred material systems being Group-Ill nitride based material systems. Group-Ill nitrides refer to those semiconductor compounds formed between nitrogen and the elements in the Group III of the periodic table, usually aluminum (Al), gallium (Ga) , and indium (In) . The term also refers to ternary and quaternary compounds such as aluminum gallium nitride (AlGaN) and aluminum indium gallium nitride (AlInGaN) . In a preferred embodiment, the doped layers are gallium nitride (GaN) and the active region is InGaN. In alternative embodiments the doped layers may be AlGaN, aluminum gallium arsenide (AlGaAs) or aluminum gallium indium arsenide phosphide (AlGalnAsP) .
[0056] The growth substrate can be made of many materials such as sapphire, silicon carbide, aluminum nitride (A1N) , gallium nitride (GaN) , with a suitable substrate being a 4H polytype of silicon carbide, although other silicon carbide polytypes can also be used including 3C, 6H and 15R polytypes. Silicon carbide has certain advantages, such as a closer crystal lattice match to Group III nitrides than sapphire and results in Group III nitride films of higher quality. Silicon carbide also has a very high thermal conductivity so that the total output power of Group-Ill nitride devices on silicon carbide is not limited by the thermal dissipation of the substrate (as may be the case with some devices formed on sapphire) . SiC substrates are available from Cree Research, Inc., of Durham, North Carolina and methods for producing them are set forth in the scientific literature as well as in a U.S. Patents, Nos. Re. 34,861; 4,946,547; and 5,200,022.
[0057] LED chips can also comprise a conductive current spreading structure and wire bond pads on the top surface, both of which are made of a conductive material that can be deposited using known methods. Some materials that can be used for these elements include Au, Cu, Ni, In, Al, Ag or combinations thereof and conducting oxides and transparent conducting oxides. The current spreading structure can comprise conductive fingers arranged in a grid on LEDs 56 with the fingers spaced to enhance current spreading from the pads into the LED chip's top surface. In operation, an electrical signal is applied to the pads through a wire bond as described below, and the electrical signal spreads through the fingers of the current spreading structure and the top surface into the LED chips. Current spreading structures are often used in LED chips where the top surface is p-type, but can also be used for n-type materials .
[0058] Some or all of the LED chips described herein can be coated with one or more phosphors with the phosphors absorbing at least some of the LED chip light and emitting a different wavelength of light such that the LED chip emits a combination of light from the LED chip and the phosphor. In one embodiment according to the present invention the white emitting LED chips have an LED chip that emits light in the blue wavelength spectrum and the phosphor absorbs some of the blue light and re-emits yellow. The LED chips emit a white light combination of blue and yellow light. In other embodiments, the LED chips emit a non-white light combination of blue and yellow light as described in U.S. Patent No. 7, 213, 940. In some embodiments the phosphor comprises commercially available YAG:Ce, although a full range of broad yellow spectral emission is possible using conversion particles made of phosphors based on the (Gd, Y) 3 (Al , Ga) 5O12 : Ce system, such as the Y3Al50i2:Ce (YAG) . Other yellow phosphors that can be used for white emitting LED chips include:
Tb3-xRExOi2 : Ce (TAG) ; RE=Y, Gd, La, Lu; or Sr2-x-yBaxCaySi04 : Eu .
[0059] The different LED chips can also comprise red, green and blue emitting LEDs can be made of structures and materials that permit emission of the desired light directly from the active region. For example, red light can emit directly from the active region in LEDs made of certain materials such as AlInGaP. Alternatively, in other embodiments the LED chips can be coated with the desired conversion material (e.g. phosphor) that provides the desired emission. For example, red emitting LED chips can comprise LED chips covered by a phosphor that absorbs the LED chip light and emits a red light. The LED chips can emit blue or UV light and some phosphors appropriate for these structures can comprise: Lu203:Eu3+; ( Sr2-xLax) ( Cei_ xEux)04; Sr2-xEuxCe04; SrTi03 : Pr3+, Ga3+; CaAlSiN3 : Eu2+; and Sr2Si5N8:Eu2+.
[0060] The red, green and blue LED chips can be used in separate LED packages and used in LED display pixel as described above. Alternatively, the LED chips can be in packages having multiple of the red, green and blue LED chips. Some of these LED package embodiments can have all of the red, green and blue LED chips, each of which has its own intensity control to allow the package to emit many different color combinations of red, green and blue light.
[0061] Phosphor coated LED chips be coated using many different methods, with one suitable method being described in U.S. Patent Applications Serial Nos. 11/656,759 and 11/899,790, both entitled "Wafer Level Phosphor Coating Method and Devices Fabricated Utilizing Method", and both of which are incorporated herein by reference. Alternatively the LEDs can be coated using other methods such as electrophoretic deposition (EPD) , with a suitable EPD method described in U.S. Patent Application No. 11/473,089 entitled "Close Loop Electrophoretic Deposition of Semiconductor Devices", which is also incorporated herein by reference. It is understood that LED packages according to the present invention can also have multiple LEDs of different colors, one or more of which may be white emitting .
[0062] In the embodiment shown, the reflective cup 54 is oval shaped. That is, when viewing the reflective cup 54 from above, it has a first or longitudinal axis 60 longer than the second axis 62 (i.e. its vertical axis) . As discussed below, the reflective cups according to the present invention can have many different sizes and dimensions. In the embodiment shown, the LED chip 56 is rectangular shaped, and is not mounted in alignment with the first (longitudinal) axis 60 of the reflective cup 54, but is instead mounted in alignment with the second axis 62 of the reflective cup. In this arrangement, the longer sides 64 of the LED 56 are aligned with the shorter sides 66 of the reflective cup 54, and the shorter LED sides 68 are aligned with the longer sides 70 of the reflective cup 54.
[0063] This alignment can provide certain desirable LED package emission characteristics as discussed above and can relax the matching requirements of the LED package components as discussed above. That LED packages according to the present invention can be more tolerant to manufacturing variations that would, by comparison, result in a much greater negative impact on the FFP of conventional LED packages. Such manufacturing variations can include shape of the reflective cup and LED chip, placement of the LED chip in the reflective cup or placement of the wire bonds, and variation in the encapsulant .
[0064] Rotating the LED chip 56 in the reflective cup 54 as shown can also provide improved far field pattern emission characteristics compared to LED packages with horizontal oriented LED chips. FIGs. 5 and 6 show examples of the emission intensity characteristics for an LED package without lenses and having a conventionally oriented LED chip as shown in FIG. 2 above. FIG. 5 shows the horizontal far field pattern (FFP) 80 having a 50% emission intensity 82 at approximately 70 degrees horizontal radiation angle. FIG. 6 shows the vertical FFP 84 having a 50% emission intensity 86 at approximately 58 degrees vertical radiation pattern. By comparison, FIGs. 7 and 8 show examples of emission intensity characteristics for an LED package having a vertical oriented LED chip as shown in FIG. 4, and in the same reflective cup as the LED package providing the emission characteristics shown in FIGs. 5 and 6. FIG. 7 shows the horizontal FFP 88 having a 50% emission intensity 90 at approximately 76 degrees horizontal radiation angle. FIG. 8 shows the vertical FFP 92 having a 50% emission intensity 94 at approximately 65 degrees vertical emission intensity.
