WO2010025068A3 - Cobalt deposition on barrier surfaces - Google Patents

Cobalt deposition on barrier surfaces Download PDF

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Publication number
WO2010025068A3
WO2010025068A3 PCT/US2009/054307 US2009054307W WO2010025068A3 WO 2010025068 A3 WO2010025068 A3 WO 2010025068A3 US 2009054307 W US2009054307 W US 2009054307W WO 2010025068 A3 WO2010025068 A3 WO 2010025068A3
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WO
WIPO (PCT)
Prior art keywords
depositing
barrier layer
layer
cobalt
substrate
Prior art date
Application number
PCT/US2009/054307
Other languages
French (fr)
Other versions
WO2010025068A2 (en
Inventor
Jiang Lu
Hyoung-Chan Ha
Paul Ma
Seshadri Ganguli
Joseph F. Aubuchon
Sang Ho Yu
Murali Narasimhan
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2011525098A priority Critical patent/JP2012501543A/en
Priority to CN2009801341725A priority patent/CN102132383A/en
Publication of WO2010025068A2 publication Critical patent/WO2010025068A2/en
Publication of WO2010025068A3 publication Critical patent/WO2010025068A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating

Abstract

Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
PCT/US2009/054307 2008-08-29 2009-08-19 Cobalt deposition on barrier surfaces WO2010025068A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011525098A JP2012501543A (en) 2008-08-29 2009-08-19 Cobalt deposition on barrier surfaces
CN2009801341725A CN102132383A (en) 2008-08-29 2009-08-19 Cobalt deposition on barrier surfaces

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/201,976 US9051641B2 (en) 2001-07-25 2008-08-29 Cobalt deposition on barrier surfaces
US12/201,976 2008-08-29

Publications (2)

Publication Number Publication Date
WO2010025068A2 WO2010025068A2 (en) 2010-03-04
WO2010025068A3 true WO2010025068A3 (en) 2010-05-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/054307 WO2010025068A2 (en) 2008-08-29 2009-08-19 Cobalt deposition on barrier surfaces

Country Status (6)

Country Link
US (2) US9051641B2 (en)
JP (2) JP2012501543A (en)
KR (1) KR101599488B1 (en)
CN (2) CN106024598B (en)
TW (2) TWI654684B (en)
WO (1) WO2010025068A2 (en)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
TW200746268A (en) * 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
US8791018B2 (en) 2006-12-19 2014-07-29 Spansion Llc Method of depositing copper using physical vapor deposition
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
DE102009023381A1 (en) * 2009-05-29 2010-12-02 Grega, Samuel Manufacturing tungsten, chromium and molybdenum layers and their carbide, nitride and silicide, multi-layer structure and connection structure on solid substrate, comprises impacting substrate by tungsten, chromium and molybdenum carbonyl
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9653353B2 (en) 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
JPWO2011027834A1 (en) 2009-09-02 2013-02-04 株式会社アルバック Method for forming Co film and method for forming Cu wiring film
US10128261B2 (en) 2010-06-30 2018-11-13 Sandisk Technologies Llc Cobalt-containing conductive layers for control gate electrodes in a memory structure
JP5680892B2 (en) * 2010-07-13 2015-03-04 株式会社アルバック Co film forming method
US20120141667A1 (en) * 2010-07-16 2012-06-07 Applied Materials, Inc. Methods for forming barrier/seed layers for copper interconnect structures
US9926639B2 (en) 2010-07-16 2018-03-27 Applied Materials, Inc. Methods for forming barrier/seed layers for copper interconnect structures
KR101223724B1 (en) * 2010-10-25 2013-01-17 삼성디스플레이 주식회사 Passivation film for electronic device and method of manufacturing the same
JP2012174845A (en) * 2011-02-21 2012-09-10 Tokyo Electron Ltd Deposition method and semiconductor device manufacturing method
JP2012175073A (en) * 2011-02-24 2012-09-10 Tokyo Electron Ltd Deposition method and storage medium
JP5659041B2 (en) * 2011-02-24 2015-01-28 東京エレクトロン株式会社 Film formation method and storage medium
CN106884157B (en) 2011-03-04 2019-06-21 诺发系统公司 Mixed type ceramic showerhead
US8524600B2 (en) 2011-03-31 2013-09-03 Applied Materials, Inc. Post deposition treatments for CVD cobalt films
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9330939B2 (en) 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
US8736056B2 (en) * 2012-07-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Device for reducing contact resistance of a metal
KR102193925B1 (en) 2012-09-25 2020-12-22 엔테그리스, 아이엔씨. Cobalt precursors for low temperature ald or cvd of cobalt-based thin films
JP2014101564A (en) * 2012-11-21 2014-06-05 Ulvac Japan Ltd Formation method of cobalt film
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
JP6310653B2 (en) * 2013-07-08 2018-04-11 株式会社アルバック Method for forming Cu wiring structure
US9218980B2 (en) * 2013-09-13 2015-12-22 Applied Materials, Inc. Surface treatment to improve CCTBA based CVD co nucleation on dielectric substrate
JP6488284B2 (en) * 2013-09-27 2019-03-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ How to enable seamless cobalt gap filling
US9090964B2 (en) * 2013-12-19 2015-07-28 Intel Corporation Additives to improve the performance of a precursor source for cobalt deposition
US9425155B2 (en) * 2014-02-25 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer bonding process and structure
JP6268008B2 (en) * 2014-03-17 2018-01-24 東京エレクトロン株式会社 Manufacturing method of Cu wiring
US9496145B2 (en) 2014-03-19 2016-11-15 Applied Materials, Inc. Electrochemical plating methods
KR102398920B1 (en) * 2014-04-07 2022-05-17 엔테그리스, 아이엔씨. Cobalt cvd
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
JP2015224227A (en) * 2014-05-28 2015-12-14 宇部興産株式会社 Method of producing (acetylene)dicobalt hexacarbonyl compound
US9847289B2 (en) * 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9899234B2 (en) 2014-06-30 2018-02-20 Lam Research Corporation Liner and barrier applications for subtractive metal integration
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9487860B2 (en) 2014-11-10 2016-11-08 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method for forming cobalt containing films
US9984963B2 (en) * 2015-02-04 2018-05-29 Sandisk Technologies Llc Cobalt-containing conductive layers for control gate electrodes in a memory structure
US10741572B2 (en) 2015-02-04 2020-08-11 Sandisk Technologies Llc Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same
US9758896B2 (en) 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
US10563305B2 (en) * 2015-05-13 2020-02-18 Versum Materials Us, Llc Container for chemical precursors in a deposition process
