WO2007125021A2 - Omr(organic-magnetoresistive) sensor and method for the production thereof - Google Patents

Omr(organic-magnetoresistive) sensor and method for the production thereof Download PDF

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Publication number
WO2007125021A2
WO2007125021A2 PCT/EP2007/053626 EP2007053626W WO2007125021A2 WO 2007125021 A2 WO2007125021 A2 WO 2007125021A2 EP 2007053626 W EP2007053626 W EP 2007053626W WO 2007125021 A2 WO2007125021 A2 WO 2007125021A2
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WIPO (PCT)
Prior art keywords
printing
layer
sensor
applying
coating
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PCT/EP2007/053626
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German (de)
French (fr)
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WO2007125021A3 (en
Inventor
Ralph Pätzold
Gotthard Rieger
Manfred Rührig
Wiebke Sarfert
Günter Schmid
Joachim Wecker
Roland Weiss
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Siemens Aktiengesellschaft
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Publication of WO2007125021A2 publication Critical patent/WO2007125021A2/en
Publication of WO2007125021A3 publication Critical patent/WO2007125021A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/16—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates the magnetic material being applied in the form of particles, e.g. by serigraphy, to form thick magnetic films or precursors therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/005—Thin magnetic films, e.g. of one-domain structure organic or organo-metallic films, e.g. monomolecular films obtained by Langmuir-Blodgett technique, graphene

Definitions

  • OMR organic-magnetoresistive
  • the invention relates to an OMR sensor and method for producing an organic magnetoresistive sensor.
  • the object of the invention is therefore to provide a cheap and therefore also suitable for disposable magnetoresistive sensor and a method for producing this sensor, so that new markets and applications in which this sensor can be used, are opened.
  • the invention relates to a sensor based on the magnetoresistive effect, which is available via mass production suitable coating techniques such as doctoring, printing, inkjet printing, embossing and / or screen printing.
  • the invention additionally relates to a process for producing a thin-film sensor on the basis of the magnetoresistive effect, nelle in which at least one non-structured func ⁇ layer over a simple coating methods such as spin-coating, spin-coating, spraying, and / or a possessi- ges method , the phase deposition on physical and / or chemical gas, coated and / or at least one structured functional layer over a massenfertigungstaug ⁇ pending method such as knife coating, embossing, printing, screen printing and / or inkjet printing is prepared.
  • the method of preparation includes e.g. large-area coating processes that allow subsequent structuring.
  • the layer can be applied over a large area and then structured by etching and / or lift-off processes. This includes materials that permit structuring by photocrosslinking, photolithography and / or photocrosslinking.
  • the OMR sensor can therefore comprise only unstructured layers as well as a combination of structured and unstructured layers and also only structured layers.
  • the method may accordingly comprise either both types of processes, structured application and unstructured application, alone or in combination.
  • a structuring technique in which initially unstructured is applied and structured later, of the concept of the invention includes.
  • the method can just as easily be applied to smaller units with a small number of units.
  • the method includes fully, the manufacturing method at least the following work steps ⁇ :
  • the method comprises one of the methods such as printing, embossing, doctoring, imprinting, screen printing, inkjet printing or others that are known from the literature on, for example, the production of bills, color images , etc. are known.
  • At least one process step of the method is carried out continuously, so that a layer is obtained, for example, on a belt- like carrier or a belt-like substrate. It is also possible that a process step for constructive ⁇ -structured application of the layer is carried out in a continuous process. For example, roll-to-roll (reel-to-reel) printing processes are suitable here.
  • polymeric layers are applied via the methods mentioned. They may be polymeric, oligomeric, monomeric and / or even non-crosslinked monomers are applied with or without solvent (mixtures) or other layers or ⁇ ganischem material by the process according to the invention and structured.
  • organic material is to be understood as meaning all types of organic, organometallic and / or inorganic plastics, with the exception of the classic semiconductor materials based on germanium, silicon, etc. It is also possible to fill filled plastics and hybrid use materials. Furthermore, the term “organic material” should also not be limited to carbonaceous material, but also materials such as silicones are possible. Furthermore, in addition to polymeric and oligomeric substances, so-called “small molecules” can also be used.
  • the functional semiconductor layer may consist of polythiophenes, polyalkylthiophene, poly-di-hexyl-ter-thiophene (PDHTT), polythienylenevinylenes, polyfluorene derivatives, or conjugated polymers to name a variety of possible substances.
  • PHTT poly-di-hexyl-ter-thiophene
  • PHTT poly-di-hexyl-ter-thiophene
  • polythienylenevinylenes polyfluorene derivatives
  • conjugated polymers conjugated polymers to name a variety of possible substances.
  • these materials may be of any doping, and not the whole layer must be doped, but examples game, only the adjoining one next layer Be ⁇ rich (interface) doped.
  • any polymers can be used as organic material blends of any polymers with any fillers, including conductive and / or magnetic fillers.
  • the fillers may be present in any fractions and vary in particle size and composition as desired.
  • polymers, polymer mixtures and / or plastics with e.g. used in the polymer bound, magnetic powder are examples of fillers, including conductive and / or magnetic fillers.
  • At least one of the functional layers of the sensor is doped on the basis of the magnetoresistive effect in order to be able to set the threshold voltage and / or the operating voltage in a targeted manner.
  • the sensor based on the magnetoresistive effect comprises at least three layers, two electrically conductive layers and one organic thin layer.
  • layer should not be construed narrowly as a separate layer, but rather a functionality is to be used, so that one of the conductive layers can be replaced by a doping of a middle layer, in which case counting the Layers in the thin-film component at the point only one layer can be counted, but in terms of functionality but are still contained in the layer two layers.
  • Each of the layers can be mixed with any desired dopants. It is intended to dislocations with dopants and dopants as described for example in Applied Physics Letters 88, 152107 (2006) and in Journal of Applied Physics Vol. 94, Number 1, page 359.
  • the organic thin film (s) may be either semiconductive, conductive or insulating. It is none of Beg ⁇ reefs strictly limited, but there are smooth transitions. Within an organic electronic component, however, the division is clear because, in conjunction with the other layers, it can be clearly formulated which of the layers of the organic electronic thin-film component has a semiconducting, conducting or insulating effect.
  • the invention relates to an OMR sensor and method for
  • the sensor can be produced by printing technology, and the method for the production comprises at least one application of an unstructured layer after a mass production-suitable process step.