[0065] As illustrated by comparison of FIGs. 5 and 6 to FIGs. 7 and 8, the package with the vertical oriented LED chip has a wider viewing angle and 50% intensity in both horizontal and vertical radiation angles. The emission pattern also comprises fewer non-uniformities and has a smoother drop-off in radiation intensity through different emission angles. The differences can be attributed to different factors such as the longer emission surface of the LED chip emitting a greater integrated intensity in the horizontal direction. The increase in the vertical emission intensity can also be attributed to a number of factors, such as the edge of the LED chip being closer to the reflective surface in the vertical direction. It is noted that there can be other differences between the FFP emission for the rotated or vertical LED chip arrangement. One potential difference is that the peak emission intensity for the vertical chip LED packages can be narrower, but the radiation intensity drops off at less of an angle (more slowly at greater angles) .
[0066] FIGs. 9 and 10 show examples of the emission intensity characteristics for a conventional LED package following tin soldering and encapsulation having a conventionally oriented LED chip as shown in FIG. 2 above. FIG. 9 shows the horizontal FFP 100 having a 50% emission intensity 102 at approximately 94 degrees horizontal radiation angle. FIG. 10 shows a vertical FFP 104 having a 50% emission intensity 106 at approximately 44 degrees vertical radiation pattern. These FFPs can be similar LEDs emitting different colors of light, with the FFPs 100 and 104 being for an LED package with a green emitting LED chip. For LED packages with a blue emitting LED chip in a similar reflective cup arrangement, the FFPs and 50% radiation emission intensities would be nearly the same at approximately 95 degrees horizontal and 43 degrees vertical .
[0067] By comparison, FIGs. 11 and 12 show examples of emission intensity characteristics for an LED package according to the present invention having a vertical oriented LED chip as shown in FIG. 4. The LED chip is arranged in the same or similar reflective cup as the LED package providing the emission characteristics shown in FIGs. 9 and 10. FIG. 11 shows the horizontal FFP 108 having a 50% emission intensity 110 at approximately 101 degrees horizontal radiation angle. FIG. 12 shows the vertical FFP 112 having a 50% emission intensity 114 at approximately 48 degrees vertical emission intensity. The emission pattern shown is for LED packages with green emitting LED chips. The emission patterns would be similar for LED packages having LED chips emitting other colors of light. For LED packages with blue emitting LED chip the FFP and 50% radiation emission intensities would be nearly the same at approximately 102 degrees horizontal and 48 degrees vertical .
[0068] By arranging different LED chips in different reflective cups, wider 50% viewing angle emission patterns can be achieved. In some embodiments of LED packages with red, green and blue emitting LED chips, the 50% horizontal emission intensity angle can be up to 120 degrees, while the 50% vertical emission intensity angle can be up to 70 degrees. In one embodiment of packages with green and blue LED chips, the 50% horizontal intensity angle is 115 degrees, and the 50% vertical angle is 65 degrees. In one embodiment of a package with a red LED chip the 50% horizontal intensity angle can be 108 degrees, and the 50% vertical intensity angle can 58 degrees. . In different embodiment shown above, the increase in emission intensity angles can increase in the range of 0 to 5% compared to that of conventional LED packages having horizontal oriented LED chips. In other embodiments the increase can be in the range of 0 to 10%, while in other embodiments the increase can be in the range of 0 to 15%.
[0069] The present invention can be applicable to packages and LED chips having many different shapes and sizes. FIGs. 13 through 15 show one embodiment of an oval shaped reflective cup 120 that can be used in LED packages according to the present invention. Reflective cup 120 has a length and width of approximately 1.26mm by 1.01mm. The reflective cup 120 has a base 122 with a length of approximately .9mm long and .65mm wide, and an angled reflective surface 124 approximately 0.15mm high with an approximate 100 degree opening. FIGs. 16 through 18 show another embodiment of a reflective cup 130 having a shape similar to reflective cup 120. Reflective cup 130 has a base 132 that is the same size of base 122 in reflective cup 120. The angled surface 134, however, has a height of approximately 0.25mm and an approximate 80 degree opening. This results in a package the is 1.32mm long and 1.07mm wide. These are only two examples of the many different shapes and sizes of reflective cups that can be used in LED packages according to the present invention.
[0070] The LED packages can have LED chips with different shapes and sizes, with the rectangular shaped LED chips having a length greater that their width. In some embodiments, the length can be up to ΙΟΟΟμπι and the width can be up to 500μπι. In still other embodiments the length can be up to 500μπι and the width can be up to 300μπι. In one embodiment, the LED chip can have a length of approximately 480μιη and a width of approximately 260μπι.
[0071] The LED packages according to the present invention can be used to form LED displays with the LED displays having an improved far field pattern. The cumulative effect of multiple LEDs according to the present invention, with improved emission characteristics, along with the repeatable manufacturability of the LED packages, results in LED displays exhibiting the same improved emission.
[0072] LED displays can be provided according to the present invention with many different numbers of LED modules or pixels. In some embodiments the LED displays can have between 1 and 100,000 modules or pixels. In other embodiments the LED displays can have between 100,000 and 200,000 modules or pixels, while in other embodiments the LED displays can have between 200,000 and 300,000 modules or pixels. In still other embodiments, the LED displays can have more than 300, 000 pixels or modules. The pixel or modules are arranged in a rectangular grid. For example, a grid can be 640 modules/pixels wide and 480 modules/pixels high, with the end size of the screen being dependent upon the actual size of the modules/pixels. The displays according to the present invention can be many different shapes and sizes with many of these displays being as large as 60 feet tall and 60 feet wide.
[0073] FIG. 19 shows emission intensity curve 140 for the horizontal FFP for one embodiment of an LED display utilizing LED packages according to the present invention. The screen exhibits substantially flat emission intensity characteristics through a range of up to 120 degrees of horizontal viewing angles. This provides improved viewing of the LED display at a greater range of angles, with the LED image having substantially the same intensity at the normal 0° viewing degree as at any viewing angle up to 60° on either side of normal. Accordingly, the image retains its quality at a larger range of angles compared to conventional LED based displays.
[0074] FIG. 20 shows a screen curve 150 for the vertical far field pattern for one embodiment of an LED display utilizing LED packages according to the present invention. The vertical pattern follows more of a Lambertian pattern than the LED packages described above and used in the display not having increased vertical emission angles. It is understood that in other embodiments, some or all of the LED packages can be arranged to have higher vertical viewing angles, with the vertical screen curve exhibiting a flat portion similar to that shown in FIG. 19.