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US9589897B1 (en) * 2015-08-18 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Trench liner for removing impurities in a non-copper trench
US9741577B2 (en) * 2015-12-02 2017-08-22 International Business Machines Corporation Metal reflow for middle of line contacts
US20170186944A1 (en) * 2015-12-29 2017-06-29 International Business Machines Corporation Enhancement of spin transfer torque magnetoresistive random access memory device using hydrogen plasma
US10011903B2 (en) 2015-12-31 2018-07-03 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Manganese-containing film forming compositions, their synthesis, and use in film deposition
US9738971B2 (en) 2015-12-31 2017-08-22 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition methods to form group 8-containing films
US9719167B2 (en) 2015-12-31 2017-08-01 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Cobalt-containing film forming compositions, their synthesis, and use in film deposition
US10438847B2 (en) 2016-05-13 2019-10-08 Lam Research Corporation Manganese barrier and adhesion layers for cobalt
US10793947B2 (en) * 2016-08-14 2020-10-06 Entegris, Inc. Alloys of Co to reduce stress
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
JP2018073949A (en) * 2016-10-27 2018-05-10 東京エレクトロン株式会社 Metal wiring layer formation method, metal wiring layer formation device, and storage medium
US20180135174A1 (en) * 2016-11-01 2018-05-17 Versum Materials Us, Llc Cobalt compounds, method of making and method of use thereof
US10600685B2 (en) * 2016-11-27 2020-03-24 Applied Materials, Inc. Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US10242879B2 (en) 2017-04-20 2019-03-26 Lam Research Corporation Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US11807939B2 (en) 2017-07-18 2023-11-07 Kojundo Chemical Laboratory Co., Ltd. Atomic layer deposition method for metal thin films
KR102405723B1 (en) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 High pressure and high temperature annealing chamber
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US10079177B1 (en) 2017-09-01 2018-09-18 United Microelectronics Corp. Method for forming copper material over substrate
US10304732B2 (en) * 2017-09-21 2019-05-28 Applied Materials, Inc. Methods and apparatus for filling substrate features with cobalt
SG11202003355QA (en) 2017-11-11 2020-05-28 Micromaterials Llc Gas delivery system for high pressure processing chamber
CN111432920A (en) 2017-11-17 2020-07-17 应用材料公司 Condenser system for high pressure processing system
WO2019173006A1 (en) 2018-03-09 2019-09-12 Applied Materials, Inc. High pressure annealing process for metal containing materials
CN111936664A (en) 2018-03-19 2020-11-13 应用材料公司 Method for depositing a coating on an aerospace component
US20190309422A1 (en) * 2018-04-06 2019-10-10 Versum Materials Us, Llc Spin-On Metallization
EP3784815A4 (en) 2018-04-27 2021-11-03 Applied Materials, Inc. Protection of components from corrosion
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US11024801B2 (en) * 2018-06-27 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Diffusion layer for magnetic tunnel junctions
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US20200048760A1 (en) * 2018-08-13 2020-02-13 Applied Materials, Inc. High power impulse magnetron sputtering physical vapor deposition of tungsten films having improved bottom coverage
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
US11124874B2 (en) 2018-10-25 2021-09-21 Applied Materials, Inc. Methods for depositing metallic iridium and iridium silicide
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
JP2022525635A (en) 2019-03-22 2022-05-18 アプライド マテリアルズ インコーポレイテッド Methods and equipment for depositing metal nitrides
WO2020197894A1 (en) 2019-03-22 2020-10-01 Applied Materials, Inc. Method and apparatus for deposition of multilayer device with superconductive film
KR20200124351A (en) 2019-04-23 2020-11-03 삼성전자주식회사 Cobalt precursor, method for manufacturing cobalt containing layer using the same, and method for manufacturing semiconductor device using the same
EP3959356A4 (en) 2019-04-26 2023-01-18 Applied Materials, Inc. Methods of protecting aerospace components against corrosion and oxidation
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
TWI780579B (en) 2020-02-03 2022-10-11 美商應用材料股份有限公司 Snspd with integrated aluminum nitride seed or waveguide layer
TWI753759B (en) 2020-02-03 2022-01-21 美商應用材料股份有限公司 Snspd with integrated aluminum nitride seed or waveguide layer
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
US20210407852A1 (en) * 2020-06-25 2021-12-30 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device including liner structure
EP4175772A1 (en) 2020-07-03 2023-05-10 Applied Materials, Inc. Methods for refurbishing aerospace components
US11742282B2 (en) * 2020-08-07 2023-08-29 Micron Technology, Inc. Conductive interconnects
CN112201618A (en) * 2020-09-30 2021-01-08 上海华力集成电路制造有限公司 Method for optimizing quality of cushion layer
US20220228257A1 (en) 2021-01-21 2022-07-21 Taiwan Semiconductor Manufacturing Company Limited Tungsten deposition on a cobalt surface
US20230134230A1 (en) * 2021-11-01 2023-05-04 Applied Materials, Inc. Methods and apparatus for tungsten gap fill

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040203233A1 (en) * 2003-04-08 2004-10-14 Sang-Bom Kang Compositions for depositing a metal layer and methods of forming a metal layer using the same
US7172967B2 (en) * 2003-09-22 2007-02-06 Samsung Electronics Co., Ltd. Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same
WO2007121249A2 (en) * 2006-04-11 2007-10-25 Applied Materials, Inc. Process for forming cobalt-containing materials

Family Cites Families (432)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI117944B (en) 1999-10-15 2007-04-30 Asm Int A method for growing transition metal nitride thin films
FI118158B (en) 1999-10-15 2007-07-31 Asm Int Process for modifying the starting chemical in an ALD process
SE393967B (en) 1974-11-29 1977-05-31 Sateko Oy PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE
FI57975C (en) 1979-02-28 1980-11-10 Lohja Ab Oy OVER ANCHORING VIDEO UPDATE FOR AVAILABILITY
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4415275A (en) 1981-12-21 1983-11-15 Dietrich David E Swirl mixing device
JPS5898917A (en) 1981-12-09 1983-06-13 Seiko Epson Corp Atomic layer epitaxial device
JPS5898917U (en) 1981-12-26 1983-07-05 株式会社フジ医療器 Arm stretcher attached to chair-type pine surgery machine