Abstract

The invention relates to an OMR sensor and to a method for producing an organic magnetoresistive sensor. Said sensor can be produced by printing techniques. The method for the production thereof consists of at least applying an unstructured layer according to a process step suitable for mass production.

Description

Beschreibungdescription
OMR (organo-magneto-resisitver) -Sensor und Verfahren zur HerstellungOMR (organo-magnetoresistive) sensor and method of manufacture
Die Erfindung betrifft einen OMR-Sensor und Verfahren zur Herstellung eines organischen magnetoresistiven Sensors.The invention relates to an OMR sensor and method for producing an organic magnetoresistive sensor.
Bekannt sind AMR, GMR und TMR-Sensoren, beispielsweise aus der Veröffentlichung „Sandwiches mit riesigem Magnetwiderstand" von J. Wecker, R. Richter und R. Kinder erschienen in „Physik in unserer Zeit" 33. Jahrgang, 2002, Heft. Nr. 5, Seite 210.Are known AMR, GMR and TMR sensors, for example, from the publication "sandwiches with giant magnetoresistance" by J. Wecker, R. Richter and R. Kinder published in "Physics in our time" 33rd year, 2002, Issue. No. 5, page 210.
In der Datenspeicherung und Datenverarbeitung finden dieseIn data storage and data processing find these
Sensoren ein weites Anwendungsfeld, so dass ständig an einer Verbesserung der Herstellungsverfahren dieser Sensoren und der Sensoren an sich gearbeitet wird.Sensors a wide field of application, so that is constantly working to improve the manufacturing process of these sensors and the sensors themselves.
Bekannt ist die Herstellung der GMR und TMR-Sensoren in Dünnfilmtechnologie, ein sehr kostspieliges Verfahren, das viele empfindliche Arbeitsschritte umfasst.Known is the production of GMR and TMR sensors in thin-film technology, a very costly process involving many delicate operations.
Aufgabe der Erfindung ist es daher, einen billigen und daher auch für Einwegprodukte geeigneten magnetoresistiven Sensor und ein Verfahren zur Herstellung dieses Sensors zu schaffen, damit neue Märkte und Anwendungen, in denen dieser Sensor eingesetzt werden kann, eröffnet werden. The object of the invention is therefore to provide a cheap and therefore also suitable for disposable magnetoresistive sensor and a method for producing this sensor, so that new markets and applications in which this sensor can be used, are opened.
Gegenstand der Erfindung ist ein Sensor auf der Basis des magnetoresistiven Effekts, der über massenfertigungstaugliche Beschichtungstechniken wie Rakeln, Drucken, Inkjetdrucken, Prägeverfahren und/oder Siebdruck erhältlich ist. Außerdem ist Gegenstand der Erfindung ein Verfahren zur Herstellung eines Dünnschicht-Sensors auf der Basis des magnetoresistiven Effekts, bei dem zumindest eine nicht strukturierte funktio¬ nelle Schicht über ein einfaches Beschichtungsverfahren wie spin-coating, Aufschleudern, Aufsprühen und/oder ein sonsti- ges Verfahren, das über physikalische und/oder chemische Gas- phasenabscheidung, beschichtet und/oder zumindest eine strukturierte funktionelle Schicht über ein massenfertigungstaug¬ liches Verfahren wie Rakeln, Prägen, Drucken, Siebdrucken und/oder Inkjetprinting hergestellt wird.The invention relates to a sensor based on the magnetoresistive effect, which is available via mass production suitable coating techniques such as doctoring, printing, inkjet printing, embossing and / or screen printing. The invention additionally relates to a process for producing a thin-film sensor on the basis of the magnetoresistive effect, nelle in which at least one non-structured func ¬ layer over a simple coating methods such as spin-coating, spin-coating, spraying, and / or a sonsti- ges method , the phase deposition on physical and / or chemical gas, coated and / or at least one structured functional layer over a massenfertigungstaug ¬ pending method such as knife coating, embossing, printing, screen printing and / or inkjet printing is prepared.