[0075] The LED displays according to the present invention utilizing the LED packages according to the present invention can also exhibit improved emission intensity curve matching within a range of vertical viewing angles. To provide for more consistent image quality at these different viewing angles, the LED display according to the present invention provides for matching screen curves and far field patterns for the red, green and blue LEDs at these angles. Although the intensity of the light may be lower as the viewing angles increase, color quality of the picture is maintained by the emitters having the same emission curves.
[0076] The displays according to the present invention can also comprise different combinations of LED packages. That is, the LED packages in the different displays do not need to all have the same features to increase emission angles. The LED packages according to the present invention can also be used in many different lighting applications beyond LED displays, and in particular those using a small sized high output light sources reguiring increased emission angles. Some of these include, but are not limited to, street lights, architectural lights, home and office lighting, display lighting and backlighting.
[0077] Beyond the increase in emission angles mentioned above, the present invention can also be utilized to compensate for certain undesirable emission characteristics. FFP non-uniformities or asymmetries can be caused by features of the LED package, such as the bond pad asymmetry, bond wire size and location, current spreading finger geometry, etc. An LED chip can also emit an asymmetric FFP. These FFP non-uniformities and asymmetries can be minimal and may be acceptable to the end user. In instances where these are not acceptable, rotation of the LED chip in a reflective cup can also allow for the control to place the imperfection in a most acceptable location in the FFP. End users many want the imperfections in the far- field to be placed in a certain position in the module or fixture to make them more or less apparent. In conventional LED packages, in order to achieve proper location of the far-field asymmetries the packages can comprise special optics, special solder boards, or attaching the package in a rotated orientation. The LED packages according to the present invention can also achieve this selective location of the far field asymmetries by rotating the LED chip in the reflective cup or package.
[0078] As mentioned above, the rectangular LED chip can also be rotated in reflective cups having different shapes other than oval shaped. The LED chips can take many different shapes beyond rectangular, and these differently shaped LEDs can be mounted in reflective cups having many different shapes. In all of these, rotation would result in the FFP asymmetries being in different locations.
[0079] FIG. 21 shows another embodiment of an LED package 200 according to the present invention that is a two pin type package similar to the embodiment shown in FIG. 4. It comprises an LED chip 202 mounted to the base of a reflective cup 204, with wire bonds 206a, 206b connected between the package pins and the LED chip for applying an electrical signal to the LED chip. In this embodiment, however, the LED chip 202 is square and the reflective cup 204 is circular. The reflective cup 204 comprising a first axis 210 that is generally aligned with package pins, and a second axis 212 that is orthogonal to the first axis 210. The LED chip 202 is mounted in the reflective cup 204 off alignment with the first and second axis 210, 212. That is, its lateral edges of the LED chip 202 are not aligned with the first or second axis 210, 212. Instead, the LED chip 202 is at an angle or rotated in relation to both the axis 210, 212. By angling or rotating the LED chip 202 in the reflective cup 204, the FFP asymmetries can be at a different location in the FFP compared to an package with the LED chip aligned with the axis.
[0080] It is understood that the LED chip 202 can be rotated at many different angles within the range of 0 to 90 degrees. In the embodiment shown, the LED chip 202 is rotated at an angle of approximately 45 degrees to the axis 210, 212.
[0081] FIGs. 22 and 23 show another embodiment of a surface mount LED package 220 according to the present invention comprising a substrate 222, a reflective cup 224 mounted to the substrate 222, and a square LED chip 226 (shown in FIG. 23) mounted to the substrate 222 within the reflective cup 224. As discussed above, the LED chip 226 can be many different shapes other than square. The LED package 220 further comprises a lens 227 over the reflective cup 224. The LED package 220 is arranged similar to LED packages available from Cree, Inc., in Durham, North Carolina under the XLamp® XR-E and XLamp® XR-C model designators. The LED package 220 has a first axis 231 running between the package contacts 232a, 232b and a second axis 234 that is orthogonal to the first axis 231. Unlike the similar commercially available LED packages, the LED chip 226 is angled or rotated in the reflective cup so that its edges are not aligned with the first or second axis 231, 234. This can be done to change the location of the FFP asymmetries as discussed above. Like the LED package 200, the LED chip 226 can be arranged at many different angles to the axis 231, 234 in the range of 0 to 90 degrees. In the embodiment shown, the LED chip can be arranged with its edges at an 45 degree angle to the axis 231, 234. [0082] FIGs. 24 and 25 show another embodiment of an LED package 240 according to the present invention comprising a substrate 242 with an LED chip 244 mounted to the substrate 242. A lens 246 can be molded on the substrate 242 in a hemispheric shape over the LED chip 244. The LED package 240 is arranged similar to LED packages available from Cree, Inc., in Durham, North Carolina under the XLamp® XP-E and XLamp® XP-G model designators. The LED package 240 comprises a first axis 248 running between the package contacts 250a, 250b, and a second axis 252 orthogonal to the first axis 248. Like the packages above, the LED chip is angled or rotated with its edges out of alignment with the first and second axis 248, 252. The range or rotation can be 0 to 90 degrees, with the embodiment shown having an LED chip rotated approximately 45 degrees.
[0083] The LED package embodiments discussed above have a single LED chip mounted in reflective cup or mounted to a substrate. It is understood that other LED package embodiments can have more than one LED chip mounted within a reflective cup or on a substrate. All or some of the multiple LED chips in these embodiments can be rotated, and in other embodiment each of the LED chips can have the same angle of rotation or some can have different angles of rotation. The particular angle for each LED chip can be dictated by a number of factors, with one being the particular FFP asymmetries for the particular chip and the desired location for the FFP patter asymmetry.
[0084] FIGs. 26 and 27 show one embodiment of a multiple chip LED package 260 according to the present invention comprising a substrate 262 and a 4-chip LED array 264 (shown in FIG. 27) mounted to the substrate 262. A lens 266 is formed on the substrate 262 over the LED array 264. The LED package 260 is arranged similar to LED packages available from Cree, Inc., in Durham, North Carolina under the XLamp® MC-E model designator. The LED package 260 comprises a first axis 268 running between the first contacts 270a on one side of the substrate 262 and the second contacts 270b on the opposite side. The package 260 also comprises a second axis 272 orthogonal to the first axis 268. In this embodiment, the LED array 264 comprises square LED chips arranged in a square array, but it is understood that the LED chips can have many different shapes and the array can also have many different shapes. The LED array 264 is angled or rotated on the substrate 262 so that the edges of the array is not aligned with either axis 268, 270. Like the rotated LED chips above, the LED array 264 can be rotated at any angle to the axis in the range of 0-90 degrees, with the array shown having an angle of approximately 45 degrees to the axis.
[0085] Although the present invention has been described in detail with reference to certain preferred configurations thereof, other versions are possible. Therefore, the spirit and scope of the invention should not be limited to the versions described above.