FI64878C (en) 1982-05-10 1984-01-10 Lohja Ab Oy KOMBINATIONSFILM FOER ISYNNERHET TUNNFILMELEKTROLUMINENSSTRUKTURER
US4500409A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Magnetron sputter coating source for both magnetic and non magnetic target materials
JPS6119883A (en) 1984-07-06 1986-01-28 Asahi Chem Ind Co Ltd Composite structure
US5294286A (en) * 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
GB2162207B (en) 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPS61174725A (en) 1985-01-30 1986-08-06 Toshiba Corp Thin film forming apparatus
JPH0547666Y2 (en) 1985-03-15 1993-12-15
JPS61174725U (en) 1985-04-22 1986-10-30
US5096364A (en) * 1986-04-28 1992-03-17 Varian Associates, Inc. Wafer arm handler mechanism
US4761269A (en) 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
JPH0639357B2 (en) 1986-09-08 1994-05-25 新技術開発事業団 Method for growing element semiconductor single crystal thin film
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
DE3721637A1 (en) 1987-06-30 1989-01-12 Aixtron Gmbh GAS INLET FOR A MULTIPLE DIFFERENT REACTION GAS IN REACTION VESSELS
JPS6428921A (en) 1987-07-24 1989-01-31 Tokuda Seisakusho Plasma treatment device
US4814294A (en) * 1987-07-30 1989-03-21 Allied-Signal Inc. Method of growing cobalt silicide films by chemical vapor deposition
JPS6428921U (en) 1987-08-12 1989-02-21
US4824544A (en) 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
DE3743938C2 (en) * 1987-12-23 1995-08-31 Cs Halbleiter Solartech Process for atomic layer epitaxy growth of a III / V compound semiconductor thin film
FR2628985B1 (en) 1988-03-22 1990-12-28 Labo Electronique Physique EPITAXY REACTOR WITH WALL PROTECTION
US5261959A (en) 1988-05-26 1993-11-16 General Electric Company Diamond crystal growth apparatus
JPH0824191B2 (en) 1989-03-17 1996-03-06 富士通株式会社 Thin film transistor
JP2895506B2 (en) 1989-05-12 1999-05-24 東京エレクトロン株式会社 Sputtering equipment
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5122923A (en) 1989-08-30 1992-06-16 Nec Corporation Thin-film capacitors and process for manufacturing the same
JPH03140487A (en) 1989-10-25 1991-06-14 Mitsubishi Electric Corp Electrochemical reactor
DE69129081T2 (en) 1990-01-29 1998-07-02 Varian Associates Device and method for precipitation by a collimator
JPH03240944A (en) 1990-02-17 1991-10-28 Masahiko Naoe Method and device for focusing target sputtering for forming thin aluminum film
US5320728A (en) 1990-03-30 1994-06-14 Applied Materials, Inc. Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity
US5242566A (en) 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5252807A (en) 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5483919A (en) * 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
US5286296A (en) * 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
US5178681A (en) 1991-01-29 1993-01-12 Applied Materials, Inc. Suspension system for semiconductor reactors
JP2680202B2 (en) 1991-03-20 1997-11-19 国際電気株式会社 Vapor phase growth method and apparatus
US5316793A (en) 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
US5173327A (en) 1991-06-18 1992-12-22 Micron Technology, Inc. LPCVD process for depositing titanium films for semiconductor devices
JPH05234899A (en) 1991-09-17 1993-09-10 Hitachi Ltd Atomic layer epitaxy apparatus
JPH05195213A (en) 1992-01-22 1993-08-03 Hitachi Ltd Sputtering device
JP3126787B2 (en) 1992-01-30 2001-01-22 理化学研究所 Film forming method and film forming apparatus
US5480818A (en) * 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
JP3103186B2 (en) 1992-03-19 2000-10-23 富士通株式会社 Atomic layer epitaxy apparatus and atomic layer epitaxy method
US5660744A (en) 1992-03-26 1997-08-26 Kabushiki Kaisha Toshiba Plasma generating apparatus and surface processing apparatus
JPH05311419A (en) 1992-04-01 1993-11-22 Nec Corp Magnetron type sputtering device
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
US5338362A (en) 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
US5607009A (en) 1993-01-28 1997-03-04 Applied Materials, Inc. Method of heating and cooling large area substrates and apparatus therefor
US5335138A (en) 1993-02-12 1994-08-02 Micron Semiconductor, Inc. High dielectric constant capacitor and method of manufacture
JP3265042B2 (en) 1993-03-18 2002-03-11 東京エレクトロン株式会社 Film formation method
US5443647A (en) 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
TW271490B (en) * 1993-05-05 1996-03-01 Varian Associates
US5526244A (en) 1993-05-24 1996-06-11 Bishop; Vernon R. Overhead luminaire
KR960005377Y1 (en) * 1993-06-24 1996-06-28 현대전자산업 주식회사 Sputtering apparatus for semiconductor device manufacture
US6171922B1 (en) * 1993-09-01 2001-01-09 National Semiconductor Corporation SiCr thin film resistors having improved temperature coefficients of resistance and sheet resistance
JPH07126844A (en) 1993-11-01 1995-05-16 Tatsuo Asamaki Sputtering device
KR100321536B1 (en) 1993-12-28 2002-06-20 히가시 데쓰로 Dipole ring magnet for magnetron sputtering or magnetron etching
US5666247A (en) 1994-02-04 1997-09-09 Seagate Technology, Inc. No-field, low power FeMn deposition giving high exchange films
KR970009828B1 (en) 1994-02-23 1997-06-18 Sansung Electronics Co Ltd Fabrication method of collimator
JPH07300649A (en) 1994-04-27 1995-11-14 Kobe Steel Ltd Hard film excellent in wear resistance and oxidation resistance and high hardness member
JP3181171B2 (en) * 1994-05-20 2001-07-03 シャープ株式会社 Vapor phase growth apparatus and vapor phase growth method
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
US5504041A (en) 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
JPH0860355A (en) * 1994-08-23 1996-03-05 Tel Varian Ltd Treating device
JP2655094B2 (en) 1994-08-30 1997-09-17 日本電気株式会社 Electron gun deposition equipment
US5616218A (en) 1994-09-12 1997-04-01 Matereials Research Corporation Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer
EP0703598A1 (en) 1994-09-26 1996-03-27 Applied Materials, Inc. Electrode between sputtering target and workpiece
US5945008A (en) 1994-09-29 1999-08-31 Sony Corporation Method and apparatus for plasma control
JP2671835B2 (en) 1994-10-20 1997-11-05 日本電気株式会社 Sputtering apparatus and method for manufacturing semiconductor device using the apparatus
FI100409B (en) 1994-11-28 1997-11-28 Asm Int Method and apparatus for making thin films
FI97731C (en) * 1994-11-28 1997-02-10 Mikrokemia Oy Method and apparatus for making thin films
FI97730C (en) * 1994-11-28 1997-02-10 Mikrokemia Oy Equipment for the production of thin films