Das Verfahren zur Herstellung umfasst z.B. großflächige Beschichtungsverfahren, die ein nachträgliches Strukturieren erlauben. Z.B. kann die Schicht großflächig aufgebracht werden und anschließend durch Ätz- und/oder Lift-Off-Prozesse strukturiert werden. Damit eingeschlossen sind Materialien, die ein strukturieren durch Photovernetzung, Photolithographie und/oder Photopassivierung erlauben.The method of preparation includes e.g. large-area coating processes that allow subsequent structuring. For example, The layer can be applied over a large area and then structured by etching and / or lift-off processes. This includes materials that permit structuring by photocrosslinking, photolithography and / or photocrosslinking.
Der OMR-Sensor kann demnach sowohl nur unstrukturierte Schichten als auch eine Kombination von strukturierten und unstrukturierten Schichten und auch nur strukturierte Schichten umfassen. Das Verfahren kann entsprechend entweder beide Arten von Prozessen, strukturiertes Aufbringen und unstrukturiertes Aufbringen, allein oder in Kombination umfassen. Au- ßerdem ist natürlich auch eine Strukturierungstechnik, bei der zunächst unstrukturiert aufgebracht wird und hinterher strukturiert wird, von dem Erfindungsgedanken mit umfasst.The OMR sensor can therefore comprise only unstructured layers as well as a combination of structured and unstructured layers and also only structured layers. The method may accordingly comprise either both types of processes, structured application and unstructured application, alone or in combination. In addition, of course, a structuring technique in which initially unstructured is applied and structured later, of the concept of the invention includes.
Ebenso gut kann das Verfahren auf kleinere Einheiten mit ge- ringer Stückzahl anwendbar sein. Nach einer vorteilhaften Aus führungs form des Verfahrens um- fasst das Herstellungsverfahren zumindest folgende Arbeits¬ schritte :The method can just as easily be applied to smaller units with a small number of units. According to an advantageous disclosed embodiment, the method includes fully, the manufacturing method at least the following work steps ¬:
- Aufbringen einer ersten leitfähigen Schicht auf eine Trägerschicht- Applying a first conductive layer on a carrier layer
- Aufbringen einer zweiten halbleitenden Schicht auf die untere leitfähige Schicht- Applying a second semiconductive layer on the lower conductive layer
- Aufbringen einer dritten leitfähigen Schicht auf die mittlere halbleitende Schicht.- Applying a third conductive layer on the middle semiconductive layer.
Nach einer vorteilhaften Aus führungs form umfasst das Verfahren beim Aufbringen zumindest einer strukturierten Schicht eine der Methoden wie Drucken, Prägen, Rakeln, Imprintverfah- ren, Siebdrucken, inkjet-Drucken oder andere, die aus der Li- teratur über beispielsweise Herstellung von Geldscheinen, Farbbildern, etc. bekannt sind.According to an advantageous embodiment, when applying at least one structured layer, the method comprises one of the methods such as printing, embossing, doctoring, imprinting, screen printing, inkjet printing or others that are known from the literature on, for example, the production of bills, color images , etc. are known.
Nach einer weiteren vorteilhaften Ausführungsform wird zumindest ein Prozessschritt des Verfahrens kontinuierlich durch- geführt, so dass eine Schicht beispielsweise auf einem band¬ artigen Träger oder einem bandartigen Substrat erhalten wird. Dabei ist es auch möglich, dass ein Prozessschritt zur struk¬ turierten Aufbringung der Schicht im kontinuierlichen Verfahren durchgeführt wird. Beispielsweise eignet sich hier Rolle- zu-Rolle (reel-to-reel) Druckverfahren.According to a further advantageous embodiment, at least one process step of the method is carried out continuously, so that a layer is obtained, for example, on a belt- like carrier or a belt-like substrate. It is also possible that a process step for constructive ¬-structured application of the layer is carried out in a continuous process. For example, roll-to-roll (reel-to-reel) printing processes are suitable here.