Claims

WE CLAIM:
1. A light emitting diode (LED) package, comprising: a reflective cup and an LED chip mounted in said reflective cup, wherein said reflective cup has a first axis and a second axis orthogonal to said first axis, wherein said LED chip is rotated within said reflective cup so that said LED chip is out of alignment with said first axis .
2. The LED package of claim 1, wherein said LED chip is out of alignment with said second axis.
3. The LED package of claim 1, wherein said LED chip has edges, wherein said edges are out of alignment with said first and second axis.
4. The LED package of claim 1, wherein said LED chip is aligned with said second axis.
5. The LED package of claim 1, wherein said reflective cup is oval shaped.
6. The LED package of claim 5, wherein said LED chip is rectangular shaped.
7. The LED package of claim 5, wherein said first axis is said oval shaped reflector cup's longitudinal axis, said LED chip aligned with said second axis.
8. The LED package of claim 1, wherein said reflective cup is circular.
9. The LED package of claim 1, wherein said LED chip is out of alignment with said first axis at an angle between 0 and 90 degrees.
10. The LED package of claim 1, wherein said LED chip is out of alignment with said first axis at an angle of approximately 45 degrees.
11. The LED package of claim 1, wherein said LED chip is part of an array of LED chips.
12. The LED package of claim 1, emitting a far-field pattern having a 50% emission intensity angle that is wider than the same LED package wherein said LED chip is aligned with said first axis.
13. The LED package of claim 1, further comprising a lens over said LED chip.
14. The package of claim 1, further comprising a substrate with said LED chip and said reflective cup mounted on said substrate.
15. An light emitting diode (LED) package, comprising: a substrate and an LED chip mounted on said substrate, wherein said substrate has a first longitudinal axis, and wherein said LED chip is mounted on said substrate so that said LED chip is out of alignment with said first axis.
16. The LED package of claim 15, further comprising a lens over said LED chip.
17. The LED package of claim 16, wherein said first axis runs between the contacts on said substrate.
18. The LED package of claim 15, further comprising a second axis that is orthogonal to said first axis wherein said LED chip is out of alignment with said second axis.
19. The LED package of claim 18, wherein said LED chip is aligned with said second axis.
20. The LED package of claim 18, wherein said LED chip is out of alignment with said first axis at an angle between 0 and 90 degrees.
21. The LED package of claim 18, wherein said LED chip is out of alignment with said first axis at an angle of approximately 45 degrees.
22. The LED package of claim 18, wherein said LED chip is part of an array of LED chips .
23. The LED package of claim 18, emitting a far-field pattern having a 50% emission intensity angle that is wider than the same LED package wherein said LED chip is aligned with said first axis.
24. The LED package of claim 15, further comprising a reflective cup on said substrate.
25. An light emitting diode (LED) package, comprising: a rectangular LED chip having a chip longitudinal axis; and an oval shaped reflective cup having a cup longitudinal axis, said LED chip mounted within said reflective cup with said chip longitudinal axis angled from said cup longitudinal axis.
26. The LED package of claim 25, wherein said chip longitudinal axis is orthogonal to said cup longitudinal axis .
27. The LED package of claim 25, wherein said LED chip is part of an array of LED chips.
28. The LED package of claim 25, emitting a far-field pattern having a 50% emission intensity angle that is wider than the same LED package wherein said chip longitudinal axis is aligned with said cup longitudinal.
29. The LED package of claim 25, further comprising a lens over said LED chip.
30. The package of claim 25, further comprising a substrate with said LED chip and said reflective cup mounted on said substrate.
31. A light emitting diode (LED) display, comprising: a plurality of LED packages, at least some of which have an LED chip mounted in a reflective cup, said package having a first axis that is orthogonal to a second axis, said LED chip mounted out of alignment with said first axis .
32. The display of claim 31, wherein said LED chip is out of alignment with said second axis.
33. The display of claim 31, wherein said LED chip has edges, wherein said edges are out of alignment with said first and second axis.
34. The display of claim 31, wherein said LED chip is aligned with said second axis.
35. The display of claim 31, wherein each said reflective cup is oval shaped.
36. The display of claim 35, wherein each said LED chip is rectangular shaped.
37. The display of claim 35, wherein said first axis is said oval shaped reflector cup's longitudinal axis, said LED chip aligned with said second axis.
38. The display of claim 31, wherein said reflective cup is circular.
39. The display of claim 31, wherein each said LED chip is out of alignment with said first axis at an angle between 0 and 90 degrees.
40. The display of claim 31, wherein each said LED chip is out of alignment with said first axis at an angle of approximately 45 degrees.
41. The display of claim 31, wherein each said each said LED chip is part of an array of LED chips.
42. The display of claim 31, wherein each LED package emits a far-field pattern having a 50% emission intensity angle that is wider than the same LED package wherein said LED chip is aligned with said first axis.
43. The display of claim 31, further comprising a substrate with said LED chip and said reflective cup mounted on said substrate.
44. An emitter, comprising; an LED chip mounted within a package, wherein said LED chip has a chip long axis and said package has a package long axis, wherein the said chip long axis is oriented differently than said package long axis.
45. A light emitting diode (LED) package, comprising: an LED chip on a submount or a reflective cup; and a lens over said LED, wherein said lens a first axis and a second axis orthogonal to said first axis, wherein said LED chip is on said submount or reflective with said LED chip out of alignment with said first axis.
46. The LED package of claim 45, wherein said LED chip is also out of alignment with said second axis.
PCT/US2011/001457 2010-08-25 2011-08-18 Emitter package with angled or vertical led WO2012026966A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201180051188.7A CN103180976B (en) 2010-08-25 2011-08-18 There is the emitter package of angled or vertical LED

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/868,567 2010-08-25
US12/868,567 US8748915B2 (en) 2006-04-24 2010-08-25 Emitter package with angled or vertical LED

Publications (1)

Publication Number Publication Date
WO2012026966A1 true WO2012026966A1 (en) 2012-03-01

Family

ID=44773124

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/001457 WO2012026966A1 (en) 2010-08-25 2011-08-18 Emitter package with angled or vertical led

Country Status (4)

Country Link
US (1) US8748915B2 (en)
CN (1) CN103180976B (en)
TW (1) TWI580076B (en)
WO (1) WO2012026966A1 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9780268B2 (en) 2006-04-04 2017-10-03 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
USD738832S1 (en) * 2006-04-04 2015-09-15 Cree, Inc. Light emitting diode (LED) package
US11210971B2 (en) 2009-07-06 2021-12-28 Cree Huizhou Solid State Lighting Company Limited Light emitting diode display with tilted peak emission pattern
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
JP5633695B2 (en) * 2010-11-29 2014-12-03 ソニー株式会社 Illumination device, projection display device, and direct view display device
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
TWI523269B (en) 2012-03-30 2016-02-21 晶元光電股份有限公司 Light-emitting device
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
TWI626395B (en) 2013-06-11 2018-06-11 晶元光電股份有限公司 Light emitting device
KR20150019828A (en) * 2013-08-16 2015-02-25 삼성전자주식회사 Light emitting device package and method of manufacturing the same
KR102154061B1 (en) * 2014-02-05 2020-09-09 엘지이노텍 주식회사 Light emitting device package and lighting apparatus including the same
JP6634447B2 (en) * 2014-10-27 2020-01-22 ルミレッズ ホールディング ベーフェー Directional light emitting device and method of manufacturing the same
USD826871S1 (en) * 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
USD793618S1 (en) 2015-12-24 2017-08-01 Semicon Light Co., Ltd. Mold for packaging semiconductor light emitting device
USD793001S1 (en) 2015-12-24 2017-07-25 Semicon Light Co., Ltd. Mold for packaging semiconductor light emitting device
USD793002S1 (en) 2015-12-24 2017-07-25 Semicon Light Co., Ltd. Mold for packaging semiconductor light emitting device
USD795492S1 (en) 2015-12-24 2017-08-22 Semicon Light Co., Ltd. Mold for packaging semiconductor light emitting device
JP1566954S (en) * 2016-04-28 2017-01-16
USD830200S1 (en) 2016-05-11 2018-10-09 Semicon Light Co., Ltd. Housing for packaging semiconductor light emitting device
DE112017003086T5 (en) * 2016-06-21 2019-03-14 Soraa, Inc. LED Package
CN106384777A (en) * 2016-12-07 2017-02-08 惠州雷曼光电科技有限公司 LED (light emitting diode) encapsulation device and LED display device
US20200098957A1 (en) * 2017-01-18 2020-03-26 Cree Huizhou Solid State Lighting Company Ltd. Multiple led light source lens design in an integrated package
JP1588923S (en) * 2017-03-15 2017-10-23
EP3545561B1 (en) 2017-08-25 2022-10-26 Cree Huizhou Solid State Lighting Company Ltd. Multiple led light source integrated package

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
USRE34861E (en) 1987-10-26 1995-02-14 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH1154802A (en) * 1997-07-30 1999-02-26 Matsushita Electric Ind Co Ltd Light-emitting diode and display unit manufactured using the same
JP2000223751A (en) * 1998-11-25 2000-08-11 Nichia Chem Ind Ltd Led lamp and display device using the led lamp
EP1418630A1 (en) * 2002-11-07 2004-05-12 Matsushita Electric Industrial Co., Ltd. LED lamp
EP1538680A2 (en) * 2003-12-03 2005-06-08 Sumitomo Electric Industries, Ltd. Light emitting device
US7213940B1 (en) 2005-12-21 2007-05-08 Led Lighting Fixtures, Inc. Lighting device and lighting method
WO2007127029A2 (en) * 2006-04-24 2007-11-08 Cree, Inc. Side-view surface mount white led
EP1953834A1 (en) * 2005-11-21 2008-08-06 Matsushita Electric Works, Ltd. Light-emitting device
GB2458972A (en) * 2008-08-05 2009-10-07 Photonstar Led Ltd Thermally optimized chip-on-board module