US5527438A (en) 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield
JPH08186085A (en) 1994-12-28 1996-07-16 Nec Corp Manufacture of semiconductor device
US5663088A (en) 1995-05-19 1997-09-02 Micron Technology, Inc. Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer
US5632873A (en) 1995-05-22 1997-05-27 Stevens; Joseph J. Two piece anti-stick clamp ring
US5780361A (en) 1995-06-23 1998-07-14 Nec Corporation Salicide process for selectively forming a monocobalt disilicide film on a silicon region
WO1997001854A1 (en) 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
KR0167248B1 (en) 1995-07-24 1999-02-01 문정환 Heat treatment of substrate
US5589039A (en) 1995-07-28 1996-12-31 Sony Corporation In-plane parallel bias magnetic field generator for sputter coating magnetic materials onto substrates
US6238533B1 (en) 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5804488A (en) 1995-08-24 1998-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a tungsten silicide capacitor having a high breakdown voltage
US5650052A (en) 1995-10-04 1997-07-22 Edelstein; Sergio Variable cell size collimator
US6084302A (en) 1995-12-26 2000-07-04 Micron Technologies, Inc. Barrier layer cladding around copper interconnect lines
JPH09316643A (en) 1996-02-15 1997-12-09 Mitsubishi Materials Corp Sticking preventing parts for physical vapor deposition system
EP0793271A3 (en) 1996-02-22 1998-12-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a metal silicide film and method of fabricating the same
EP0799903A3 (en) 1996-04-05 1999-11-17 Applied Materials, Inc. Methods of sputtering a metal onto a substrate and semiconductor processing apparatus
US6313035B1 (en) * 1996-05-31 2001-11-06 Micron Technology, Inc. Chemical vapor deposition using organometallic precursors
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5736021A (en) 1996-07-10 1998-04-07 Applied Materials, Inc. Electrically floating shield in a plasma reactor
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US6014943A (en) * 1996-09-12 2000-01-18 Tokyo Electron Limited Plasma process device
US5835677A (en) 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US5923056A (en) 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US6071572A (en) 1996-10-15 2000-06-06 Applied Materials, Inc. Forming tin thin films using remote activated specie generation
US6224312B1 (en) 1996-11-18 2001-05-01 Applied Materials, Inc. Optimal trajectory robot motion
US5886864A (en) * 1996-12-02 1999-03-23 Applied Materials, Inc. Substrate support member for uniform heating of a substrate
US5807792A (en) 1996-12-18 1998-09-15 Siemens Aktiengesellschaft Uniform distribution of reactants in a device layer
JP4142753B2 (en) * 1996-12-26 2008-09-03 株式会社東芝 Sputtering target, sputtering apparatus, semiconductor device and manufacturing method thereof
US6335280B1 (en) * 1997-01-13 2002-01-01 Asm America, Inc. Tungsten silicide deposition process
US6221766B1 (en) 1997-01-24 2001-04-24 Steag Rtp Systems, Inc. Method and apparatus for processing refractory metals on semiconductor substrates
US20020019127A1 (en) * 1997-02-14 2002-02-14 Micron Technology, Inc. Interconnect structure and method of making
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
JPH10308283A (en) * 1997-03-04 1998-11-17 Denso Corp El element and its manufacture
US5936831A (en) 1997-03-06 1999-08-10 Lucent Technologies Inc. Thin film tantalum oxide capacitors and resulting product
US5902129A (en) 1997-04-07 1999-05-11 Lsi Logic Corporation Process for forming improved cobalt silicide layer on integrated circuit structure using two capping layers
US6692617B1 (en) * 1997-05-08 2004-02-17 Applied Materials, Inc. Sustained self-sputtering reactor having an increased density plasma
TW417249B (en) 1997-05-14 2001-01-01 Applied Materials Inc Reliability barrier integration for cu application
US6156382A (en) 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
FI972874A0 (en) 1997-07-04 1997-07-04 Mikrokemia Oy Foerfarande och anordning Foer framstaellning av tunnfilmer
US6073366A (en) 1997-07-11 2000-06-13 Asm America, Inc. Substrate cooling system and method
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (en) * 1999-12-08 2003-06-02 삼성전자주식회사 Method for forming a metal layer by an atomic layer deposition and a semiconductor device with the metal layer as a barrier metal layer, an upper electrode, or a lower electrode of capacitor
KR100269306B1 (en) 1997-07-31 2000-10-16 윤종용 Integrate circuit device having buffer layer containing metal oxide stabilized by low temperature treatment and fabricating method thereof
KR100261017B1 (en) 1997-08-19 2000-08-01 윤종용 Method for forming metal wiring of semiconductor device
US5913145A (en) * 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
US6197683B1 (en) * 1997-09-29 2001-03-06 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US6348376B2 (en) * 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
US6071055A (en) 1997-09-30 2000-06-06 Applied Materials, Inc. Front end vacuum processing environment
KR100274603B1 (en) 1997-10-01 2001-01-15 윤종용 Method and apparatus for fabricating semiconductor device
US6235634B1 (en) 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
JP3569133B2 (en) 1997-10-29 2004-09-22 Ｎｅｃエレクトロニクス株式会社 Method for manufacturing semiconductor device
US6861356B2 (en) 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
US6179983B1 (en) * 1997-11-13 2001-01-30 Novellus Systems, Inc. Method and apparatus for treating surface including virtual anode
US6007403A (en) 1997-11-17 1999-12-28 Urspringer; Steven E. Flexible constrictor for inflatable bodies
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
US6099904A (en) 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
FI104383B (en) 1997-12-09 2000-01-14 Fortum Oil & Gas Oy Procedure for coating the inside of a plant
KR100269328B1 (en) * 1997-12-31 2000-10-16 윤종용 Method for forming conductive layer using atomic layer deposition process
US6015917A (en) 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6074922A (en) 1998-03-13 2000-06-13 Taiwan Semiconductor Manufacturing Company Enhanced structure for salicide MOSFET
US6214731B1 (en) * 1998-03-25 2001-04-10 Advanced Micro Devices, Inc. Copper metalization with improved electromigration resistance
KR100267885B1 (en) * 1998-05-18 2000-11-01 서성기 Deposition apparatus
KR100282853B1 (en) 1998-05-18 2001-04-02 서성기 Apparatus for thin film deposition using cyclic gas injection
NL1009327C2 (en) 1998-06-05 1999-12-10 Asm Int Method and device for transferring wafers.
