WO2009011956A3 - Hybrid magnetoelectronic transistor - Google Patents

Hybrid magnetoelectronic transistor Download PDF

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Publication number
WO2009011956A3
WO2009011956A3 PCT/US2008/062212 US2008062212W WO2009011956A3 WO 2009011956 A3 WO2009011956 A3 WO 2009011956A3 US 2008062212 W US2008062212 W US 2008062212W WO 2009011956 A3 WO2009011956 A3 WO 2009011956A3
Authority
WO
WIPO (PCT)
Prior art keywords
fet
ferromag
transistor
gate
magnetoelectronic
Prior art date
Application number
PCT/US2008/062212
Other languages
French (fr)
Other versions
WO2009011956A2 (en
Inventor
Jonathan P Bird
Jong-Uk Bae
Teng-Yin Lin
Original Assignee
Univ New York State Res Found
Jonathan P Bird
Jong-Uk Bae
Teng-Yin Lin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ New York State Res Found, Jonathan P Bird, Jong-Uk Bae, Teng-Yin Lin filed Critical Univ New York State Res Found
Publication of WO2009011956A2 publication Critical patent/WO2009011956A2/en
Publication of WO2009011956A3 publication Critical patent/WO2009011956A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo

Abstract

The present invention may be embodied as a device that is realized by forming the gate of a field-effect transistor (FET) from a ferromagnetic material, forming a so-called 'Ferromag-FET.' In addition to its usual electrostatic action, the gate of this device generates FMF that provide an additional means to modulate its conductance. The device may be based on a MOSFET, an HFET, a MESFET, a JFET, or any field-effect transistor. The Ferromag-FET can operate as a traditional transistor, which will allow an easier transition to the use of this new technology within existing products. Due to the nature of the ferromagnetic gate, the Ferromag-FET may also be utilized for non-volatile storage of data.
PCT/US2008/062212 2007-05-01 2008-05-01 Hybrid magnetoelectronic transistor WO2009011956A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92708007P 2007-05-01 2007-05-01
US60/927,080 2007-05-01

Publications (2)

Publication Number Publication Date
WO2009011956A2 WO2009011956A2 (en) 2009-01-22
WO2009011956A3 true WO2009011956A3 (en) 2009-08-13

Family

ID=40260285

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/062212 WO2009011956A2 (en) 2007-05-01 2008-05-01 Hybrid magnetoelectronic transistor

Country Status (1)

Country Link
WO (1) WO2009011956A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860006B2 (en) * 2010-03-26 2014-10-14 The Regents Of The University Of California Spin transistor having multiferroic gate dielectric
US9337334B2 (en) 2014-04-21 2016-05-10 Globalfoundries Inc. Semiconductor memory device employing a ferromagnetic gate
US9276040B1 (en) 2014-10-27 2016-03-01 Board Of Regents Of The University Of Nebraska Majority- and minority-gate logic schemes based on magneto-electric devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4831427A (en) * 1987-07-23 1989-05-16 Texas Instruments Incorporated Ferromagnetic gate memory
JP2004235568A (en) * 2003-01-31 2004-08-19 Japan Science & Technology Agency Field effect transistor
US20040238887A1 (en) * 2001-07-05 2004-12-02 Fumiyuki Nihey Field-effect transistor constituting channel by carbon nano tubes
WO2005104240A1 (en) * 2004-04-27 2005-11-03 Agency For Science, Technology And Research Magneto-electric field effect transistor for spintronic applications
WO2006015822A2 (en) * 2004-08-06 2006-02-16 Austriamicrosystems Ag High-voltage nmos-transistor and associated production method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4831427A (en) * 1987-07-23 1989-05-16 Texas Instruments Incorporated Ferromagnetic gate memory
US20040238887A1 (en) * 2001-07-05 2004-12-02 Fumiyuki Nihey Field-effect transistor constituting channel by carbon nano tubes
JP2004235568A (en) * 2003-01-31 2004-08-19 Japan Science & Technology Agency Field effect transistor
WO2005104240A1 (en) * 2004-04-27 2005-11-03 Agency For Science, Technology And Research Magneto-electric field effect transistor for spintronic applications
WO2006015822A2 (en) * 2004-08-06 2006-02-16 Austriamicrosystems Ag High-voltage nmos-transistor and associated production method

Also Published As

Publication number Publication date
WO2009011956A2 (en) 2009-01-22

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