Family Cites Families (245)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US303315A (en) * 1884-08-12 Flying target-ball
US244965A (en) * 1881-07-26 Medical compound
US429757A (en) * 1890-06-10 Paper-carriage for type-writing machines
US622795A (en) * 1899-04-11 Time-recorder
US217414A (en) * 1879-07-08 Improvement in fire-kindlers
US376902A (en) * 1888-01-24 Dumping wagon
US42048A (en) * 1864-03-22 Improvement in self-acting mules
US621210A (en) * 1899-03-14 Ralph bostock and frank arthur cheetiiam
US66626A (en) * 1867-07-09 Adrian rais
US187009A (en) * 1877-02-06 Improvement in pumps
US692206A (en) * 1901-04-06 1902-01-28 Frank Lincoln Lumbert Cask-handling device.
US707069A (en) * 1902-05-03 1902-08-19 John C Allen Glove.
US759733A (en) * 1903-06-01 1904-05-10 De Haven Morris Tool.
US3760237A (en) 1972-06-21 1973-09-18 Gen Electric Solid state lamp assembly having conical light director
JPS5939839Y2 (en) 1977-02-28 1984-11-08 株式会社三協精機製作所 DC motor speed control circuit
JPS53126570U (en) 1977-03-15 1978-10-07
FR2436505A1 (en) 1978-09-12 1980-04-11 Radiotechnique Compelec OPTOELECTRONIC DEVICE WITH COUPLED TRANSMITTER AND RECEIVER
JPS604991B2 (en) 1979-05-11 1985-02-07 株式会社東芝 display device
US4511425A (en) 1983-06-13 1985-04-16 Dennison Manufacturing Company Heated pad decorator
JPH0416467Y2 (en) 1986-03-31 1992-04-13
EP0400176B1 (en) 1989-05-31 2000-07-26 Osram Opto Semiconductors GmbH & Co. OHG Method to mount a surface-mountable optical element
US5042048A (en) 1990-03-02 1991-08-20 Meyer Brad E Target illuminators and systems employing same
US5167556A (en) 1990-07-03 1992-12-01 Siemens Aktiengesellschaft Method for manufacturing a light emitting diode display means
US5130761A (en) 1990-07-17 1992-07-14 Kabushiki Kaisha Toshiba Led array with reflector and printed circuit board
US5122943A (en) * 1991-04-15 1992-06-16 Miles Inc. Encapsulated light emitting diode and method for encapsulation
US5351106A (en) * 1991-07-01 1994-09-27 Amergraph Corporation Exposure system
AU4782293A (en) * 1992-07-24 1994-02-14 Tessera, Inc. Semiconductor connection components and methods with releasable lead support
US5790298A (en) 1994-05-03 1998-08-04 Gentex Corporation Method of forming optically transparent seal and seal formed by said method
DE4446566A1 (en) * 1994-12-24 1996-06-27 Telefunken Microelectron Multipole, surface-mountable, electronic component
EP0775369B1 (en) 1995-05-10 2001-10-10 Koninklijke Philips Electronics N.V. Miniature semiconductor device for surface mounting
DE19549818B4 (en) 1995-09-29 2010-03-18 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device
EP0897347B1 (en) * 1996-03-19 2002-01-23 Donnelly Mirrors Limited Electro-optic rearview mirror system
US6600175B1 (en) * 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
DE19621124A1 (en) * 1996-05-24 1997-11-27 Siemens Ag Optoelectronic converter and its manufacturing process
JPH09321343A (en) 1996-05-31 1997-12-12 Dowa Mining Co Ltd Component device for optical communication
DE19638667C2 (en) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
JP3741512B2 (en) * 1997-04-14 2006-02-01 ローム株式会社 LED chip parts
US5813753A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
EP1004145B1 (en) 1997-07-29 2005-06-01 Osram Opto Semiconductors GmbH Optoelectronic component
US6183100B1 (en) 1997-10-17 2001-02-06 Truck-Lite Co., Inc. Light emitting diode 360° warning lamp
DE19755734A1 (en) 1997-12-15 1999-06-24 Siemens Ag Method for producing a surface-mountable optoelectronic component
DE19829197C2 (en) * 1998-06-30 2002-06-20 Siemens Ag Component emitting and / or receiving radiation
US7253445B2 (en) * 1998-07-28 2007-08-07 Paul Heremans High-efficiency radiating device
US5959316A (en) 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
JP3334864B2 (en) 1998-11-19 2002-10-15 松下電器産業株式会社 Electronic equipment
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP4279388B2 (en) 1999-01-29 2009-06-17 日亜化学工業株式会社 Optical semiconductor device and method for forming the same
JP3349109B2 (en) 1999-03-04 2002-11-20 株式会社シチズン電子 Surface mount type light emitting diode and method of manufacturing the same
US6259608B1 (en) * 1999-04-05 2001-07-10 Delphi Technologies, Inc. Conductor pattern for surface mount devices and method therefor
JP2001042792A (en) * 1999-05-24 2001-02-16 Sony Corp Led display device
JP2001044506A (en) 1999-07-26 2001-02-16 Ichikoh Ind Ltd Fixation structure for light emitting diode
US6454437B1 (en) 1999-07-28 2002-09-24 William Kelly Ring lighting
US6710373B2 (en) * 1999-09-27 2004-03-23 Shih-Yi Wang Means for mounting photoelectric sensing elements, light emitting diodes, or the like
US6296367B1 (en) * 1999-10-15 2001-10-02 Armament Systems And Procedures, Inc. Rechargeable flashlight with step-up voltage converter and recharger therefor
DE19963806C2 (en) 1999-12-30 2002-02-07 Osram Opto Semiconductors Gmbh Process for producing a light-emitting diode white light source, use of a plastic molding compound for producing a light-emitting diode white light source and surface-mountable light-emitting diode white light source
DE10002521A1 (en) 2000-01-21 2001-08-09 Infineon Technologies Ag Electro-optical data transmission module
WO2001059851A1 (en) 2000-02-09 2001-08-16 Nippon Leiz Corporation Light source
US6224216B1 (en) * 2000-02-18 2001-05-01 Infocus Corporation System and method employing LED light sources for a projection display
JP3729012B2 (en) 2000-02-24 2005-12-21 松下電工株式会社 LED module
US6517218B2 (en) * 2000-03-31 2003-02-11 Relume Corporation LED integrated heat sink
KR100772774B1 (en) * 2000-04-24 2007-11-01 로무 가부시키가이샤 Edge-emitting light-emitting semiconductor device and method of manufacture thereof
US20020066905A1 (en) 2000-06-20 2002-06-06 Bily Wang Wing-shaped surface mount package for light emitting diodes
JP4431756B2 (en) 2000-06-23 2010-03-17 富士電機システムズ株式会社 Resin-sealed semiconductor device
JP2002033058A (en) 2000-07-14 2002-01-31 Sony Corp Front plate for field emission type display device
US7129638B2 (en) 2000-08-09 2006-10-31 Avago Technologies General Ip (Singapore) Pte. Ltd. Light emitting devices with a phosphor coating having evenly dispersed phosphor particles and constant thickness
DE10041328B4 (en) 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Packaging unit for semiconductor chips
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
EP1187226B1 (en) 2000-09-01 2012-12-26 Citizen Electronics Co., Ltd. Surface-mount type light emitting diode and method of manufacturing same
US7064355B2 (en) 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6940704B2 (en) * 2001-01-24 2005-09-06 Gelcore, Llc Semiconductor light emitting device
JP3659635B2 (en) 2001-04-10 2005-06-15 株式会社東芝 Optical semiconductor device
IE20020300A1 (en) 2001-04-23 2003-03-19 Plasma Ireland Ltd An Illuminator
US20020163001A1 (en) 2001-05-04 2002-11-07 Shaddock David Mulford Surface mount light emitting device package and fabrication method
JP2002344029A (en) 2001-05-17 2002-11-29 Rohm Co Ltd Method of adjusting color tone of light-emitting diode
JP3844196B2 (en) 2001-06-12 2006-11-08 シチズン電子株式会社 Manufacturing method of light emitting diode
JP2002374007A (en) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd Light-emitting apparatus
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
US6700136B2 (en) * 2001-07-30 2004-03-02 General Electric Company Light emitting device package
CN2498694Y (en) 2001-08-14 2002-07-03 北京利亚德电子科技有限公司 Inclined LED image module
US6812481B2 (en) * 2001-09-03 2004-11-02 Toyoda Gosei Co., Ltd. LED device and manufacturing method thereof
EP1437776B1 (en) * 2001-10-12 2011-09-21 Nichia Corporation Light emitting device and method for manufacture thereof
US7009627B2 (en) * 2001-11-21 2006-03-07 Canon Kabushiki Kaisha Display apparatus, and image signal processing apparatus and drive control apparatus for the same
DE10241989A1 (en) 2001-11-30 2003-06-18 Osram Opto Semiconductors Gmbh Optoelectronic component
JP4009097B2 (en) * 2001-12-07 2007-11-14 日立電線株式会社 LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND LEAD FRAME USED FOR MANUFACTURING LIGHT EMITTING DEVICE
KR100439402B1 (en) 2001-12-24 2004-07-09 삼성전기주식회사 Light emission diode package
US6480389B1 (en) * 2002-01-04 2002-11-12 Opto Tech Corporation Heat dissipation structure for solid-state light emitting device package
JP3973082B2 (en) * 2002-01-31 2007-09-05 シチズン電子株式会社 Double-sided LED package