KR100319888B1 (en) 1998-06-16 2002-01-10 윤종용 Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same
KR100278657B1 (en) 1998-06-24 2001-02-01 윤종용 Metal line structure for semiconductor device & manufacturing method thereof
JP2000031387A (en) 1998-07-14 2000-01-28 Fuji Electric Co Ltd Manufacture of dielectric thin film capacitor
JP3375302B2 (en) * 1998-07-29 2003-02-10 東京エレクトロン株式会社 Magnetron plasma processing apparatus and processing method
US6592728B1 (en) 1998-08-04 2003-07-15 Veeco-Cvc, Inc. Dual collimated deposition apparatus and method of use
KR100275738B1 (en) 1998-08-07 2000-12-15 윤종용 Method for producing thin film using atomatic layer deposition
KR20000013654A (en) 1998-08-12 2000-03-06 윤종용 Capacitor having an al2o3/aln mixed dielectric layer by using an atomic layer deposition and a manufacturing method thereof
GB2340845B (en) 1998-08-19 2001-01-31 Kobe Steel Ltd Magnetron sputtering apparatus
KR20000022003A (en) 1998-09-10 2000-04-25 이경수 Method for forming three-components compound comprising metal and silicon
FI108375B (en) 1998-09-11 2002-01-15 Asm Microchemistry Oy Still for producing insulating oxide thin films
KR100287180B1 (en) * 1998-09-17 2001-04-16 윤종용 Method for manufacturing semiconductor device including metal interconnection formed using interface control layer
US6132575A (en) 1998-09-28 2000-10-17 Alcatel Magnetron reactor for providing a high density, inductively coupled plasma source for sputtering metal and dielectric films
US6251759B1 (en) 1998-10-03 2001-06-26 Applied Materials, Inc. Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system
KR100327328B1 (en) * 1998-10-13 2002-05-09 윤종용 Method for forming dielectric layer of capacitor having partially different thickness in the layer
KR100297719B1 (en) 1998-10-16 2001-08-07 윤종용 Method for manufacturing thin film
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
TW442891B (en) 1998-11-17 2001-06-23 Tokyo Electron Ltd Vacuum processing system
JP3580159B2 (en) 1998-12-18 2004-10-20 東京エレクトロン株式会社 Method of forming tungsten film
US6294836B1 (en) 1998-12-22 2001-09-25 Cvc Products Inc. Semiconductor chip interconnect barrier material and fabrication method
KR100331544B1 (en) 1999-01-18 2002-04-06 윤종용 Method for introducing gases into a reactor chamber and a shower head used therein
US6165807A (en) 1999-01-25 2000-12-26 Taiwan Smiconductor Manufacturing Company Method for forming junction leakage monitor for mosfets with silicide contacts
US6225176B1 (en) 1999-02-22 2001-05-01 Advanced Micro Devices, Inc. Step drain and source junction formation
US6540838B2 (en) 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6958174B1 (en) 1999-03-15 2005-10-25 Regents Of The University Of Colorado Solid material comprising a thin metal film on its surface and methods for producing the same
KR100273473B1 (en) 1999-04-06 2000-11-15 이경수 Method for forming a thin film
US6194315B1 (en) * 1999-04-16 2001-02-27 Micron Technology, Inc. Electrochemical cobalt silicide liner for metal contact fills and damascene processes
KR100347379B1 (en) 1999-05-01 2002-08-07 주식회사 피케이엘 Atomic layer deposition apparatus for depositing multi substrate
FI118342B (en) 1999-05-10 2007-10-15 Asm Int Apparatus for making thin films
US6218298B1 (en) 1999-05-19 2001-04-17 Infineon Technologies North America Corp. Tungsten-filled deep trenches
US6365511B1 (en) * 1999-06-03 2002-04-02 Agere Systems Guardian Corp. Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
JP4726369B2 (en) 1999-06-19 2011-07-20 エー・エス・エムジニテックコリア株式会社 Chemical vapor deposition reactor and thin film forming method using the same
US6524952B1 (en) * 1999-06-25 2003-02-25 Applied Materials, Inc. Method of forming a titanium silicide layer on a substrate
KR100319494B1 (en) 1999-07-15 2002-01-09 김용일 Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process
KR20010017820A (en) 1999-08-14 2001-03-05 윤종용 Semiconductor device and manufacturing method thereof
US6984415B2 (en) * 1999-08-20 2006-01-10 International Business Machines Corporation Delivery systems for gases for gases via the sublimation of solid precursors
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
JP4049978B2 (en) 1999-09-15 2008-02-20 三星電子株式会社 Metal wiring formation method using plating
JP2001095821A (en) 1999-09-30 2001-04-10 Lion Corp Interdental cleaning appliance
US6326297B1 (en) 1999-09-30 2001-12-04 Novellus Systems, Inc. Method of making a tungsten nitride barrier layer with improved adhesion and stability using a silicon layer
DE10049257B4 (en) 1999-10-06 2015-05-13 Samsung Electronics Co., Ltd. Process for thin film production by means of atomic layer deposition
US6398929B1 (en) 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
FI117942B (en) 1999-10-14 2007-04-30 Asm Int Process for making oxide thin films
JP5173098B2 (en) 1999-10-15 2013-03-27 エーエスエム インターナショナル エヌ．ヴェー． Conformal lining layer for damascene metallization
AU1088401A (en) 1999-10-15 2001-04-30 Asm Microchemistry Oy Deposition of transition metal carbides
US6902763B1 (en) 1999-10-15 2005-06-07 Asm International N.V. Method for depositing nanolaminate thin films on sensitive surfaces
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
KR100304714B1 (en) 1999-10-20 2001-11-02 윤종용 Method for fabricating metal layer of semiconductor device using metal-halide gas
KR100341849B1 (en) 1999-11-05 2002-06-26 박종섭 Method of forming a metal wiring in a semiconductor device
US6548112B1 (en) 1999-11-18 2003-04-15 Tokyo Electron Limited Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber
KR20010047128A (en) 1999-11-18 2001-06-15 이경수 Method of vaporizing a liquid source and apparatus used therefor
CA2390465A1 (en) * 1999-11-22 2001-05-31 Human Genome Sciences, Inc. Kunitz-type protease inhibitor polynucleotides, polypeptides, and antibodies
US6534404B1 (en) 1999-11-24 2003-03-18 Novellus Systems, Inc. Method of depositing diffusion barrier for copper interconnect in integrated circuit
US6780704B1 (en) 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
KR100330749B1 (en) 1999-12-17 2002-04-03 서성기 Thin film deposition apparatus for semiconductor
KR100705926B1 (en) * 1999-12-22 2007-04-11 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
KR100624903B1 (en) 1999-12-22 2006-09-19 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
FI118474B (en) 1999-12-28 2007-11-30 Asm Int Apparatus for making thin films
FI118343B (en) 1999-12-28 2007-10-15 Asm Int Apparatus for making thin films
US6495854B1 (en) 1999-12-30 2002-12-17 International Business Machines Corporation Quantum computing with d-wave superconductors
US6475854B2 (en) 1999-12-30 2002-11-05 Applied Materials, Inc. Method of forming metal electrodes
JP4817210B2 (en) 2000-01-06 2011-11-16 東京エレクトロン株式会社 Film forming apparatus and film forming method
FI20000099A0 (en) 2000-01-18 2000-01-18 Asm Microchemistry Ltd A method for growing thin metal films
JP4362919B2 (en) 2000-02-04 2009-11-11 株式会社デンソー Deposition method by atomic layer epitaxial growth method
KR100378871B1 (en) 2000-02-16 2003-04-07 주식회사 아펙스 showerhead apparatus for radical assisted deposition
CN1314225A (en) * 2000-02-18 2001-09-26 德克萨斯仪器股份有限公司 Structure and method for copper plating layer integrated circuit welding spot