Es werden über die genannten Methoden beispielsweise polymer vorliegende Schichten aufgebracht. Es können polymere, oligo- mere, monomere und/oder noch unvernetzte Monomere mit oder ohne Lösungsmittel (gemische) oder sonstige Schichten aus or¬ ganischem Material nach dem Verfahren nach der Erfindung aufgebracht und strukturiert werden.For example, polymeric layers are applied via the methods mentioned. They may be polymeric, oligomeric, monomeric and / or even non-crosslinked monomers are applied with or without solvent (mixtures) or other layers or ¬ ganischem material by the process according to the invention and structured.
Unter dem Begriff "organisches Material" sollen alle Arten von organischen, metallorganischen und/oder anorganischen Kunststoffen unter Ausnahme der klassischen auf Germanium, Silizium usw. basierenden Halbleitermaterialien verstanden werden. Es ist auch möglich, gefüllte Kunststoffe und Hybrid- materialien einzusetzen. Ferner soll der Begriff "organisches Material" ebenfalls nicht auf kohlenstoffhaltiges Material beschränkt sein, vielmehr sind auch Materialien wie Silicone möglich. Weiterhin sind neben polymeren und oligomeren Sub- stanzen auch so genannte "small molecules" verwendbar.The term "organic material" is to be understood as meaning all types of organic, organometallic and / or inorganic plastics, with the exception of the classic semiconductor materials based on germanium, silicon, etc. It is also possible to fill filled plastics and hybrid use materials. Furthermore, the term "organic material" should also not be limited to carbonaceous material, but also materials such as silicones are possible. Furthermore, in addition to polymeric and oligomeric substances, so-called "small molecules" can also be used.
So kann die funktionelle Halbleiterschicht beispielsweise aus Polythiophenen, Polyalkylthiophen, Poly-Di-Hexyl-Ter-Thiophen (PDHTT) , Polythienylenvinylenen, Polyfluoren-Derivaten oder konjugierten Polymeren bestehen, um eine Auswahl an möglichen Substanzen zu benennen.For example, the functional semiconductor layer may consist of polythiophenes, polyalkylthiophene, poly-di-hexyl-ter-thiophene (PDHTT), polythienylenevinylenes, polyfluorene derivatives, or conjugated polymers to name a variety of possible substances.
Diese Materialien können beliebige Dotierungen haben, wobei auch nicht die ganze Schicht dotiert sein muss, sondern bei- spielsweise nur der an eine nächste Schicht angrenzende Be¬ reich (Interface) dotiert sein kann.May be, these materials may be of any doping, and not the whole layer must be doped, but examples game, only the adjoining one next layer Be ¬ rich (interface) doped.
Es können als organisches Material blends beliebiger Polymere mit beliebigen Füllstoffen, auch leitfähigen und/oder magne- tischen Füllstoffen eingesetzt werden. Auch die Füllstoffe können in beliebigen Fraktionen vorliegen und in Korngöße und Zusammensetzung beliebig variieren. Daneben oder ergänzend können auch Polymere, Polymergemische und/oder Kunststoffe mit z.B. im Polymer gebundenem, Magnetpulver eingesetzt wer- den.It can be used as organic material blends of any polymers with any fillers, including conductive and / or magnetic fillers. The fillers may be present in any fractions and vary in particle size and composition as desired. In addition or in addition, polymers, polymer mixtures and / or plastics with e.g. used in the polymer bound, magnetic powder.