US6924514B2 (en) 2002-02-19 2005-08-02 Nichia Corporation Light-emitting device and process for producing thereof
JP2003258305A (en) * 2002-02-27 2003-09-12 Oki Degital Imaging:Kk Semiconductor element array
CN100524703C (en) 2002-03-08 2009-08-05 罗姆股份有限公司 Semiconductor device using semiconductor chip
JP3939177B2 (en) 2002-03-20 2007-07-04 シャープ株式会社 Method for manufacturing light emitting device
JP2003324214A (en) 2002-04-30 2003-11-14 Omron Corp Light emitting module
JP3707688B2 (en) 2002-05-31 2005-10-19 スタンレー電気株式会社 Light emitting device and manufacturing method thereof
JP4002476B2 (en) 2002-06-18 2007-10-31 ローム株式会社 Semiconductor device
WO2004001862A1 (en) 2002-06-19 2003-12-31 Sanken Electric Co., Ltd. Semiconductor light emitting device, method for producing the same and reflector for semiconductor light emitting device
TW546799B (en) 2002-06-26 2003-08-11 Lingsen Precision Ind Ltd Packaged formation method of LED and product structure
DE10229067B4 (en) 2002-06-28 2007-08-16 Osram Opto Semiconductors Gmbh Optoelectronic component and method for its production
NO317228B1 (en) 2002-07-01 2004-09-20 Bard Eker Ind Design As projector
JP2004047748A (en) * 2002-07-12 2004-02-12 Stanley Electric Co Ltd Light-emitting diode
JP4118742B2 (en) * 2002-07-17 2008-07-16 シャープ株式会社 Light emitting diode lamp and light emitting diode display device
WO2004038759A2 (en) 2002-08-23 2004-05-06 Dahm Jonathan S Method and apparatus for using light emitting diodes
JP4407204B2 (en) 2002-08-30 2010-02-03 日亜化学工業株式会社 Light emitting device
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US7244965B2 (en) * 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
US7264378B2 (en) 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
JP2004103775A (en) 2002-09-09 2004-04-02 Eeshikku Kk Chip led light emitting body and method for manufacturing the same
DE10243247A1 (en) 2002-09-17 2004-04-01 Osram Opto Semiconductors Gmbh Leadframe-based component housing, leadframe tape, surface-mountable electronic component and method of manufacture
JP2004146815A (en) 2002-09-30 2004-05-20 Sanyo Electric Co Ltd Light emitting device
US6686609B1 (en) * 2002-10-01 2004-02-03 Ultrastar Limited Package structure of surface mounting led and method of manufacturing the same
US6717353B1 (en) 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
DE10255932A1 (en) 2002-11-29 2004-06-17 Osram Opto Semiconductors Gmbh Optoelectronic component
US7692206B2 (en) 2002-12-06 2010-04-06 Cree, Inc. Composite leadframe LED package and method of making the same
JP4633333B2 (en) 2003-01-23 2011-02-16 株式会社光波 Light emitting device
CN2617039Y (en) 2003-02-21 2004-05-19 游尚桦 Sticking LED lead frame
EP1597764A1 (en) 2003-02-28 2005-11-23 Osram Opto Semiconductors GmbH Optoelectronic component comprising a housing body which is metallised in a structured manner, method for producing one such component, and method for the structured metallisation of a body containing plastic
USD517025S1 (en) * 2003-03-17 2006-03-14 Nichia Corporation Light emitting diode
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
JP4504662B2 (en) * 2003-04-09 2010-07-14 シチズン電子株式会社 LED lamp
KR101148332B1 (en) 2003-04-30 2012-05-25 크리, 인코포레이티드 High powered light emitter packages with compact optics
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
JP4341951B2 (en) 2003-05-07 2009-10-14 シチズン電子株式会社 Light emitting diode and its package structure
JP2004335880A (en) 2003-05-09 2004-11-25 Toshiba Lighting & Technology Corp Light emitting device
US7021797B2 (en) * 2003-05-13 2006-04-04 Light Prescriptions Innovators, Llc Optical device for repositioning and redistributing an LED's light
JP4030463B2 (en) 2003-05-20 2008-01-09 三洋電機株式会社 LED light source and manufacturing method thereof
JP2004356506A (en) * 2003-05-30 2004-12-16 Stanley Electric Co Ltd Glass sealed type light emitting diode
JP3977774B2 (en) 2003-06-03 2007-09-19 ローム株式会社 Optical semiconductor device
JP4120813B2 (en) * 2003-06-12 2008-07-16 セイコーエプソン株式会社 Optical component and manufacturing method thereof
JP4645071B2 (en) 2003-06-20 2011-03-09 日亜化学工業株式会社 Package molded body and semiconductor device using the same
JP4034241B2 (en) 2003-06-27 2008-01-16 日本ライツ株式会社 LIGHT SOURCE DEVICE AND LIGHT SOURCE DEVICE MANUFACTURING METHOD
TWI312582B (en) * 2003-07-24 2009-07-21 Epistar Corporatio Led device, flip-chip led package and light reflecting structure
JP4360858B2 (en) 2003-07-29 2009-11-11 シチズン電子株式会社 Surface mount type LED and light emitting device using the same
US6876008B2 (en) 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
JP2005064047A (en) 2003-08-13 2005-03-10 Citizen Electronics Co Ltd Light emitting diode
US6995402B2 (en) 2003-10-03 2006-02-07 Lumileds Lighting, U.S., Llc Integrated reflector cup for a light emitting device mount
US20050077535A1 (en) 2003-10-08 2005-04-14 Joinscan Electronics Co., Ltd LED and its manufacturing process
CN2646873Y (en) 2003-10-16 2004-10-06 上海三思科技发展有限公司 A surface sticking type LED with tilted light axis
TWI291770B (en) 2003-11-14 2007-12-21 Hon Hai Prec Ind Co Ltd Surface light source device and light emitting diode
JP4231391B2 (en) 2003-11-19 2009-02-25 パナソニック株式会社 Lead frame for semiconductor device and surface light emitting device using the same
JP2005183531A (en) * 2003-12-17 2005-07-07 Sharp Corp Semiconductor light emitting device
JP4442216B2 (en) 2003-12-19 2010-03-31 豊田合成株式会社 LED lamp device
US7321161B2 (en) * 2003-12-19 2008-01-22 Philips Lumileds Lighting Company, Llc LED package assembly with datum reference feature
US7675231B2 (en) 2004-02-13 2010-03-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emitting diode display device comprising a high temperature resistant overlay
US20050179041A1 (en) 2004-02-18 2005-08-18 Lumileds Lighting U.S., Llc Illumination system with LEDs
US20050199899A1 (en) * 2004-03-11 2005-09-15 Ming-Der Lin Package array and package unit of flip chip LED
JP2005310756A (en) * 2004-03-26 2005-11-04 Koito Mfg Co Ltd Light source module and vehicular headlight
US7514867B2 (en) * 2004-04-19 2009-04-07 Panasonic Corporation LED lamp provided with optical diffusion layer having increased thickness and method of manufacturing thereof
JP2005347401A (en) 2004-06-01 2005-12-15 Meiko:Kk Optical element chip component
TWM258416U (en) 2004-06-04 2005-03-01 Lite On Technology Corp Power LED package module
JPWO2006001352A1 (en) 2004-06-25 2008-07-31 三洋電機株式会社 Light emitting element
JP2006019557A (en) 2004-07-02 2006-01-19 Fujikura Ltd Light emitting device, its mounting method, lighting apparatus and display
JP4571139B2 (en) 2004-08-10 2010-10-27 ルネサスエレクトロニクス株式会社 Light emitting device and method for manufacturing light emitting device
JP4547569B2 (en) 2004-08-31 2010-09-22 スタンレー電気株式会社 Surface mount type LED
JP4747726B2 (en) * 2004-09-09 2011-08-17 豊田合成株式会社 Light emitting device
WO2006059828A1 (en) 2004-09-10 2006-06-08 Seoul Semiconductor Co., Ltd. Light emitting diode package having multiple molding resins
JP2006108517A (en) 2004-10-08 2006-04-20 Citizen Watch Co Ltd Substrate for led connection, illuminator using thereof, and display device using thereof
JP2006114854A (en) * 2004-10-18 2006-04-27 Sharp Corp Semiconductor light emitting device, and backlight device for liquid crystal display
KR101080355B1 (en) 2004-10-18 2011-11-04 삼성전자주식회사 Light emitting diode, lens for the same
US8816369B2 (en) * 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
JP4796293B2 (en) * 2004-11-04 2011-10-19 株式会社 日立ディスプレイズ Manufacturing method of lighting device
US7303315B2 (en) 2004-11-05 2007-12-04 3M Innovative Properties Company Illumination assembly using circuitized strips
JP2006140281A (en) 2004-11-11 2006-06-01 Stanley Electric Co Ltd Power led and its manufacturing method
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
GB2420221B (en) 2004-11-12 2009-09-09 Unity Opto Technology Co Ltd Solid-state semiconductor light emitting device
US7119422B2 (en) * 2004-11-15 2006-10-10 Unity Opto Technology Co., Ltd. Solid-state semiconductor light emitting device
JP5038147B2 (en) 2004-11-18 2012-10-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Luminescent body and method for producing the luminous body
WO2006065007A1 (en) 2004-12-16 2006-06-22 Seoul Semiconductor Co., Ltd. Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method
JP4902114B2 (en) * 2004-12-16 2012-03-21 日亜化学工業株式会社 Light emitting device
