WO2006091316A3 - Improved rinsing step in supercritical processing - Google Patents
Improved rinsing step in supercritical processing Download PDFInfo
- Publication number
- WO2006091316A3 WO2006091316A3 PCT/US2006/002655 US2006002655W WO2006091316A3 WO 2006091316 A3 WO2006091316 A3 WO 2006091316A3 US 2006002655 W US2006002655 W US 2006002655W WO 2006091316 A3 WO2006091316 A3 WO 2006091316A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pressure
- processing chamber
- rinsing step
- supercritical processing
- rinsing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
Abstract
An apparatus for removing a residue from a surface of an object located on a support region within a processing chamber is disclosed. The apparatus comprises means for performing a dual-pressure rinsing process and means for performing a series of decompression cycles. The means for performing a dual-pressure rinsing process comprises: means for pressurizing the processing chamber to a first pressure; means for introducing a rinsing chemistry into the processing chamber; means for recirculating the rinsing chemistry within the processing chamber for a first period of time; means for increasing a pressure of the processing chamber to a second pressure; and means for recirculating the rinsing chemistry within the processing.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/065,376 | 2005-02-23 | ||
US11/065,377 | 2005-02-23 | ||
US11/065,636 | 2005-02-23 | ||
US11/065,377 US20060185693A1 (en) | 2005-02-23 | 2005-02-23 | Cleaning step in supercritical processing |
US11/065,376 US20060186088A1 (en) | 2005-02-23 | 2005-02-23 | Etching and cleaning BPSG material using supercritical processing |
US11/065,636 US20060185694A1 (en) | 2005-02-23 | 2005-02-23 | Rinsing step in supercritical processing |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006091316A2 WO2006091316A2 (en) | 2006-08-31 |
WO2006091316A3 true WO2006091316A3 (en) | 2007-03-22 |
Family
ID=36927880
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/002655 WO2006091316A2 (en) | 2005-02-23 | 2006-01-24 | Improved rinsing step in supercritical processing |
PCT/US2006/002632 WO2006091312A2 (en) | 2005-02-23 | 2006-01-24 | Improved cleaning step in supercritical processing |
PCT/US2006/006768 WO2006091909A2 (en) | 2005-02-23 | 2006-02-22 | Etching and cleaning bpsg material using supercritical processing |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/002632 WO2006091312A2 (en) | 2005-02-23 | 2006-01-24 | Improved cleaning step in supercritical processing |
PCT/US2006/006768 WO2006091909A2 (en) | 2005-02-23 | 2006-02-22 | Etching and cleaning bpsg material using supercritical processing |
Country Status (1)
Country | Link |
---|---|
WO (3) | WO2006091316A2 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020014257A1 (en) * | 1999-08-05 | 2002-02-07 | Mohan Chandra | Supercritical fluid cleaning process for precision surfaces |
US6509141B2 (en) * | 1997-05-27 | 2003-01-21 | Tokyo Electron Limited | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
US6558475B1 (en) * | 2000-04-10 | 2003-05-06 | International Business Machines Corporation | Process for cleaning a workpiece using supercritical carbon dioxide |
US20040103922A1 (en) * | 2001-12-03 | 2004-06-03 | Yoichi Inoue | Method of high pressure treatment |
US20040211440A1 (en) * | 2003-04-24 | 2004-10-28 | Ching-Ya Wang | System and method for dampening high pressure impact on porous materials |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6612317B2 (en) * | 2000-04-18 | 2003-09-02 | S.C. Fluids, Inc | Supercritical fluid delivery and recovery system for semiconductor wafer processing |
US20040003831A1 (en) * | 2000-04-18 | 2004-01-08 | Mount David J. | Supercritical fluid cleaning process for precision surfaces |
US6669785B2 (en) * | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
US20040050406A1 (en) * | 2002-07-17 | 2004-03-18 | Akshey Sehgal | Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical |
US20040177867A1 (en) * | 2002-12-16 | 2004-09-16 | Supercritical Systems, Inc. | Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal |
US6857437B2 (en) * | 2003-06-18 | 2005-02-22 | Ekc Technology, Inc. | Automated dense phase fluid cleaning system |
-
2006
- 2006-01-24 WO PCT/US2006/002655 patent/WO2006091316A2/en active Application Filing
- 2006-01-24 WO PCT/US2006/002632 patent/WO2006091312A2/en active Application Filing
- 2006-02-22 WO PCT/US2006/006768 patent/WO2006091909A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6509141B2 (en) * | 1997-05-27 | 2003-01-21 | Tokyo Electron Limited | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
US20020014257A1 (en) * | 1999-08-05 | 2002-02-07 | Mohan Chandra | Supercritical fluid cleaning process for precision surfaces |
US6558475B1 (en) * | 2000-04-10 | 2003-05-06 | International Business Machines Corporation | Process for cleaning a workpiece using supercritical carbon dioxide |
US20040103922A1 (en) * | 2001-12-03 | 2004-06-03 | Yoichi Inoue | Method of high pressure treatment |
US20040211440A1 (en) * | 2003-04-24 | 2004-10-28 | Ching-Ya Wang | System and method for dampening high pressure impact on porous materials |
Also Published As
Publication number | Publication date |
---|---|
WO2006091312A3 (en) | 2007-03-01 |
WO2006091312A2 (en) | 2006-08-31 |
WO2006091316A2 (en) | 2006-08-31 |
WO2006091909A3 (en) | 2007-07-19 |
WO2006091909A2 (en) | 2006-08-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200636807A (en) | Cleaning step in supercritical processing | |
SG142270A1 (en) | Integrated method for removal of halogen residues from etched substrates by thermal process | |
WO2008105255A1 (en) | Method of cleaning plasma-treating apparatus, plasma-treating apparatus where the cleaning method is practiced, and memory medium memorizing program executing the cleaning method | |
TW200744763A (en) | A process for producing cleaning water containing dissolved gas, an apparatus for the process and an apparatus for cleaning | |
WO2005081289A3 (en) | Process and apparatus for removing residues from semiconductor substrates | |
TW200710981A (en) | Method for removing material from semiconductor wafer and apparatus for performing the same | |
TW200710205A (en) | Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers | |
TW200507027A (en) | Automated dense phase fluid cleaning system | |
EP2246129A3 (en) | Cleaning assembly | |
WO2008146834A1 (en) | Resist removing method, semiconductor manufacturing method, and resist removing apparatus | |
MY148396A (en) | Aqueous solution for removing post-etch residue | |
TW200636838A (en) | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid | |
TW200501254A (en) | Method for removing silicon oxide film and processing apparatus | |
TW200731339A (en) | Method for producing semiconductor device and substrate processing device | |
WO2011077344A3 (en) | Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing | |
WO2009115964A3 (en) | Hair removal system and method | |
ATE484963T1 (en) | METHOD AND DEVICE FOR PRODUCING FRUIT OR VEGETABLE JUICE | |
TW200713444A (en) | Technique for efficiently patterning an underbump metallization layer using a dry etch process | |
TWI366077B (en) | Apparatus for and method of processing substrate subjected to exposure process | |
WO2009065449A3 (en) | Method and apparatus for cleaning a large-size high-temperature part | |
TWI370973B (en) | On-wafer method and apparatus for pre-processing measurements of process and environment-dependent circuit performance variables for statistical analysis | |
WO2009137826A3 (en) | Mass/volume estimation contamination, removal and/or in situ treatment using subsurface pressure waves | |
TW200710970A (en) | Rinsing step in supercritical processing | |
WO2005033376A3 (en) | Plating method and apparatus | |
WO2006091316A3 (en) | Improved rinsing step in supercritical processing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 06719496 Country of ref document: EP Kind code of ref document: A2 |