Nach einer weiteren Ausführungsform wird zumindest eine der funktionellen Schichten des Sensors auf der Basis des magne- toresistiven Effekts dotiert, um die Einsatzspannung und/oder die Betriebsspannung gezielt einstellen zu können.According to a further embodiment, at least one of the functional layers of the sensor is doped on the basis of the magnetoresistive effect in order to be able to set the threshold voltage and / or the operating voltage in a targeted manner.
Der Sensor auf Basis des magnetoresistiven Effekts umfasst zumindest drei Schichten, zwei elektrisch leitfähige und eine organische Dünnschicht. Dabei ist der Begriff „Schicht" nicht eng als gesonderte Schicht auszulegen, sondern es wird auf eine Funktionalität abgestellt. So kann durchaus eine der leitfähigen Schichten durch eine Dotierung einer mittleren Schicht ersetzbar sein, wobei dann bei der Zählung der Schichten im Dünnschichtbauteil an der Stelle nur eine Schicht gezählt werden kann, von der Funktionalität her aber sind in der Schicht doch zwei Schichten enthalten.The sensor based on the magnetoresistive effect comprises at least three layers, two electrically conductive layers and one organic thin layer. The term "layer" should not be construed narrowly as a separate layer, but rather a functionality is to be used, so that one of the conductive layers can be replaced by a doping of a middle layer, in which case counting the Layers in the thin-film component at the point only one layer can be counted, but in terms of functionality but are still contained in the layer two layers.
Jede der Schicht kann mit beliebigen Dopanden versetzt sein. Gedacht ist an Versetzungen mit Dopanden und Dotierungen wie sie beispielsweise in Applied Physics Letters 88, 152107 (2006) und in Journal of Applied Physics Vol. 94, Number 1, Seite 359 beschrieben sind.Each of the layers can be mixed with any desired dopants. It is intended to dislocations with dopants and dopants as described for example in Applied Physics Letters 88, 152107 (2006) and in Journal of Applied Physics Vol. 94, Number 1, page 359.
Die organische (n) Dünnschicht (en) können entweder halbleitend, leitend oder isolierend sein. Dabei ist keiner der Beg¬ riffe streng begrenzt, sondern es gibt fließende Übergänge. Innerhalb eines organischen elektronischen Bauteils ist die Aufteilung jedoch klar, weil im Zusammenhang mit den übrigen Schichten eindeutig formuliert werden kann, welche der Schichten des organischen elektronischen Dünnschichtbauteils als halbleitend, leitend oder isolierend wirkt .The organic thin film (s) may be either semiconductive, conductive or insulating. It is none of Beg ¬ reefs strictly limited, but there are smooth transitions. Within an organic electronic component, however, the division is clear because, in conjunction with the other layers, it can be clearly formulated which of the layers of the organic electronic thin-film component has a semiconducting, conducting or insulating effect.
Die Herstellung eines MR Sensors auf Basis einer kostengüns¬ tigen und daher massenfertigungstauglichen Drucktechnologie verspricht einen starken Preisvorteil gegenüber bekannten auf klassischen Halbleitern basierenden Technologien.The preparation of an MR sensor based on a current kostengüns ¬ and therefore suitable for mass production printing technology promises a significant price advantage over known based on classic semiconductors technologies.
Die Erfindung betrifft einen OMR-Sensor und Verfahren zurThe invention relates to an OMR sensor and method for
Herstellung eines organischen magnetoresistiven Sensors. Der Sensor ist drucktechnisch herstellbar und das Verfahren zur Herstellung umfasst zumindest ein Aufbringen einer unstrukturierten Schicht nach einem massenfertigungstauglichen Pro- zessschritt. Production of an organic magnetoresistive sensor. The sensor can be produced by printing technology, and the method for the production comprises at least one application of an unstructured layer after a mass production-suitable process step.