US7285802B2 (en) 2004-12-21 2007-10-23 3M Innovative Properties Company Illumination assembly and method of making same
CN100389503C (en) 2005-01-07 2008-05-21 北京大学 Method for preparing LED chip with separate crystal grain vertical structure
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
TWI255566B (en) 2005-03-04 2006-05-21 Jemitek Electronics Corp Led
JP4915052B2 (en) 2005-04-01 2012-04-11 パナソニック株式会社 LED component and manufacturing method thereof
US7994702B2 (en) 2005-04-27 2011-08-09 Prysm, Inc. Scanning beams displays based on light-emitting screens having phosphors
CN1874011A (en) 2005-06-03 2006-12-06 邢陈震仑 LED device
JP4064412B2 (en) 2005-06-07 2008-03-19 株式会社フジクラ Light emitting element mounting substrate and light emitting element module
US9412926B2 (en) 2005-06-10 2016-08-09 Cree, Inc. High power solid-state lamp
US8669572B2 (en) * 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
JP2007012323A (en) 2005-06-28 2007-01-18 Cheil Ind Co Ltd Surface light source device, and liquid crystal display device
KR20080027355A (en) * 2005-06-30 2008-03-26 마츠시다 덴코 가부시키가이샤 Light emitting device
KR100757196B1 (en) 2005-08-01 2007-09-07 서울반도체 주식회사 Light emitting device with a lens of silicone
US20070034886A1 (en) 2005-08-11 2007-02-15 Wong Boon S PLCC package with integrated lens and method for making the package
JP3948488B2 (en) 2005-09-09 2007-07-25 松下電工株式会社 Light emitting device
US20070096139A1 (en) 2005-11-02 2007-05-03 3M Innovative Properties Company Light emitting diode encapsulation shape control
JP4724618B2 (en) 2005-11-11 2011-07-13 株式会社 日立ディスプレイズ LIGHTING DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME
JP2007184542A (en) 2005-12-09 2007-07-19 Matsushita Electric Ind Co Ltd Light-emitting module, manufacturing method thereof, and backlight apparatus using same
JP2007201420A (en) 2005-12-27 2007-08-09 Sharp Corp Semiconductor light-emitting device, semiconductor light-emitting element, and method of manufacturing semiconductor light-emitting device
JP2007189150A (en) 2006-01-16 2007-07-26 Enomoto Co Ltd Lead frame for low-height led device and method for manufacturing same
JP2009087538A (en) 2006-01-20 2009-04-23 Sharp Corp Light source unit, lighting device using it, and display device using it
US20070170449A1 (en) 2006-01-24 2007-07-26 Munisamy Anandan Color sensor integrated light emitting diode for LED backlight
USD572670S1 (en) 2006-03-30 2008-07-08 Nichia Corporation Light emitting diode
KR20090005194A (en) 2006-04-18 2009-01-12 라미나 라이팅, 인크. Optical devices for controlled color mixing
US7635915B2 (en) 2006-04-26 2009-12-22 Cree Hong Kong Limited Apparatus and method for use in mounting electronic elements
JP4830768B2 (en) 2006-05-10 2011-12-07 日亜化学工業株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
US20070269586A1 (en) 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
JP5119610B2 (en) 2006-05-26 2013-01-16 日亜化学工業株式会社 Light emitting diode
KR100789951B1 (en) 2006-06-09 2008-01-03 엘지전자 주식회사 Apparatus and method for manufacturing Light Emitting Unit
KR100904152B1 (en) 2006-06-30 2009-06-25 서울반도체 주식회사 Leadframe having a heat sink supporting part, fabricating method of the light emitting diode package using the same and light emitting diode package fabricated by the method
TWM303325U (en) 2006-07-13 2006-12-21 Everlight Electronics Co Ltd Light emitting diode package
US7960819B2 (en) 2006-07-13 2011-06-14 Cree, Inc. Leadframe-based packages for solid state emitting devices
US7804147B2 (en) * 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
USD591697S1 (en) * 2006-08-09 2009-05-05 Cree, Inc. Lamp package
JP5564162B2 (en) * 2006-09-29 2014-07-30 フューチャー ライト リミテッド ライアビリティ カンパニー Light emitting diode device
TWI313943B (en) 2006-10-24 2009-08-21 Chipmos Technologies Inc Light emitting chip package and manufacturing thereof
USD572210S1 (en) 2006-11-01 2008-07-01 Lg Innotek Co., Ltd. Light-emitting diode (LED)
KR101329413B1 (en) 2006-12-19 2013-11-14 엘지디스플레이 주식회사 Optical lens, optical module having the optical lens and backlight unit having the optical module
US7687823B2 (en) * 2006-12-26 2010-03-30 Nichia Corporation Light-emitting apparatus and method of producing the same
CN101507004B (en) 2006-12-28 2011-04-20 日亚化学工业株式会社 Light emitting device, package, light emitting device manufacturing method, package manufacturing method and package manufacturing die
KR100788265B1 (en) 2006-12-28 2007-12-27 서울반도체 주식회사 Light emitting diode package having a plurality of vertical light emitting device
EP2109157B1 (en) 2006-12-28 2018-11-28 Nichia Corporation Light emitting device and method for manufacturing the same
US7800304B2 (en) * 2007-01-12 2010-09-21 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Multi-chip packaged LED light source
JP5106862B2 (en) * 2007-01-15 2012-12-26 昭和電工株式会社 Light emitting diode package
CN100550374C (en) 2007-01-30 2009-10-14 深圳市联众达光电有限公司 LED encapsulating structure and method for packing
US7777412B2 (en) * 2007-03-22 2010-08-17 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Phosphor converted LED with improved uniformity and having lower phosphor requirements
JP4689637B2 (en) * 2007-03-23 2011-05-25 シャープ株式会社 Semiconductor light emitting device
US7622795B2 (en) 2007-05-15 2009-11-24 Nichepac Technology Inc. Light emitting diode package
US7923831B2 (en) 2007-05-31 2011-04-12 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED-based light source having improved thermal dissipation
DE202007012162U1 (en) 2007-06-05 2008-03-20 Seoul Semiconductor Co., Ltd. LED housing
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
JP4107349B2 (en) 2007-06-20 2008-06-25 ソニー株式会社 Light source device, display device
USD576574S1 (en) 2007-07-17 2008-09-09 Rohm Co., Ltd. Light emitting diode module
CN100574543C (en) 2007-07-30 2009-12-23 深圳莱特光电有限公司 The method of isolating silver layer in a kind of warm white LED encapsulation process
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US7968899B2 (en) * 2007-08-27 2011-06-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED light source having improved resistance to thermal cycling
DE102007041136A1 (en) * 2007-08-30 2009-03-05 Osram Opto Semiconductors Gmbh LED housing
US7791093B2 (en) 2007-09-04 2010-09-07 Koninklijke Philips Electronics N.V. LED with particles in encapsulant for increased light extraction and non-yellow off-state color
CN101388161A (en) * 2007-09-14 2009-03-18 科锐香港有限公司 LED surface mounting device and LED display with the device
JP2007329516A (en) 2007-09-14 2007-12-20 Sharp Corp Semiconductor light-emitting apparatus
US9012937B2 (en) * 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
US7524087B1 (en) * 2007-11-16 2009-04-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Optical device
EP2223352B8 (en) 2007-12-11 2018-08-29 Lumileds Holding B.V. Side emitting device with hybrid top reflector
US8049230B2 (en) 2008-05-16 2011-11-01 Cree Huizhou Opto Limited Apparatus and system for miniature surface mount devices
EP2310175A1 (en) 2008-06-15 2011-04-20 Renevu Ltd. A method for manufacturing a lens to be added to a led, and a lens obtained with that method
JP5284006B2 (en) 2008-08-25 2013-09-11 シチズン電子株式会社 Light emitting device
US9425172B2 (en) * 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
USD598579S1 (en) * 2008-11-20 2009-08-18 Electronic Controls Company LED lighting assembly
USD593224S1 (en) * 2008-11-20 2009-05-26 Electronic Controls Company LED lighting assembly
GB2466633A (en) 2008-12-12 2010-07-07 Glory Science Co Ltd Method of manufacturing a light emitting unit
JP2010199547A (en) * 2009-01-30 2010-09-09 Nichia Corp Light emitting device and method of manufacturing same
US20110049545A1 (en) * 2009-09-02 2011-03-03 Koninklijke Philips Electronics N.V. Led package with phosphor plate and reflective substrate
CN102648426B (en) 2009-11-05 2015-07-15 鲁米尼特有限责任公司 Method to provide microstructure for encapsulated high-brightness LED chips
JP5678629B2 (en) 2010-02-09 2015-03-04 ソニー株式会社 Method for manufacturing light emitting device
KR101659357B1 (en) 2010-05-12 2016-09-23 엘지이노텍 주식회사 Light emitting device
WO2012099145A1 (en) 2011-01-20 2012-07-26 シャープ株式会社 Light emitting device, lighting device, display device, and method for manufacturing light emitting device
US20120327649A1 (en) * 2011-06-24 2012-12-27 Xicato, Inc. Led based illumination module with a lens element