US6627995B2 (en) 2000-03-03 2003-09-30 Cvc Products, Inc. Microelectronic interconnect material with adhesion promotion layer and fabrication method
AU2001245388A1 (en) 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
US6274484B1 (en) 2000-03-17 2001-08-14 Taiwan Semiconductor Manufacturing Company Fabrication process for low resistivity tungsten layer with good adhesion to insulator layers
FI117980B (en) 2000-04-14 2007-05-15 Asm Int A method of constructing a thin film on a substrate
TW496907B (en) 2000-04-14 2002-08-01 Asm Microchemistry Oy Method and apparatus of growing a thin film onto a substrate
FI117979B (en) 2000-04-14 2007-05-15 Asm Int Process for making oxide thin films
US7060132B2 (en) 2000-04-14 2006-06-13 Asm International N.V. Method and apparatus of growing a thin film
KR100363088B1 (en) 2000-04-20 2002-12-02 삼성전자 주식회사 Method of manufacturing barrier metal layer using atomic layer deposition method
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
FI118805B (en) 2000-05-15 2008-03-31 Asm Int A method and configuration for introducing a gas phase reactant into a reaction chamber
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
TW508658B (en) * 2000-05-15 2002-11-01 Asm Microchemistry Oy Process for producing integrated circuits
KR100427423B1 (en) * 2000-05-25 2004-04-13 가부시키가이샤 고베 세이코쇼 Inner tube for cvd apparatus
KR100647442B1 (en) 2000-06-07 2006-11-17 주성엔지니어링(주) Method of forming a thin film using atomic layer deposition
KR100403611B1 (en) 2000-06-07 2003-11-01 삼성전자주식회사 Metal-insulator-metal capacitor and manufacturing method thereof
US7253076B1 (en) * 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
EP2293322A1 (en) * 2000-06-08 2011-03-09 Genitech, Inc. Method for forming a metal nitride layer
KR100387255B1 (en) * 2000-06-20 2003-06-11 주식회사 하이닉스반도체 Method of forming a metal wiring in a semiconductor device
KR100332314B1 (en) * 2000-06-24 2002-04-12 서성기 Reactor for depositing thin film on wafer
KR100332313B1 (en) 2000-06-24 2002-04-12 서성기 Apparatus and method for depositing thin film on wafer
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6936538B2 (en) * 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US6592942B1 (en) 2000-07-07 2003-07-15 Asm International N.V. Method for vapour deposition of a film onto a substrate
US6585823B1 (en) 2000-07-07 2003-07-01 Asm International, N.V. Atomic layer deposition
FI20001694A0 (en) 2000-07-20 2000-07-20 Asm Microchemistry Oy A method for growing a thin film on a substrate
KR100444149B1 (en) * 2000-07-22 2004-08-09 주식회사 아이피에스 ALD thin film depositin equipment cleaning method
US6368954B1 (en) 2000-07-28 2002-04-09 Advanced Micro Devices, Inc. Method of copper interconnect formation using atomic layer copper deposition
KR100630666B1 (en) 2000-08-09 2006-10-02 삼성전자주식회사 Method of manufacturing semiconductor device including metal contact and capacitor
KR100396879B1 (en) * 2000-08-11 2003-09-02 삼성전자주식회사 Semiconductor memory device having capacitor encapsulated by multi-layer which includes double layeres being made of same material and method of manufacturing thereof
US6302965B1 (en) 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
US6903005B1 (en) 2000-08-30 2005-06-07 Micron Technology, Inc. Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics
US6444263B1 (en) 2000-09-15 2002-09-03 Cvc Products, Inc. Method of chemical-vapor deposition of a material
US6527855B2 (en) 2000-10-10 2003-03-04 Rensselaer Polytechnic Institute Atomic layer deposition of cobalt from cobalt metallorganic compounds
KR100436941B1 (en) 2000-11-07 2004-06-23 주성엔지니어링(주) apparatus and method for depositing thin film
US6355561B1 (en) 2000-11-21 2002-03-12 Micron Technology, Inc. ALD method to improve surface coverage
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
AU2002225761A1 (en) 2000-11-30 2002-06-11 Asm America, Inc. Thin films for magnetic devices
TW511135B (en) 2000-12-06 2002-11-21 Angstron Systems Inc Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
KR100385947B1 (en) 2000-12-06 2003-06-02 삼성전자주식회사 Method of forming thin film by atomic layer deposition
US20020197402A1 (en) 2000-12-06 2002-12-26 Chiang Tony P. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6428859B1 (en) 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
WO2002070142A1 (en) 2000-12-06 2002-09-12 Angstron Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US6416822B1 (en) 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20020104481A1 (en) 2000-12-06 2002-08-08 Chiang Tony P. System and method for modulated ion-induced atomic layer deposition (MII-ALD)
KR100386034B1 (en) 2000-12-06 2003-06-02 에이에스엠 마이크로케미스트리 리미티드 Method of Fabricating Semiconductor Device Employing Copper Interconnect Structure Having Diffusion Barrier Stuffed with Metal Oxide
US6949450B2 (en) 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US6878402B2 (en) 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US20020076507A1 (en) 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US6630201B2 (en) 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US20020073924A1 (en) 2000-12-15 2002-06-20 Chiang Tony P. Gas introduction system for a reactor
US20020076481A1 (en) 2000-12-15 2002-06-20 Chiang Tony P. Chamber pressure state-based control for a reactor
KR20020049875A (en) 2000-12-20 2002-06-26 윤종용 Ferroelectric capacitor in semiconductor memory device and method for manufacturing the same
JP3963078B2 (en) 2000-12-25 2007-08-22 株式会社高純度化学研究所 Tertiary amylimidotris (dimethylamido) tantalum, method for producing the same, raw material solution for MOCVD using the same, and method for forming a tantalum nitride film using the same
KR20020056260A (en) 2000-12-29 2002-07-10 박종섭 Method for forming metal gate of semiconductor devoie
US20020086111A1 (en) 2001-01-03 2002-07-04 Byun Jeong Soo Method of forming refractory metal nitride layers using chemisorption techniques
US6346477B1 (en) * 2001-01-09 2002-02-12 Research Foundation Of Suny - New York Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt
KR100434487B1 (en) 2001-01-17 2004-06-05 삼성전자주식회사 Shower head & film forming apparatus having the same
KR100400031B1 (en) 2001-01-17 2003-09-29 삼성전자주식회사 Contact plug of semiconductor device and method of forming the same
JP2002222934A (en) 2001-01-29 2002-08-09 Nec Corp Semiconductor device and manufacturing method thereof
US6844604B2 (en) 2001-02-02 2005-01-18 Samsung Electronics Co., Ltd. Dielectric layer for semiconductor device and method of manufacturing the same
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
KR100400033B1 (en) 2001-02-08 2003-09-29 삼성전자주식회사 Semiconductor device having multi-interconnection structure and manufacturing method thereof
KR100395766B1 (en) 2001-02-12 2003-08-25 삼성전자주식회사 Ferroelectric memory device and method of forming the same
KR101050377B1 (en) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 Improved process for deposition of semiconductor films
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US6326306B1 (en) * 2001-02-15 2001-12-04 United Microelectronics Corp. Method of forming copper dual damascene structure