Claims

Patentansprüche claims
1. Sensor auf der Basis des magnetoresistiven Effekts, der über massenfertigungstaugliche Beschichtungstechniken wie Ra- kein, Drucken, Inkjetdrucken, Prägeverfahren und/oder Siebdruck erhältlich ist.1. Sensor based on the magnetoresistive effect, which is available via mass production suitable coating techniques, such as printing, printing, inkjet printing, embossing and / or screen printing.
2. Sensor nach Anspruch 1, der zumindest drei Schichten um- fasst .2. Sensor according to claim 1, which comprises at least three layers.
3. Verfahren zur Herstellung eines Dünnschicht-Sensors auf der Basis des magnetoresistiven Effekts, bei dem zumindest eine nicht strukturierte funktionelle Schicht über ein einfa¬ ches Beschichtungsverfahren wie spin-coating, Aufschleudern, Aufsprühen und/oder ein sonstiges Verfahren, das über physikalische und/oder chemische Gasphasenabscheidung, beschichtet und/oder zumindest eine strukturierte funktionelle Schicht über ein massenfertigungstaugliches Verfahren wie Rakeln, Prägen, Drucken, Siebdrucken und/oder Ink jetprinting herge- stellt wird.3. The method for manufacturing a thin film sensor on the basis of the magnetoresistive effect in which at least one non-structured functional layer over a simp ¬ ches coating methods such as spin-coating, spin-coating, spraying, and / or any other method which physical and / or chemical vapor deposition, coated and / or at least one structured functional layer via a mass production process such as doctoring, embossing, printing, screen printing and / or ink jetprinting is produced.
4. Verfahren nach Anspruch 3, das zumindest folgende Arbeits¬ schritte umfasst:4. The method of claim 3 comprising at least the following working ¬ steps of:
Aufbringen einer ersten leitfähigen Schicht auf eine TrägerschichtApplying a first conductive layer to a carrier layer
Aufbringen einer zweiten halbleitenden Schicht auf die untere leitfähige SchichtApplying a second semiconductive layer to the lower conductive layer
Aufbringen einer dritten leitfähigen Schicht auf die mittlere halbleitende Schicht.Applying a third conductive layer to the middle semiconductive layer.
5. Verfahren nach Anspruch 3 oder 4, das beim Aufbringen zumindest einer strukturierten Schicht eine der Methoden ausgewählt aus der Gruppe folgende Techniken umfassend: Drucken, Prägen, Rakeln, Imprintverfahren, Siebdrucken, inkjet-Drucken benutzt. A method according to claim 3 or 4, which comprises, when applying at least one patterned layer, one of the methods selected from the group comprising the following techniques: printing, embossing, doctoring, imprinting, screen printing, inkjet printing.
6. Verfahren nach einem der Ansprüche 3 bis 5, wobei zumindest ein Prozessschritt des Verfahrens kontinuierlich durch¬ geführt wird.6. The method according to any one of claims 3 to 5, wherein at least one process step of the method is carried out continuously ¬ .
7. Verfahren nach einem der Ansprüche 3 bis 6, wobei zumindest eine der aufgebrachten Schichten des Dünnschicht Sensors auf Basis des magnetoresistiven Effekts dotiert und/oder mit einem Dopand versetzt wird. 7. The method according to any one of claims 3 to 6, wherein at least one of the deposited layers of the thin-film sensor is doped based on the magnetoresistive effect and / or mixed with a dopant.
PCT/EP2007/053626 2006-04-26 2007-04-13 Omr(organic-magnetoresistive) sensor and method for the production thereof WO2007125021A2 (en)

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DE200610019484 DE102006019484A1 (en) 2006-04-26 2006-04-26 Sensor e.g. organic magneto-resistive sensor, has conductive layer on carrier layer and semiconducting layer provided on lower part of conductive layer, where semiconducting layer is formed from polymer
DE102006019484.5 2006-04-26

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