WO2007076195A3 - Small volume symmetric flow single wafer ald apparatus - Google Patents

Small volume symmetric flow single wafer ald apparatus Download PDF

Info

Publication number
WO2007076195A3
WO2007076195A3 PCT/US2006/061201 US2006061201W WO2007076195A3 WO 2007076195 A3 WO2007076195 A3 WO 2007076195A3 US 2006061201 W US2006061201 W US 2006061201W WO 2007076195 A3 WO2007076195 A3 WO 2007076195A3
Authority
WO
WIPO (PCT)
Prior art keywords
reactor
ring
susceptor
small volume
single wafer
Prior art date
Application number
PCT/US2006/061201
Other languages
French (fr)
Other versions
WO2007076195A2 (en
Inventor
Jeremie J Dalton
Martin Daulesberg
Kenneth Doering
M Ziaul Karim
Thomas E Seidel
Gerhard K Strauch
Original Assignee
Genus Inc
Jeremie J Dalton
Martin Daulesberg
Kenneth Doering
M Ziaul Karim
Thomas E Seidel
Gerhard K Strauch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genus Inc, Jeremie J Dalton, Martin Daulesberg, Kenneth Doering, M Ziaul Karim, Thomas E Seidel, Gerhard K Strauch filed Critical Genus Inc
Priority to JP2008542517A priority Critical patent/JP2009529223A/en
Priority to KR1020087014036A priority patent/KR101505497B1/en
Priority to EP06848792A priority patent/EP1957688A2/en
Publication of WO2007076195A2 publication Critical patent/WO2007076195A2/en
Publication of WO2007076195A3 publication Critical patent/WO2007076195A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Abstract

An ALD reactor chamber contains a vertically moveable heater-susceptor having an attached annular attached flow ring conduit at its perimeter, which conduit has an external surface at its edge that isolates the outer space of the reactor above a wafer and below the wafer to the bottom of the flow ring when the heater-susceptor is in its process position. When the susceptor is in the process position, the outer edge of the flow ring is placed in proximity to an annular ring attached to a Hd of the reactor and together the ring and conduit form a tongue-in-groove (TIG) configuration. In some cases, the TIG design may have a staircase contour (SC), thereby limiting diffusion-backflow of downstream gases to the outer space of the reactor.
PCT/US2006/061201 2005-11-22 2006-11-22 Small volume symmetric flow single wafer ald apparatus WO2007076195A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008542517A JP2009529223A (en) 2005-11-22 2006-11-22 Small volume symmetrical flow single wafer ALD system
KR1020087014036A KR101505497B1 (en) 2005-11-22 2006-11-22 Small volume symmetric flow single wafer ald apparatus
EP06848792A EP1957688A2 (en) 2005-11-22 2006-11-22 Small volume symmetric flow single wafer ald apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102005056326.6 2005-11-22
DE102005056326 2005-11-22
US82004206P 2006-07-21 2006-07-21
US60/820,042 2006-07-21

Publications (2)

Publication Number Publication Date
WO2007076195A2 WO2007076195A2 (en) 2007-07-05
WO2007076195A3 true WO2007076195A3 (en) 2008-01-24

Family

ID=38218748

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/061201 WO2007076195A2 (en) 2005-11-22 2006-11-22 Small volume symmetric flow single wafer ald apparatus

Country Status (4)

Country Link
EP (1) EP1957688A2 (en)
JP (1) JP2009529223A (en)
KR (1) KR101505497B1 (en)
WO (1) WO2007076195A2 (en)

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