US20020117399A1 (en) 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) * 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US20020121241A1 (en) 2001-03-02 2002-09-05 Nguyen Anh N. Processing chamber and method of distributing process fluids therein to facilitate sequential deposition of films
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
FI109770B (en) 2001-03-16 2002-10-15 Asm Microchemistry Oy Growing transition metal nitride thin films by using compound having hydrocarbon, amino or silyl group bound to nitrogen as nitrogen source material
US7348042B2 (en) 2001-03-19 2008-03-25 Novellus Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6812101B2 (en) 2001-04-02 2004-11-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacture thereof
US6369430B1 (en) 2001-04-02 2002-04-09 Motorola, Inc. Method of preventing two neighboring contacts from a short-circuit caused by a void between them and device having the same
US20020144655A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. Gas valve system for a reactor
US20020144657A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. ALD reactor employing electrostatic chuck
US6420189B1 (en) 2001-04-27 2002-07-16 Advanced Micro Devices, Inc. Superconducting damascene interconnected for integrated circuit
US6447933B1 (en) 2001-04-30 2002-09-10 Advanced Micro Devices, Inc. Formation of alloy material using alternating depositions of alloy doping element and bulk material
US6635965B1 (en) 2001-05-22 2003-10-21 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
KR100363332B1 (en) 2001-05-23 2002-12-05 Samsung Electronics Co Ltd Method for forming semiconductor device having gate all-around type transistor
US6828218B2 (en) * 2001-05-31 2004-12-07 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
US6849545B2 (en) 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
JP4680429B2 (en) * 2001-06-26 2011-05-11 Ｏｋｉセミコンダクタ株式会社 High speed reading control method in text-to-speech converter
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
WO2003029515A2 (en) * 2001-07-16 2003-04-10 Applied Materials, Inc. Formation of composite tungsten films
US20030198754A1 (en) 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
US20030017697A1 (en) * 2001-07-19 2003-01-23 Kyung-In Choi Methods of forming metal layers using metallic precursors
US7098131B2 (en) 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7105444B2 (en) 2001-07-19 2006-09-12 Samsung Electronics Co., Ltd. Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
US20030015421A1 (en) * 2001-07-20 2003-01-23 Applied Materials, Inc. Collimated sputtering of cobalt
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US20080268635A1 (en) 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
SG126681A1 (en) * 2001-07-25 2006-11-29 Inst Data Storage Oblique deposition apparatus
US20090004850A1 (en) * 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
WO2003030224A2 (en) 2001-07-25 2003-04-10 Applied Materials, Inc. Barrier formation using novel sputter-deposition method
US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US7138336B2 (en) 2001-08-06 2006-11-21 Asm Genitech Korea Ltd. Plasma enhanced atomic layer deposition (PEALD) equipment and method of forming a conducting thin film using the same thereof
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US6548906B2 (en) * 2001-08-22 2003-04-15 Agere Systems Inc. Method for reducing a metal seam in an interconnect structure and a device manufactured thereby
US6806145B2 (en) * 2001-08-31 2004-10-19 Asm International, N.V. Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
US20030042630A1 (en) * 2001-09-05 2003-03-06 Babcoke Jason E. Bubbler for gas delivery
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
WO2003025243A2 (en) 2001-09-14 2003-03-27 Asm International N.V. Metal nitride deposition by ald using gettering reactant
US20030049931A1 (en) * 2001-09-19 2003-03-13 Applied Materials, Inc. Formation of refractory metal nitrides using chemisorption techniques
KR20030025494A (en) 2001-09-21 2003-03-29 삼성전자주식회사 Semiconductor device having contact between ruthenium layer and metal layer and method for manufacturing the same
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US20030059538A1 (en) 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US20030057526A1 (en) 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
TW589684B (en) 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
TW512504B (en) 2001-10-12 2002-12-01 Advanced Semiconductor Eng Package substrate having protruded and recessed side edge
US20030072884A1 (en) 2001-10-15 2003-04-17 Applied Materials, Inc. Method of titanium and titanium nitride layer deposition
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
WO2003038145A2 (en) 2001-10-29 2003-05-08 Genus, Inc. Chemical vapor deposition system
JP4342131B2 (en) * 2001-10-30 2009-10-14 富士通マイクロエレクトロニクス株式会社 Capacitance element manufacturing method and semiconductor device manufacturing method
US6423619B1 (en) 2001-11-30 2002-07-23 Motorola, Inc. Transistor metal gate structure that minimizes non-planarity effects and method of formation
US6773507B2 (en) 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US6939801B2 (en) 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
US20030123216A1 (en) 2001-12-27 2003-07-03 Yoon Hyungsuk A. Deposition of tungsten for the formation of conformal tungsten silicide
US6674138B1 (en) 2001-12-31 2004-01-06 Advanced Micro Devices, Inc. Use of high-k dielectric materials in modified ONO structure for semiconductor devices
WO2003065424A2 (en) 2002-01-25 2003-08-07 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6824816B2 (en) 2002-01-29 2004-11-30 Asm International N.V. Process for producing metal thin films by ALD
US7063981B2 (en) 2002-01-30 2006-06-20 Asm International N.V. Active pulse monitoring in a chemical reactor
US6743340B2 (en) 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US6777352B2 (en) 2002-02-11 2004-08-17 Applied Materials, Inc. Variable flow deposition apparatus and method in semiconductor substrate processing
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6753618B2 (en) 2002-03-11 2004-06-22 Micron Technology, Inc. MIM capacitor with metal nitride electrode materials and method of formation
US20030216981A1 (en) 2002-03-12 2003-11-20 Michael Tillman Method and system for hosting centralized online point-of-sale activities for a plurality of distributed customers and vendors
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US20030194825A1 (en) 2002-04-10 2003-10-16 Kam Law Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
US6932871B2 (en) 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US20030235961A1 (en) 2002-04-17 2003-12-25 Applied Materials, Inc. Cyclical sequential deposition of multicomponent films
US6778762B1 (en) 2002-04-17 2004-08-17 Novellus Systems, Inc. Sloped chamber top for substrate processing
US20030203616A1 (en) 2002-04-24 2003-10-30 Applied Materials, Inc. Atomic layer deposition of tungsten barrier layers using tungsten carbonyls and boranes for copper metallization
US20030213560A1 (en) 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