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE34861E (en) 1987-10-26 1995-02-14 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
JPH1154802A (en) * 1997-07-30 1999-02-26 Matsushita Electric Ind Co Ltd Light-emitting diode and display unit manufactured using the same
JP2000223751A (en) * 1998-11-25 2000-08-11 Nichia Chem Ind Ltd Led lamp and display device using the led lamp
EP1418630A1 (en) * 2002-11-07 2004-05-12 Matsushita Electric Industrial Co., Ltd. LED lamp
EP1538680A2 (en) * 2003-12-03 2005-06-08 Sumitomo Electric Industries, Ltd. Light emitting device
EP1953834A1 (en) * 2005-11-21 2008-08-06 Matsushita Electric Works, Ltd. Light-emitting device
US7213940B1 (en) 2005-12-21 2007-05-08 Led Lighting Fixtures, Inc. Lighting device and lighting method
WO2007127029A2 (en) * 2006-04-24 2007-11-08 Cree, Inc. Side-view surface mount white led
US20100090233A1 (en) 2006-04-24 2010-04-15 Cree, Inc. Side-view surface mount white led
GB2458972A (en) * 2008-08-05 2009-10-07 Photonstar Led Ltd Thermally optimized chip-on-board module

Also Published As

Publication number Publication date
CN103180976B (en) 2016-05-04
CN103180976A (en) 2013-06-26
US20110042698A1 (en) 2011-02-24
TWI580076B (en) 2017-04-21
TW201216527A (en) 2012-04-16
US8748915B2 (en) 2014-06-10

Similar Documents

Publication Publication Date Title
US8748915B2 (en) Emitter package with angled or vertical LED
US11210971B2 (en) Light emitting diode display with tilted peak emission pattern
US9035328B2 (en) Light-emitting diode component
US9263636B2 (en) Light-emitting diode (LED) for achieving an asymmetric light output
JP6359802B2 (en) Semiconductor lighting parts
US20110037083A1 (en) Led package with contrasting face
US20080170396A1 (en) LED array and method for fabricating same
JP2011523511A (en) Light source that mixes light in the near field
US9786811B2 (en) Tilted emission LED array
US11094852B2 (en) Multiple LED light source lens design in an integrated package
US20200098957A1 (en) Multiple led light source lens design in an integrated package
US8350370B2 (en) Wide angle oval light emitting diode package
CN108321149B (en) Light emitting diode package and light emitting diode display
CN202120981U (en) Led display
CN202145462U (en) LED packaging

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180051188.7

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11767310

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11767310

Country of ref document: EP

Kind code of ref document: A1