US7164165B2 (en) 2002-05-16 2007-01-16 Micron Technology, Inc. MIS capacitor
KR100505043B1 (en) 2002-05-25 2005-07-29 삼성전자주식회사 Method for forming a capacitor
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
US7264846B2 (en) 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7404985B2 (en) 2002-06-04 2008-07-29 Applied Materials, Inc. Noble metal layer formation for copper film deposition
US7910165B2 (en) 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7041335B2 (en) 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US6743721B2 (en) 2002-06-10 2004-06-01 United Microelectronics Corp. Method and system for making cobalt silicide
US7005697B2 (en) * 2002-06-21 2006-02-28 Micron Technology, Inc. Method of forming a non-volatile electron storage memory and the resulting device
KR100476926B1 (en) * 2002-07-02 2005-03-17 삼성전자주식회사 Method for forming dual gate of semiconductor device
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
AU2003253873A1 (en) 2002-07-15 2004-02-02 Aviza Technology, Inc. Apparatus and method for backfilling a semiconductor wafer process chamber
US20040013803A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Formation of titanium nitride films using a cyclical deposition process
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7081409B2 (en) 2002-07-17 2006-07-25 Samsung Electronics Co., Ltd. Methods of producing integrated circuit devices utilizing tantalum amine derivatives
US6955211B2 (en) * 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7066194B2 (en) * 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
KR100468852B1 (en) * 2002-07-20 2005-01-29 삼성전자주식회사 Manufacturing method of Capacitor Structure
US6772072B2 (en) * 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US7300038B2 (en) * 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
KR100475084B1 (en) * 2002-08-02 2005-03-10 삼성전자주식회사 DRAM semiconductor device and fabrication method thereof
KR100542736B1 (en) * 2002-08-17 2006-01-11 삼성전자주식회사 Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same
US6958300B2 (en) 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
US6790773B1 (en) 2002-08-28 2004-09-14 Novellus Systems, Inc. Process for forming barrier/seed structures for integrated circuits
JP4188033B2 (en) 2002-08-30 2008-11-26 本田技研工業株式会社 Hydraulic shock absorber mounting structure
US6784096B2 (en) 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20040065255A1 (en) 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US20040069227A1 (en) 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US6936528B2 (en) 2002-10-17 2005-08-30 Samsung Electronics Co., Ltd. Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
JP2004140315A (en) 2002-10-17 2004-05-13 Samsung Electronics Co Ltd Manufacturing method for semiconductor device using salicide process
US6716287B1 (en) 2002-10-18 2004-04-06 Applied Materials Inc. Processing chamber with flow-restricting ring
JP3992588B2 (en) * 2002-10-23 2007-10-17 東京エレクトロン株式会社 Deposition method
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
WO2004064147A2 (en) 2003-01-07 2004-07-29 Applied Materials, Inc. Integration of ald/cvd barriers with porous low k materials
JP4401656B2 (en) * 2003-01-10 2010-01-20 パナソニック株式会社 Manufacturing method of semiconductor device
US6818094B2 (en) 2003-01-29 2004-11-16 Applied Materials, Inc. Reciprocating gas valve for pulsing a gas
US6994319B2 (en) 2003-01-29 2006-02-07 Applied Materials, Inc. Membrane gas valve for pulsing a gas
US6868859B2 (en) 2003-01-29 2005-03-22 Applied Materials, Inc. Rotary gas valve for pulsing a gas
US7442415B2 (en) 2003-04-11 2008-10-28 Sharp Laboratories Of America, Inc. Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films
US20040207093A1 (en) 2003-04-17 2004-10-21 Sey-Shing Sun Method of fabricating an alloy cap layer over CU wires to improve electromigration performance of CU interconnects
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US20050070126A1 (en) 2003-04-21 2005-03-31 Yoshihide Senzaki System and method for forming multi-component dielectric films
US6881437B2 (en) 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
US7211508B2 (en) * 2003-06-18 2007-05-01 Applied Materials, Inc. Atomic layer deposition of tantalum based barrier materials
KR100539274B1 (en) 2003-07-15 2005-12-27 삼성전자주식회사 Method for depositing cobalt layer
US20050085031A1 (en) 2003-10-15 2005-04-21 Applied Materials, Inc. Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
CN1890401A (en) * 2003-10-17 2007-01-03 应用材料公司 Selective self-initiating electroless capping of copper with cobalt-containing alloys
CN1314225C (en) 2003-10-24 2007-05-02 中兴通讯股份有限公司 System for realizing open telecommunication business based on XML file and thereof
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20050104142A1 (en) 2003-11-13 2005-05-19 Vijav Narayanan CVD tantalum compounds for FET get electrodes
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
KR100555541B1 (en) * 2003-12-23 2006-03-03 삼성전자주식회사 Forming method for cobalt silicide layer and manufacturing method for semiconductor device using the forming method
US20060033678A1 (en) * 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7064224B1 (en) * 2005-02-04 2006-06-20 Air Products And Chemicals, Inc. Organometallic complexes and their use as precursors to deposit metal films
US7265048B2 (en) 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
JP2007123853A (en) 2005-09-28 2007-05-17 Ebara Corp Layer forming method and device, base material processing device, wiring forming method, and wiring structure of substrate
US20070108063A1 (en) 2005-09-28 2007-05-17 Ebara Corporation Layer forming method, layer forming apparatus, workpiece processing apparatus, interconnect forming method, and substrate interconnect structure
JP5060037B2 (en) * 2005-10-07 2012-10-31 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
TWI329135B (en) 2005-11-04 2010-08-21 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US20070210448A1 (en) * 2006-03-10 2007-09-13 International Business Machines Corporation Electroless cobalt-containing liner for middle-of-the-line (mol) applications
KR101019875B1 (en) 2006-06-30 2011-03-04 어플라이드 머티어리얼스, 인코포레이티드 Nanocrystal formation
CN101159253A (en) 2007-10-31 2008-04-09 日月光半导体制造股份有限公司 Metallic layer structure under projection, crystal round structure and forming method of the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040203233A1 (en) * 2003-04-08 2004-10-14 Sang-Bom Kang Compositions for depositing a metal layer and methods of forming a metal layer using the same
US7172967B2 (en) * 2003-09-22 2007-02-06 Samsung Electronics Co., Ltd. Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same
WO2007121249A2 (en) * 2006-04-11 2007-10-25 Applied Materials, Inc. Process for forming cobalt-containing materials

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BOOYONG S. LIM ET AL.: "Atomic layer deposition of transition metals.", NATURE MATERIALS, vol. 2, November 2003 (2003-11-01), pages 749 - 754, Retrieved from the Internet <URL:http://www.nature.com/naturematerials> *

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